BQ25570RGRT
Micropower Boost Charger with Buck ConverterThe BQ25570RGRT is a micropower boost charger with buck converter from Texas Instruments. View the full BQ25570RGRT datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
BQ25570RGRT shares its datasheet with BQ25570, whose page lists every part number it covers.
Official BQ25570RGRT datasheet (PDF) — the source this page was extracted from.
Manufacturer
Texas InstrumentsCategory
Micropower Boost Charger with Buck Converter
Package
20-VFQFN Exposed Pad
BQ25570RGRT Key Specifications
| Parameter | Value |
|---|---|
| Applications | Energy Harvesting |
| Quiescent Current | 488nA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 125°C |
| Package / Case | 20-VFQFN Exposed Pad |
| Packaging | MouseReel |
| Standard Pack Qty | 250 |
| Supplier Device Package | 20-VQFN (3.5x3.5) |
| Supply Voltage | 0.12V ~ 4V |
BQ25570RGRT Overview
Part: BQ25570 (orderable BQ25570RGRR) — Texas Instruments
Type: Nano-Power Boost Charger and Buck Converter for Energy Harvesting
Description: Ultra-low-power energy harvesting boost charger with 600 mV cold-start, harvesting from VIN as low as 100 mV, 488 nA typical quiescent current, and an integrated nanopower buck converter with up to 93% efficiency and 110 mA typical peak output current.
Operating Conditions:
- DC input voltage (VIN_DC): 0.1–5.1 V
- VBAT / VOUT voltage range: 2–5.5 V
- Operating ambient temperature: -40 to 85 °C
- Operating junction temperature: -40 to 105 °C
- Boost inductor ≥ 22 μH; buck inductor ≥ 4.7 μH
Absolute Maximum Ratings:
- Input voltage on all listed pins (VIN_DC, VBAT, VSTOR, VOUT, LBOOST, LBUCK, etc.): -0.3 to 5.5 V
- Peak input power: 510 mW
- Operating junction temperature: -40 to 125 °C
- Storage temperature: -65 to 150 °C
Key Specs:
- Cold-start input voltage VIN(CS): 600 mV typ, 700 mV max (VBAT < VBAT_UV, VSTOR = 0 V, 0 °C < TA < 85 °C)
- Minimum cold-start input power PIN(CS): 15 μW typ
- VSTOR(CHGEN) (end of cold start): 1.6 min / 1.73 typ / 1.9 max V
- Boost charger cycle-by-cycle current limit: 230 mA typ, 285 mA max (0.5 V < VIN < 4.0 V, VSTOR = 4.2 V)
- Input power range for normal charging: 0.005–510 mW
- Quiescent current, full operating mode (EN = 0, VOUT_EN = 1, VSTOR = 2.1 V, TJ = 25 °C): 488 nA typ, 700 nA max
- Quiescent current, ship mode (EN = 1, VBAT = 2.1 V, TJ = 25 °C): 1 nA typ, 5 nA max
- VBAT–VSTOR switch RDS(on): 0.95 Ω typ, 1.5 Ω max (VBAT = 4.2 V)
- Thermal resistance RθJA: 34.6 °C/W (RGR, 20 pins)
Features:
- Ultra-low-power DC-DC boost charger with cold start at VIN ≥ 600 mV
- Continuous energy harvesting from VIN as low as 100 mV
- Input voltage regulation prevents collapsing high-impedance sources
- Programmable MPPT (50%, 80% of open-circuit voltage, or resistor-divider set)
- Ship mode with < 5 nA from battery
- Internally set undervoltage level and user-programmable overvoltage levels
- Programmable battery-good flag (VBAT_OK) with threshold and hysteresis
- Programmable step-down regulated output (buck) up to 93% efficiency, 110 mA typical peak output current
- Supports Li-ion, thin-film batteries, supercapacitors, or conventional capacitors
Applications:
- Energy harvesting
- Solar chargers
- Thermal electric generator (TEG) harvesting
- Wireless sensor networks
- Low-power wireless monitoring
- Environmental monitoring
- Bridge and structural health monitoring
- Smart building controls
- Portable and wearable health devices
- Entertainment system remote controls
Package:
- VQFN-20 (RGR), 3.50 mm × 3.50 mm
BQ25570RGRT Features
- 1 · Ultra Low Power DC-DC Boost Charger
- -Cold-Start Voltage: VIN ≥ 600 mV
- -Continuous Energy Harvesting From VIN as low as 100 mV
- -Input Voltage Regulation Prevents Collapsing High Impedance Input Sources
- -Full Operating Quiescent Current of 488 nA (typical)
- -Ship Mode with < 5 nA From Battery
- Energy Storage
- -Energy can be Stored to Re-chargeable Li-ion Batteries, Thin-film Batteries, Supercapacitors, or Conventional Capacitors
- Battery Charging and Protection
- -Internally Set Undervoltage Level
- -User Programmable Overvoltage Levels
- Battery Good Output Flag
- -Programmable Threshold and Hysteresis
- -Warn Attached Microcontrollers of Pending Loss of Power
- -Can be Used to Enable or Disable System Loads
- Programmable Step Down Regulated Output (Buck)
- -High Efficiency up to 93%
- -Supports Peak Output Current up to 110 mA (typical)
- Programmable Maximum Power Point Tracking (MPPT)
- -Provides Optimal Energy Extraction From a Variety of Energy Harvesters including Solar Panels, Thermal and Piezo Electric Generators
spacing
BQ25570RGRT Applications
- Energy Harvesting
- Solar Chargers
- Thermal Electric Generator (TEG) Harvesting
- Wireless Sensor Networks (WSN)
- Low Power Wireless Monitoring
- Environmental Monitoring
- Bridge and Structural Health Monitoring (SHM)
- Smart Building Controls
- Portable and Wearable Health Devices
- Entertainment System Remote Controls
BQ25570RGRT Pin Configuration
Pin Functions
| PIN - NAME | PIN - NO. | I/O | DESCRIPTION |
|---|---|---|---|
| EN | 5 | I | Active low digital programming input for enabling/disabling the IC. Connect to GND to enable the IC. |
| LBOOST | 20 | I/O | Inductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC). |
| LBUCK | 16 | I/O | Inductor connection for the buck converter switching node. Connect at least a 4.7 μH inductor between this pin and pin 14 (VOUT). |
| NC | 9 | I | Connect to ground using the IC's PowerPAD™. |
| NC | 17 | I | Connect to ground using the IC's PowerPAD. |
| OK_HYST | 10 | I | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hystersis threshold. If not used, connect this pin to GND. |
| OK_PROG | 11 | I | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND. |
| VBAT | 18 | I/O | Connect a rechargeable storage element with at least 100μF of equivalent capacitance between this pin and either VSS pin. |
| VBAT_OK | 13 | O | Digital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used. |
| VBAT_OV | 7 | I | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT overvoltage threshold. |
| VIN_DC | 2 | I | DC voltage input from energy harvesting source. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1. |
| VOC_SAMP | 3 | I | Sampling pin for MPPT network. Connect to VSTOR to sample at 80% of input source open circuit voltage. Connect to GND for 50% or connect to the mid-point of external resistor divider between VIN_DC and GND. |
| VOUT | 14 | O | Buck converter output. Connect at least 22 μF output capacitor between this pin and pin 15 (VSS). |
| VOUT_EN | 6 | I | Active high digital programming input for enabling/disabling the buck converter. Connect to VSTOR to enable the buck converter. |
| VOUT_SET | 12 | I | Connect to the mid-point of external resistor divider between VRDIV and GND for setting the VOUT regulation set point. |
| VREF_SAMP | 4 | I | Connect a 0.01-μF low-leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit. |
| VRDIV | 8 | O | Connect high side of resistor divider networks to this biasing voltage. |
| VSS | 1 | I | Power ground for the boost charger. |
| VSS | 15 | - | Power ground for the buck converter and analog/signal ground for the resistor dividers and VREF_SAMP capacitor. |
| VSTOR | 19 | O | Connection for the output of the boost charger. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS). |
Pin Functions
BQ25570RGRT Electrical Characteristics
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VSTOR = 4.2 V, VOUT = 1.8 V. External components, CIN = 4.7 μF, L1 = 22 μH, CSTOR = 4.7 μF, L2 = 10 μH, COUT = 22 μF
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| BOOST CHARGER | BOOST CHARGER | BOOST CHARGER | BOOST CHARGER | BOOST CHARGER | BOOST CHARGER | BOOST CHARGER |
| V IN(DC) | DC input voltage into VIN_DC | Cold-start completed | 100 | 5100 | mV | |
| I CHG(CBC_LIM) | Cycle-by-cycle current limit of charger | 0.5V < V IN < 4.0 V; VSTOR = 4.2 V | 230 | 285 | mA | |
| P IN | Input power range for normal charging | VBAT_OV > VSTOR > VSTOR_CHGEN | 0.005 | 510 | mW | |
| V IN(CS) | Minimum input voltage for cold start circuit to start charging VSTOR | VBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C | 600 | 700 | mV | |
| VSTOR (CHGEN) | Voltage on VSTOR when cold start operation ends and normal charger operation commences | 1.6 | 1.73 | 1.9 | V | |
| P IN(CS) | Minimum cold-start input power for VSTOR to reach VSTOR (CHGEN) and allow normal charging to commence | VSTOR < VSTOR (CHGEN) VIN_DC clamped to V IN(CS) by cold start circuit VBAT = 100 μF | 15 | μW | ||
| t BAT_HOT_PLUG | Time for which switch between VSTOR and VBAT closes when battery is hot plugged into VBAT | Battery resistance = 300 Ω , Battery voltage = 3.3V | 50 | ms | ||
| QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS |
| I Q | EN = 0, VOUT_EN = 1 - Full operating mode | VIN_DC = 0V; VSTOR = 2.1V; T J = 25°C | 488 | 700 | nA | |
| I Q | VIN_DC = 0V; VSTOR = 2.1V; -40°C < T J < 85°C | 900 | nA | |||
| I Q | EN = 0, VOUT_EN = 0 - Partial standby mode | VIN_DC = 0V; VSTOR = 2.1V; T J = 25°C | 445 | 615 | nA | |
| I Q | VIN_DC = 0V; VSTOR = 2.1V; -40°C < T J < 85°C | 815 | nA | |||
| I Q | EN = 1, VOUT_EN = x - Ship mode | VBAT = 2.1 V; T J = 25°C; VSTOR = VIN_DC = 0 V | 1 | 5 | nA | |
| I Q | VBAT = 2.1 V; -40°C < T J < 85°C; VSTOR = VIN_DC = 0 V | 30 | nA | |||
| MOSFET RESISTANCES | MOSFET RESISTANCES | MOSFET RESISTANCES | MOSFET RESISTANCES | MOSFET RESISTANCES | MOSFET RESISTANCES | MOSFET RESISTANCES |
| R DS(ON)-BAT | ON resistance of switch between VBAT and VSTOR | VBAT = 4.2 V | 0.95 | 1.50 | Ω |
BQ25570RGRT Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VRDIV, OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBOOST, EN, VOUT_EN, VOUT_SET, LBUCK, VOUT (2) | -0.3 | 5.5 | V |
| Peak Input Power, PIN_PK | Peak Input Power, PIN_PK | 510 | mW | |
| Operating junction temperature, T J | Operating junction temperature, T J | -40 | 125 | °C |
| Storage temperature, T stg | Storage temperature, T stg | -65 | 150 | °C |
BQ25570RGRT Recommended Operating Conditions
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN(DC) | DC input voltage into VIN_DC (1) | 0.1 | 5.1 | V | |
| VBAT, VOUT | Voltage range (2) | 2 | 5.5 | V | |
| CIN | Capacitance on VIN_DC pin | 4.7 | μF | ||
| CSTOR | Capacitance on VSTOR pin | 4.7 | μF | ||
| COUT | Capacitance on VOUT pin | 10 | 22 | μF | |
| CBAT | Capacitance or battery with at least the same equivalent capacitance on VBAT pin | 100 | μF | ||
| CREF | Capacitance on VREF_SAMP that stores the samped VIN reference | 9 | 10 | 11 | nF |
| R OC1 + R OC2 | Total resistance for setting for MPPT reference if needed | 18 | 20 | 22 | M Ω |
| R OK 1 + R OK 2 + R OK3 | Total resistance for setting VBAT_OK threshold voltage. | 11 | 13 | 15 | M Ω |
| R OUT1 + R OUT2 | Total resistance for setting VOUT threshold voltage. | 11 | 13 | 15 | M Ω |
| R OV1 + R OV2 | Total resistance for setting VBAT_OV voltage. | 11 | 13 | 15 | M Ω |
| L1 | Inductance on LBOOST pin | 22 | μH | ||
| L2 | Inductance on LBUCK pin | 4.7 | 10 | μH | |
| T A | Operating free air ambient temperature | -40 | 85 | °C | |
| T J | Operating junction temperature | -40 | 105 | °C |
BQ25570RGRT Thermal Information
| THERMAL METRIC (1) | bq25570 RGR - 20 PINS | UNIT | |
|---|---|---|---|
| R θ JA | Junction-to-ambient thermal resistance | 34.6 | °C/W |
| R θ JC(top) | Junction-to-case (top) thermal resistance | 49.0 | °C/W |
| R θ JB | Junction-to-board thermal resistance | 12.5 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 0.5 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 12.6 | °C/W |
| R θ JC(bot) | Junction-to-case (bottom) thermal resistance | 1.0 | °C/W |
BQ25570RGRT Typical Application
bq25570
SLUSBH2G -MARCH 2013-REVISED MARCH 2019
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25570 | Texas Instruments | VQFN-20 3.5x3.5mm |
| BQ25570RGRR | Texas Instruments | 20-VFQFN Exposed Pad |
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