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BQ25570

Micropower Boost Charger with Buck Converter

The BQ25570 is a micropower boost charger with buck converter from Texas Instruments. View the full BQ25570 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Manufacturer

Texas Instruments

Category

Micropower Boost Charger with Buck Converter

Key Specifications

ParameterValue
ApplicationsEnergy Harvesting
Quiescent Current488nA
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C
Package / Case20-VFQFN Exposed Pad
PackagingMouseReel
PackagingMouseReel
Standard Pack Qty3000
Standard Pack Qty3000
Supplier Device Package20-VQFN (3.5x3.5)
Supplier Device Package20-VQFN (3.5x3.5)
Supply Voltage0.12V ~ 4V

Overview

Part: bq25570 — Texas Instruments

Type: Micropower Boost Charger with Buck Converter

Description: The bq25570 is an ultra-low-power DC/DC boost charger designed for energy harvesting applications, capable of continuous energy harvesting from input voltages as low as 100mV. It integrates battery charging and protection features, along with a high-efficiency, micropower buck converter supporting up to 110mA peak output current and up to 93% efficiency.

Operating Conditions:

  • Supply voltage: VIN as low as 100mV (continuous harvesting)
  • Cold Start Voltage: VIN ≥ 600mV

Absolute Maximum Ratings:

  • Peak Input Power: 510 mW

Key Specs:

  • Cold Start Voltage: VIN ≥ 600mV
  • Continuous Energy Harvesting: VIN as low as 100mV
  • Full Operating Quiescent Current: 488nA (Typical)
  • Shipping Power-Save Mode Battery Current: < 5nA
  • Buck Converter Efficiency: up to 93%
  • Buck Converter Peak Output Current: 110mA (Typical)

Features:

  • Ultra-Low-Power DC/DC Boost Charger
  • Input Voltage Regulation Prevents Collapse of High-Impedance Input Sources
  • Stores Energy into Rechargeable Li-Ion Batteries, Thin-Film Batteries, Super-Capacitors, or Conventional Capacitors
  • Internally Set Undervoltage Level
  • User Programmable Overvoltage Level
  • Battery OK Output Flag with Programmable Threshold and Hysteresis
  • Programmable Buck Regulated Output
  • Programmable Maximum Power Point Tracking (MPPT)

Applications:

  • Energy Harvesting
  • Solar Chargers
  • Thermoelectric Generator (TEG) Energy Harvesting
  • Wireless Sensor Networks (WSN)
  • Low-Power Wireless Monitoring
  • Environmental Monitoring
  • Bridge and Structural Health Monitoring (SHM)
  • Smart Building Controls
  • Portable and Wearable Health Devices
  • Entertainment System Remote Controls

Package:

  • Very Thin Quad Flat No-Lead (VQFN) (20) - 3.50mm x 3.50mm

Features

  • 1 · Ultra-Low-Power DC/DC Boost Charger
  • -Cold Start Voltage: VIN ≥ 600mV
  • -Continuous Energy Harvesting from VIN as Low as 100mV
  • -Input Voltage Regulation Prevents Collapse of High-Impedance Input Sources
  • -488nA (Typical) Full Operating Quiescent Current
  • -Shipping Power-Save Mode with Battery Current < 5nA

Applications

  • Energy Harvesting
  • Solar Chargers
  • Thermoelectric Generator (TEG) Energy Harvesting
  • Wireless Sensor Networks (WSN)
  • Low-Power Wireless Monitoring
  • Environmental Monitoring
  • Bridge and Structural Health Monitoring (SHM)
  • Smart Building Controls
  • Portable and Wearable Health Devices
  • Entertainment System Remote Controls

Pin Configuration

Pin Functions

Pin Functions

PINPINI/ODESCRIPTION
NAMENO.I/ODESCRIPTION
EN5IActive low digital programming input for enabling/disabling the IC. Connect to GND to enable the IC.
LBOOST20I/OInductor connection for the boost charger switching node. Connect a 22 μH inductor between this pin and pin 2 (VIN_DC).
LBUCK16I/OInductor connection for the buck converter switching node. Connect at least a 4.7 μH inductor between this pin and pin 14 (VOUT).
NC9IConnect to ground using the IC's PowerPAD™.
NC17IConnect to ground using the IC's PowerPAD.
OK_HYST10IConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK hystersis threshold. If not used, connect this pin to GND.
OK_PROG11IConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT_OK threshold. If not used, connect this pin to GND.
VBAT18I/OConnect a rechargeable storage element with at least 100μF of equivalent capacitance between this pin and either VSS pin.
VBAT_OK13ODigital output for battery good indicator. Internally referenced to the VSTOR voltage. Leave floating if not used.
VBAT_OV7IConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VBAT overvoltage threshold.
VIN_DC2IDC voltage input from energy harvesting source. Connect at least a 4.7 μF capacitor as close as possible between this pin and pin 1.
VOC_SAMP3ISampling pin for MPPT network. Connect to VSTOR to sample at 80% of input source open circuit voltage. Connect to GND for 50% or connect to the mid-point of external resistor divider between VIN_DC and GND.
VOUT14OBuck converter output. Connect at least 22 μF output capacitor between this pin and pin 15 (VSS).
VOUT_EN6IActive high digital programming input for enabling/disabling the buck converter. Connect to VSTOR to enable the buck converter.
VOUT_SET12IConnect to the mid-point of external resistor divider between VRDIV and GND for setting the VOUT regulation set point.
VREF_SAMP4IConnect a 0.01-μF low-leakage capacitor from this pin to GND to store the voltage to which VIN_DC will be regulated. This voltage is provided by the MPPT sample circuit.
VRDIV8OConnect high side of resistor divider networks to this biasing voltage.
VSS1IPower ground for the boost charger.
VSS15-Power ground for the buck converter and analog/signal ground for the resistor dividers and VREF_SAMP capacitor.
VSTOR19OConnection for the output of the boost charger. Connect at least a 4.7 μF capacitor in parallel with a 0.1 μF capacitor as close as possible to between this pin and pin 1 (VSS).

Pin Functions

Electrical Characteristics

Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VSTOR = 4.2 V, VOUT = 1.8 V. External components, CIN = 4.7 μF, L1 = 22 μH, CSTOR = 4.7 μF, L2 = 10 μH, COUT = 22 μF

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
BOOST CHARGERBOOST CHARGERBOOST CHARGERBOOST CHARGERBOOST CHARGERBOOST CHARGERBOOST CHARGER
V IN(DC)DC input voltage into VIN_DCCold-start completed1005100mV
I CHG(CBC_LIM)Cycle-by-cycle current limit of charger0.5V < V IN < 4.0 V; VSTOR = 4.2 V230285mA
P INInput power range for normal chargingVBAT_OV > VSTOR > VSTOR_CHGEN0.005510mW
V IN(CS)Minimum input voltage for cold start circuit to start charging VSTORVBAT < VBAT_UV; VSTOR = 0 V; 0°C < T A < 85°C600700mV
VSTOR (CHGEN)Voltage on VSTOR when cold start operation ends and normal charger operation commences1.61.731.9V
P IN(CS)Minimum cold-start input power for VSTOR to reach VSTOR (CHGEN) and allow normal charging to commenceVSTOR < VSTOR (CHGEN) VIN_DC clamped to V IN(CS) by cold start circuit VBAT = 100 μF15μW
t BAT_HOT_PLUGTime for which switch between VSTOR and VBAT closes when battery is hot plugged into VBATBattery resistance = 300 Ω , Battery voltage = 3.3V50ms
QUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTSQUIESCENT CURRENTS
I QEN = 0, VOUT_EN = 1 - Full operating modeVIN_DC = 0V; VSTOR = 2.1V; T J = 25°C488700nA
I QVIN_DC = 0V; VSTOR = 2.1V; -40°C < T J < 85°C900nA
I QEN = 0, VOUT_EN = 0 - Partial standby modeVIN_DC = 0V; VSTOR = 2.1V; T J = 25°C445615nA
I QVIN_DC = 0V; VSTOR = 2.1V; -40°C < T J < 85°C815nA
I QEN = 1, VOUT_EN = x - Ship modeVBAT = 2.1 V; T J = 25°C; VSTOR = VIN_DC = 0 V15nA
I QVBAT = 2.1 V; -40°C < T J < 85°C; VSTOR = VIN_DC = 0 V30nA
MOSFET RESISTANCESMOSFET RESISTANCESMOSFET RESISTANCESMOSFET RESISTANCESMOSFET RESISTANCESMOSFET RESISTANCESMOSFET RESISTANCES
R DS(ON)-BATON resistance of switch between VBAT and VSTORVBAT = 4.2 V0.951.50Ω

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MINMAXUNIT
Input voltageVIN_DC, VOC_SAMP, VREF_SAMP, VBAT_OV, VRDIV, OK_HYST, OK_PROG, VBAT_OK, VBAT, VSTOR, LBOOST, EN, VOUT_EN, VOUT_SET, LBUCK, VOUT (2)-0.35.5V
Peak Input Power, PIN_PKPeak Input Power, PIN_PK510mW
Operating junction temperature, T JOperating junction temperature, T J-40125°C
Storage temperature, T stgStorage temperature, T stg-65150°C

Recommended Operating Conditions

MINNOMMAXUNIT
VIN(DC)DC input voltage into VIN_DC (1)0.15.1V
VBAT, VOUTVoltage range (2)25.5V
CINCapacitance on VIN_DC pin4.7μF
CSTORCapacitance on VSTOR pin4.7μF
COUTCapacitance on VOUT pin1022μF
CBATCapacitance or battery with at least the same equivalent capacitance on VBAT pin100μF
CREFCapacitance on VREF_SAMP that stores the samped VIN reference91011nF
R OC1 + R OC2Total resistance for setting for MPPT reference if needed182022M Ω
R OK 1 + R OK 2 + R OK3Total resistance for setting VBAT_OK threshold voltage.111315M Ω
R OUT1 + R OUT2Total resistance for setting VOUT threshold voltage.111315M Ω
R OV1 + R OV2Total resistance for setting VBAT_OV voltage.111315M Ω
L1Inductance on LBOOST pin22μH
L2Inductance on LBUCK pin4.710μH
T AOperating free air ambient temperature-4085°C
T JOperating junction temperature-40105°C

Thermal Information

THERMAL METRIC (1)bq25570 RGRUNIT
20 PINS
R θ JAJunction-to-ambient thermal resistance34.6°C/W
R θ JC(top)Junction-to-case (top) thermal resistance49.0°C/W
R θ JBJunction-to-board thermal resistance12.5°C/W
ψ JTJunction-to-top characterization parameter0.5°C/W
ψ JBJunction-to-board characterization parameter12.6°C/W
R θ JC(bot)Junction-to-case (bottom) thermal resistance1.0°C/W

Typical Application

bq25570

ZHCSBK4G -MARCH 2013-REVISED MARCH 2019

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
BQ25570RGRRTexas Instruments20-VFQFN Exposed Pad
BQ25570RGRTTexas Instruments20-VFQFN Exposed Pad
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