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BGS12WN6E6327

RF CMOS SPDT Antenna Switch

The BGS12WN6E6327 is a rf cmos spdt antenna switch from Infineon Technologies. View the full BGS12WN6E6327 datasheet below including key specifications, absolute maximum ratings.

Official BGS12WN6E6327 datasheet (PDF) — the source this page was extracted from.

Category

RF CMOS SPDT Antenna Switch

BGS12WN6E6327 Key Specifications

ParameterValue
IIP370 dBm typ
Switching Time160 ns typ, 220 ns max
Control Current2 nA typ, 10 nA max
Frequency Range0.05 GHz to 9 GHz
Number Of RF PortsSPDT (RFIN + 2 throw ports)
Package Dimensions0.7 x 1.1 mm, max height 0.375 mm
Control Voltage Low-0.3V to 0.45V
RF Input Power (CW)26 dBm max
Control Voltage High1.35V to VDD
Supply Current (IDD)63 µA typ, 100 µA max (VDD = 1.8V, TA = 25°C)
Supply Voltage (VDD)1.65V to 3.6V
Operating Temperature-40°C to 85°C
Power-Up Settling Time5.8 µs typ, 7 µs max
0.1 DB Compression Point30 dBm min (TA = 25°C)
Insertion Loss (2170-2690 MHz)0.22 dB typ, 0.29 dB max
Insertion Loss (5150-5925 MHz)0.46 dB typ, 0.68 dB max
Isolation RFIN To RF1 (2170-2690 MHz)37 dB typ

BGS12WN6E6327 Overview

Part: BGS12WN6 (BGS12WN6E6327 / E6329) — Infineon Technologies

Type: SPDT RF Switch

Description: 0.05–9 GHz SPDT RF switch with 1.65–3.6 V supply, 0.15 dB typical insertion loss at 50–698 MHz, up to 30 dBm RF input power and 160 ns typical switching time, in a 0.7 × 1.1 mm package.

Operating Conditions:

  • Supply voltage: 1.65–3.6 V (1.8 V typical)
  • Operating temperature: -40 to 85 °C
  • Control voltage: low -0.3 to 0.45 V, high 1.0 V to VDD
  • Frequency range: 0.05–9 GHz

Absolute Maximum Ratings:

  • Max supply voltage: 4.2 V
  • Max junction temperature: 125 °C
  • Storage temperature: -55 to 150 °C
  • Max RF input power at all RF ports: 30 dBm (CW, VSWR 1:1, Z0 = 50 Ω)
  • ESD: HBM ±1 kV, CDM ±1 kV; RF ports ±8 kV (27 nH shunt inductor) or ±6 kV (56 nH shunt inductor)
  • No DC voltage allowed on RF ports

Key Specs:

  • Supply current: 63 μA typ, 100 μA max (TA = 25 °C, VDD = 1.8 V)
  • Control current: 2 nA typ, 10 nA max
  • Insertion loss (all RF ports, 25 °C, VDD = 1.8 V): 0.15 dB typ at 50–698 MHz; 0.19 dB typ at 1200–2170 MHz; 0.46 dB typ at 5150–5925 MHz; 1.12 dB typ (1.85 dB max) at 8237–9000 MHz
  • Return loss: 33 dB typ at 50–698 MHz; 23 dB typ at 1200–2170 MHz; 8 dB typ at 8237–9000 MHz
  • Isolation RFIN to RF1: 53 dB typ at 50–698 MHz; 39 dB typ at 1200–2170 MHz; 22 dB typ at 8237–9000 MHz
  • Switching time: 160 ns typ, 220 ns max; RF rise time 35 ns typ; power-up settling time 5.8 μs typ
  • P0.1dB compression: 30 dBm min; IIP3 63 dBm typ at 2.4 GHz and 66 dBm typ at 6 GHz (WiFi conditions)
  • Cellular IIP2 117 dBm typ; IIP3 70 dBm typ
  • RF input power in operation: 26 dBm CW; 30 dBm at 25 °C and 29 dBm at 85 °C (duty cycle ≤ 1%)

Features:

  • Frequency range 0.05 to 9 GHz
  • Small size 0.7 × 1.1 mm², 0.375 mm max height
  • Fast switching speed
  • Low insertion loss and high port-to-port isolation up to 9 GHz
  • RF input power up to 30 dBm
  • Low current consumption
  • On-chip CMOS logic with direct GPIO control
  • No DC blocking capacitors required if no DC is applied on the RF lines
  • Isolated port is a reflective short
  • RoHS and WEEE compliant package
  • Qualified for industrial applications per JEDEC47/20/22

Applications:

  • IEEE 802.11a/b/g/n/ac/ax WLAN Tx/Rx and antenna switching
  • Bluetooth (up to 6.0)
  • Ultra-Wide-Band (UWB IEEE 802.15.4)
  • Cellular applications (up to 6G)

Package:

  • PG-TSNP-6-10 (6 pins)
  • PG-TSNP-6-2 (6 pins)

BGS12WN6E6327 Features

  • Frequency range from 0.05 to 9 GHz
  • Small size 0.7 × 1.1 mm 2 and ultra-low profile of 0.375 mm height max
  • Fast switching speed
  • Low insertion loss and high port to port isolation up to 9 GHz
  • RF input power up to 30 dBm power
  • Low current consumption
  • No DC blocking capacitors required if no DC applied on RF lines
  • RoHS and WEEE compliant package

BGS12WN6E6327 Applications

Antenna selection and switching of transmit signals (Tx/Rx) in

  • IEEE 802.11a/b/g/n/ac/ax WLAN Networks
  • Bluetooth (up to 6.0)
  • Ultra-Wide-Band (UWB IEEE 802.15.4)
  • Cellular applications (up to 6G)

BGS12WN6E6327 Pin Configuration

Figure 2: BGS12WN6 Pin configuration (top view)

BGS12WN6E6327 Absolute Maximum Ratings

Table 1: Absolute maximum ratings at T A = 25 ° C , unless otherwise specified

ParameterSymbolValues - Min.Values - Typ.Values - Max.UnitNote / Test condition
Frequency range 1)f0.05-9GHz-
Supply voltageV DD0-4.2V-
Storage temperature rangeT STG- 55-150°C-
RF input power at all RF portsP RF,max--30dBmCW/VSWR1:1 / Z 0 = 50 Ω
ESD capability,CDM 2)V ESD,CDM- 1-+1kV-
ESD capability,HBM 3)V ESD,HBM- 1-+1kV-
ESD capability RF ports 4)V ESD,RF- 8-+8kVEach single RF-in/out port ver- sus GND, with 27nH shunt in- ductor
ESD capability RF ports 4)V ESD,RF- 6-+6kVEach single RF-in/out port ver- sus GND, with 56nH shunt in- ductor
Junction temperatureT j--125°C-
Thermal resistance junction - soldering pointR thJS--70K/W-
Maximum DC-voltage on RF ports and RF-GroundV RFDC0-0VNo DC voltages allowed on RF- Ports

BGS12WN6E6327 Package Information

ParameterSymbolValueUnit
X-dimensionX0.7 ± 0.05mm
Y-dimensionY1.1 ± 0.05mm
SizeSize0.77mm 2
Height PG-TSNP-6-10H0.37 +0.03 / - 0.02mm
Height PG-TSNP-6-2H0.375 +0.025 / - 0.015mm

Figure 3: PG-TSNP-6-10 package outline (top, side and bottom views)

Figure 4: PG-TSNP-6-2 package outline (top, side and bottom views)

Figure 5: Footprint recommendation

Figure 6: Marking specification (top view). Monthly date code specified in Table 14.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BGS12WN6Infineon TechnologiesPG-TSNP-6-10

More datasheets

All Infineon Technologies datasheets (140)

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