BGS12WN6

RF CMOS SPDT Switch

The BGS12WN6 is a rf cmos spdt switch from Infineon Technologies. View the full BGS12WN6 datasheet below including key specifications, absolute maximum ratings.

BGS12WN6 shares its datasheet with BGS12WN6E6327, whose page lists every part number it covers.

Official BGS12WN6 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

BGS12WN6 Key Specifications

Parameter	Value
Supply Voltage	1.65 V to 3.6 V
Frequency Range	0.05 GHz to 9 GHz
Control Interface	Single-pin CMOS/TTL compatible
Operating Current	63 µA to 120 µA
Package Dimensions	0.7 mm x 1.1 mm
Rf Input Power Max	26 dBm to 30 dBm
Operating Temperature Range	-40 °C to 85 °C

BGS12WN6 Overview

Part: BGS12WN6 (BGS12WN6E6327 / E6329) — Infineon Technologies

Type: SPDT RF Switch

Description: 0.05–9 GHz SPDT RF switch with 1.65–3.6 V supply, 0.15 dB typical insertion loss at 50–698 MHz, up to 30 dBm RF input power and 160 ns typical switching time, in a 0.7 × 1.1 mm package.

Operating Conditions:

Supply voltage: 1.65–3.6 V (1.8 V typical)
Operating temperature: -40 to 85 °C
Control voltage: low -0.3 to 0.45 V, high 1.0 V to VDD
Frequency range: 0.05–9 GHz

Absolute Maximum Ratings:

Max supply voltage: 4.2 V
Max junction temperature: 125 °C
Storage temperature: -55 to 150 °C
Max RF input power at all RF ports: 30 dBm (CW, VSWR 1:1, Z0 = 50 Ω)
ESD: HBM ±1 kV, CDM ±1 kV; RF ports ±8 kV (27 nH shunt inductor) or ±6 kV (56 nH shunt inductor)
No DC voltage allowed on RF ports

Key Specs:

Supply current: 63 μA typ, 100 μA max (TA = 25 °C, VDD = 1.8 V)
Control current: 2 nA typ, 10 nA max
Insertion loss (all RF ports, 25 °C, VDD = 1.8 V): 0.15 dB typ at 50–698 MHz; 0.19 dB typ at 1200–2170 MHz; 0.46 dB typ at 5150–5925 MHz; 1.12 dB typ (1.85 dB max) at 8237–9000 MHz
Return loss: 33 dB typ at 50–698 MHz; 23 dB typ at 1200–2170 MHz; 8 dB typ at 8237–9000 MHz
Isolation RFIN to RF1: 53 dB typ at 50–698 MHz; 39 dB typ at 1200–2170 MHz; 22 dB typ at 8237–9000 MHz
Switching time: 160 ns typ, 220 ns max; RF rise time 35 ns typ; power-up settling time 5.8 μs typ
P0.1dB compression: 30 dBm min; IIP3 63 dBm typ at 2.4 GHz and 66 dBm typ at 6 GHz (WiFi conditions)
Cellular IIP2 117 dBm typ; IIP3 70 dBm typ
RF input power in operation: 26 dBm CW; 30 dBm at 25 °C and 29 dBm at 85 °C (duty cycle ≤ 1%)

Features:

Frequency range 0.05 to 9 GHz
Small size 0.7 × 1.1 mm², 0.375 mm max height
Fast switching speed
Low insertion loss and high port-to-port isolation up to 9 GHz
RF input power up to 30 dBm
Low current consumption
On-chip CMOS logic with direct GPIO control
No DC blocking capacitors required if no DC is applied on the RF lines
Isolated port is a reflective short
RoHS and WEEE compliant package
Qualified for industrial applications per JEDEC47/20/22

Applications:

IEEE 802.11a/b/g/n/ac/ax WLAN Tx/Rx and antenna switching
Bluetooth (up to 6.0)
Ultra-Wide-Band (UWB IEEE 802.15.4)
Cellular applications (up to 6G)

Package:

PG-TSNP-6-10 (6 pins)
PG-TSNP-6-2 (6 pins)

BGS12WN6 Features

Frequency range from 0.05 to 9 GHz
Small size 0.7 × 1.1 mm 2 and ultra-low profile of 0.375 mm height max
Fast switching speed
Low insertion loss and high port to port isolation up to 9 GHz
RF input power up to 30 dBm power
Low current consumption
No DC blocking capacitors required if no DC applied on RF lines
RoHS and WEEE compliant package

BGS12WN6 Applications

Antenna selection and switching of transmit signals (Tx/Rx) in

IEEE 802.11a/b/g/n/ac/ax WLAN Networks
Bluetooth (up to 6.0)
Ultra-Wide-Band (UWB IEEE 802.15.4)
Cellular applications (up to 6G)

BGS12WN6 Pin Configuration

Figure 2: BGS12WN6 Pin configuration (top view)

BGS12WN6 Absolute Maximum Ratings

Table 1: Absolute maximum ratings at T A = 25 ° C , unless otherwise specified

Parameter	Symbol	Values - Min.	Values - Typ.	Values - Max.	Unit	Note / Test condition
Frequency range 1)	f	0.05	-	9	GHz	-
Supply voltage	V DD	0	-	4.2	V	-
Storage temperature range	T STG	- 55	-	150	°C	-
RF input power at all RF ports	P RF,max	-	-	30	dBm	CW/VSWR1:1 / Z 0 = 50 Ω
ESD capability,CDM 2)	V ESD,CDM	- 1	-	+1	kV	-
ESD capability,HBM 3)	V ESD,HBM	- 1	-	+1	kV	-
ESD capability RF ports 4)	V ESD,RF	- 8	-	+8	kV	Each single RF-in/out port ver- sus GND, with 27nH shunt in- ductor
ESD capability RF ports 4)	V ESD,RF	- 6	-	+6	kV	Each single RF-in/out port ver- sus GND, with 56nH shunt in- ductor
Junction temperature	T j	-	-	125	°C	-
Thermal resistance junction - soldering point	R thJS	-	-	70	K/W	-
Maximum DC-voltage on RF ports and RF-Ground	V RFDC	0	-	0	V	No DC voltages allowed on RF- Ports

BGS12WN6 Package Information

Parameter	Symbol	Value	Unit
X-dimension	X	0.7 ± 0.05	mm
Y-dimension	Y	1.1 ± 0.05	mm
Size	Size	0.77	mm 2
Height PG-TSNP-6-10	H	0.37 +0.03 / - 0.02	mm
Height PG-TSNP-6-2	H	0.375 +0.025 / - 0.015	mm

Figure 3: PG-TSNP-6-10 package outline (top, side and bottom views)

Figure 4: PG-TSNP-6-2 package outline (top, side and bottom views)

Figure 5: Footprint recommendation

Figure 6: Marking specification (top view). Monthly date code specified in Table 14.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
BGS12WN6E6327	Infineon Technologies	—

More datasheets

All Infineon Technologies datasheets (140)

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