ATTINY85

Atmel 8-bit AVR Microcontroller with 2/4/8K Bytes In-System Programmable Flash

Manufacturer

microchip

Overview

Part: Atmel ATtiny25/V / ATtiny45/V / ATtiny85/V

Type: 8-bit AVR Microcontroller

Key Specs:

  • Program Memory Flash: 2/4/8K Bytes
  • Program Memory Flash Endurance: 10,000 Write/Erase Cycles
  • EEPROM: 128/256/512 Bytes
  • EEPROM Endurance: 100,000 Write/Erase Cycles
  • Internal SRAM: 128/256/512 Bytes
  • Programmable I/O Lines: Six
  • Operating Voltage (ATtiny25V/45V/85V): 1.8-5.5V
  • Operating Voltage (ATtiny25/45/85): 2.7-5.5V
  • Speed Grade (ATtiny25V/45V/85V): 0-4 MHz @ 1.8-5.5V, 0-10 MHz @ 2.7-5.5V
  • Speed Grade (ATtiny25/45/85): 0-10 MHz @ 2.7-5.5V, 0-20 MHz @ 4.5-5.5V
  • Active Mode Current (1 MHz, 1.8V): 300 µA
  • Power-down Mode Current (1.8V): 0.1 µA

Features:

  • High Performance, Low Power AVR 8-Bit Microcontroller
  • Advanced RISC Architecture (120 Powerful Instructions, 32 x 8 General Purpose Working Registers, Fully Static Operation)
  • Programming Lock for Self-Programming Flash Program and EEPROM Data Security
  • 8-bit Timer/Counter with Prescaler and Two PWM Channels
  • 8-bit High Speed Timer/Counter with Separate Prescaler
  • 2 High Frequency PWM Outputs with Separate Output Compare Registers
  • Programmable Dead Time Generator
  • USI Universal Serial Interface with Start Condition Detector
  • 10-bit ADC (4 Single Ended Channels, 2 Differential ADC Channel Pairs with Programmable Gain (1x, 20x), Temperature Measurement)
  • Programmable Watchdog Timer with Separate On-chip Oscillator
  • On-chip Analog Comparator
  • debugWIRE On-chip Debug System
  • In-System Programmable via SPI Port
  • External and Internal Interrupt Sources
  • Low Power Idle, ADC Noise Reduction, and Power-down Modes

Features

  • High Performance, Low Power AVR® 8-Bit Microcontroller
  • Advanced RISC Architecture
    • 120 Powerful Instructions Most Single Clock Cycle Execution
    • 32 x 8 General Purpose Working Registers
    • Fully Static Operation
  • Non-volatile Program and Data Memories
    • 2/4/8K Bytes of In-System Programmable Program Memory Flash
      • Endurance: 10,000 Write/Erase Cycles
    • 128/256/512 Bytes In-System Programmable EEPROM
      • Endurance: 100,000 Write/Erase Cycles
    • 128/256/512 Bytes Internal SRAM
    • Programming Lock for Self-Programming Flash Program and EEPROM Data Security
  • Peripheral Features
    • 8-bit Timer/Counter with Prescaler and Two PWM Channels
    • 8-bit High Speed Timer/Counter with Separate Prescaler
      • 2 High Frequency PWM Outputs with Separate Output Compare Registers
      • Programmable Dead Time Generator
    • USI Universal Serial Interface with Start Condition Detector
    • 10-bit ADC
      • 4 Single Ended Channels
      • 2 Differential ADC Channel Pairs with Programmable Gain (1x, 20x)
      • Temperature Measurement
    • Programmable Watchdog Timer with Separate On-chip Oscillator
    • On-chip Analog Comparator
  • Special Microcontroller Features
    • debugWIRE On-chip Debug System
    • In-System Programmable via SPI Port
    • External and Internal Interrupt Sources
    • Low Power Idle, ADC Noise Reduction, and Power-down Modes
    • Enhanced Power-on Reset Circuit
    • Programmable Brown-out Detection Circuit
    • Internal Calibrated Oscillator
  • I/O and Packages
    • Six Programmable I/O Lines
    • 8-pin PDIP, 8-pin SOIC, 20-pad QFN/MLF, and 8-pin TSSOP (only ATtiny45/V)
  • Operating Voltage
    • 1.8 5.5V for ATtiny25V/45V/85V
    • 2.7 5.5V for ATtiny25/45/85
  • Speed Grade
    • ATtiny25V/45V/85V: 0 4 MHz @ 1.8 5.5V, 0 10 MHz @ 2.7 5.5V
    • ATtiny25/45/85: 0 10 MHz @ 2.7 5.5V, 0 20 MHz @ 4.5 5.5V
  • Industrial Temperature Range
  • Low Power Consumption
    • Active Mode:
      • 1 MHz, 1.8V: 300 µA
    • Power-down Mode:
      • 0.1 µA at 1.8V

Rev. 2586Q–AVR–08/2013

Pin Configuration

Figure 1-1. Pinout ATtiny25/45/85

DNC: Do Not Connect

Electrical Characteristics

Table 21-1. DC Characteristics. $T_A = -40^{\circ}\text{C}$ to $+85^{\circ}\text{C}$

SymbolParameterConditionMin.Typ. (1)Max.Units
V ILInput Low-voltage, except
XTAL1 and RESET pin
V CC = 1.8V - 2.4V
V CC = 2.4V - 5.5V
-0.5
-0.5
0.2V CC (3)
0.3V CC (3)
V
V
V IHInput High-voltage, except XTAL1 and RESET pinV CC = 1.8V - 2.4V
V CC = 2.4V - 5.5V
0.7V CC (2)
0.6V CC (2)
V CC +0.5
V CC +0.5
V
V
V IL1Input Low-voltage, XTAL1 pin, External Clock SelectedV CC = 1.8V - 5.5V-0.50.1V CC (3)V
V IH1Input High-voltage, XTAL1 pin, External Clock SelectedV CC = 1.8V - 2.4V
V CC = 2.4V - 5.5V
0.8V CC (2)
0.7V CC (2)
V CC +0.5
V CC +0.5
V
V
V IL2Input Low-voltage, RESET pinV CC = 1.8V - 5.5V-0.50.2V CC (3)V
V
V IH2Input High-voltage, RESET pinV CC = 1.8V - 5.5V0.9V CC (2)V CC +0.5V
V IL3Input Low-voltage, RESET pin as I/OV CC = 1.8V - 2.4V
V CC = 2.4V - 5.5V
-0.5
-0.5
0.2V CC (3)
0.3V CC (3)
V
V
$V_{IH3}$Input High-voltage,
RESET pin as I/O
$V_{CC} = 1.8V - 2.4V$
$V_{CC} = 2.4V - 5.5V$
0.7V CC (2)
0.6V CC (2)
V CC +0.5
V CC +0.5
V
V
V OLOutput Low-voltage, (4) Port B (except RESET) (6)$I_{OL} = 10 \text{ mA}, V_{CC} = 5V$
$I_{OL} = 5 \text{ mA}, V_{CC} = 3V$
0.6
0.5
V
V
V OHOutput High-voltage, (5) Port B (except RESET) (6)$I_{OH}$ = -10 mA, $V_{CC}$ = 5V
$I_{OH}$ = -5 mA, $V_{CC}$ = 3V
4.3
2.5
V
V
I ILInput Leakage
Current I/O Pin
V CC = 5.5V, pin low (absolute value)< 0.051μΑ
I IHInput Leakage
Current I/O Pin
V CC = 5.5V, pin high (absolute value)< 0.051μΑ
R RSTReset Pull-up Resistor$V_{CC} = 5.5V$ , input low3060

Table 21-1. DC Characteristics. TA = -40C to +85C (Continued)

SymbolParameterConditionMin.Typ.(1)Max.Units
RpuI/O Pin Pull-up ResistorVCC = 5.5V, input low2050k
Active 1 MHz, VCC = 2V0.30.55mA
Power Supply Current (7)Active 4 MHz, VCC = 3V1.52.5mA
Active 8 MHz, VCC = 5V58mA
Idle 1 MHz, VCC = 2V0.10.2mA
ICCIdle 4 MHz, VCC = 3V0.350.6mA
Idle 8 MHz, VCC = 5V1.22mA
WDT enabled, VCC = 3V10µA
Power-down mode (8)WDT disabled, VCC = 3V2µA

  • Notes: 1. Typical values at 25C.
    • 2. "Min" means the lowest value where the pin is guaranteed to be read as high.
      1. "Max" means the highest value where the pin is guaranteed to be read as low.
      1. Although each I/O port can sink more than the test conditions (10 mA at VCC = 5V, 5 mA at VCC = 3V) under steady state conditions (non-transient), the following must be observed:
      • 1] The sum of all IOL, for all ports, should not exceed 60 mA.
      • If IOL exceeds the test condition, VOL may exceed the related specification. Pins are not guaranteed to sink current greater than the listed test condition.
      1. Although each I/O port can source more than the test conditions (10 mA at VCC = 5V, 5 mA at VCC = 3V) under steady state conditions (non-transient), the following must be observed:
      • 1] The sum of all IOH, for all ports, should not exceed 60 mA.
      • If IOH exceeds the test condition, VOH may exceed the related specification. Pins are not guaranteed to source current greater than the listed test condition.
      1. The RESET pin must tolerate high voltages when entering and operating in programming modes and, as a consequence, has a weak drive strength as compared to regular I/O pins. See Figure 22-23, Figure 22-24, Figure 22-25, and Figure 22-26 (starting on page 184).
      1. Values are with external clock using methods described in "Minimizing Power Consumption" on page 36. Power Reduction is enabled (PRR = 0xFF) and there is no I/O drive.
      1. Brown-Out Detection (BOD) disabled.

Absolute Maximum Ratings

Operating Temperature55°C to +125°C
Storage Temperature65°C to +150°C
Voltage on any Pin except RESET with respect to Ground0.5V to V CC +0.5V
Voltage on RESET with respect to Ground0.5V to +13.0V
Maximum Operating Voltage
DC Current per I/O Pin 40.0 mA
DC Current V CC and GND Pins200.0 mA

*NOTICE:

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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