ZD25WQ16CEIGR
Serial Multi I/O Flash MemoryThe ZD25WQ16CEIGR is a serial multi i/o flash memory from Zetta Device. View the full ZD25WQ16CEIGR datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Zetta Device
Category
Serial Multi I/O Flash Memory
Overview
Part: ZD25WQ16B
Type: Serial Multi I/O Flash Memory
Description: An ultra-low power, 16M-bit serial multi I/O Flash memory with a wide supply range of 1.65V to 3.6V, supporting X1, X2, and X4 I/O modes, and offering high reliability with 100K cycling and 20-year data retention.
Operating Conditions:
- Supply voltage: 1.65V to 3.6V
- Operating temperature: -40°C to 85°C
- SPI Modes: Mode 0 and Mode 3
Absolute Maximum Ratings:
- Max supply voltage: 4.0V
- Max junction/storage temperature: 150°C
Key Specs:
- Memory density: 16M-bit
- Active Read current: 4mA at 33MHz
- Active Program or Erase current: 6mA
- Deep Power Down current: 0.1μA
- Standby current: 12μA
- Page program time: 1.3ms
- Sector erase time (4K-byte): 10ms
- Block erase time (32K/64K-byte): 10ms
- Chip erase time: 10ms
- Program/Erase Cycles: 100,000
- Data Retention: 20 years
Features:
- Single, Dual and Quad IO mode
- Flexible Architecture for Code and Data Storage (Page, Sector, Block, Chip Erase)
- One Time Programmable (OTP) Security Register (3*512-Byte)
- Software Protection Mode (Block Protect bits)
- 128-bit unique ID
- Program/Erase Suspend and Resume
- Hardware Protection Mode (WP Pin)
Applications:
- High-volume consumer based applications where program code is shadowed from Flash memory into RAM
- Data storage applications
Package:
- 8-pin SOP (150mil/208mil)
- 8-land USON (3x2x0.55mm)
- 8-land WSON (6x5mm)
- 8-pin TSSOP
- WLCSP
- KGD for SiP
Features
- One Time Programmable (OTP) Security Register
- -3*512-Byte Security Registers With OTP Lock
- Software Protection Mode
- -TheBlockProtect(BP4,BP3,BP2,BP1,andBP0)bitsdefinethesectionofthememoryarraythatcanbe read but not change.
- 128 bit unique ID for each device
- Program/Erase Suspend and Program/Erase Resume
- JEDEC Standard Manufacturer and Device ID Read Methodology
Pin Configuration
8-PIN SOP(150mil/200mil) andTSSOP
Electrical Characteristics
| Sym. | Parameter | Conditions | 1.65V to 2.3V | 1.65V to 2.3V | 1.65V to 2.3V | 2.3V to 3.6V | 2.3V to 3.6V | 2.3V to 3.6V | Units |
|---|---|---|---|---|---|---|---|---|---|
| Sym. | Parameter | Conditions | Min. | Typ. | Max. | Min. | Typ. | Max. | Units |
| I DPD | Deep power down current | CS#=Vcc, all other inputs at 0V or Vcc | 0.5 | 1.5 | 0.5 | 1.5 | μA | ||
| I SB | Standby current | CS#, HOLD#, WP#=VIH all inputs at CMOS | 12 | 12 | μA | ||||
| I CC1 | Low power read current (03h) | f=33MHz; IOUT=0mA | 1.3 | 3.0 | 2.3 | 3.0 | mA | ||
| I CC2 | Read current (0Bh) | f=80MHz; IOUT=0mA | 1.8 | 4.0 | 2.8 | 4.0 | mA | ||
| I CC2 | Read current (0Bh) | f=85MHz; IOUT=0mA | - | - | 2.8 | 4.5 | mA | ||
| I CC3 | Program current | CS#=Vcc | 2.5 | 6.0 | 5.0 | 6.0 | mA | ||
| I CC4 | Erase current | CS#=Vcc | 2.5 | 6.0 | 5.0 | 6.0 | mA | ||
| I LI | Input load current | All inputs at CMOS | 1.0 | 1.0 | μA | ||||
| I L O | Output leakage | All inputs at CMOS | 1.0 | 1.0 | μA | ||||
| V IL | Input low voltage | 0.2Vcc | 0.3Vcc | V | |||||
| V IH | Input high voltage | 0.8Vcc | 0.7Vcc | V | |||||
| V OL | Output low voltage | IOL=100μA | 0.2 | 0.2 | V | ||||
| V OH | Output high voltage | IOH=-100μA | Vcc-0.2 | Vcc-0.2 | V |
Absolute Maximum Ratings
| Parameters | Value |
|---|---|
| Storage Temperature | -65°C to +150°C |
| Operation Temperature | .-40°C to +125°C |
| Maximum Operation Voltage | 4.0V |
| Voltage on Any Pin with respect to Ground | -0.6V to + 4.1V |
| DC Output Current | 5.0 mA |
NOTICE: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
Figure 4-1 Maximum Overshoot Waveform
Maxinum Negative Overshoot Waveform
Table 4-1 Pin Capacitance [1]
Maxinum Positive Overshoot Waveform
| Symbol | Parameter | Max. | Units | Test Condition |
|---|---|---|---|---|
| C OUT | Output Capacitance | 8 | pF | V OUT =GND |
| C IN | Input Capacitance | 6 | pF | V IN =GND |
Note:
Test Conditions: TA = 25°C, F = 1MHz, Vcc = 3.0V.
Figure 4-2 Input Test Waveforms and Measurement Level
Note
:
Inputpulse rise and fall time eara < 5ns
Figure 4-3 Output Loading
Figure 4-3 Output Loading
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| ZD25WQ16B | Zetta Device | — |
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