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ZD25WQ16CEIGR

Serial Multi I/O Flash Memory

The ZD25WQ16CEIGR is a serial multi i/o flash memory from Zetta Device. View the full ZD25WQ16CEIGR datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Official ZD25WQ16CEIGR datasheet (PDF) — the source this page was extracted from.

Manufacturer

Zetta Device

Category

Memory ICs

ZD25WQ16CEIGR Key Specifications

ParameterValue
Device ID14
Endurance100K cycles
InterfaceSPI with X1, X2, X4 Multi I/O
Data Retention20 years
Memory Density16Mbit (2MB)
Memory Type ID60
Supply Voltage1.65V to 3.6V
Chip Erase Time10ms
Manufacturer IDBA
Erase GranularityPage/4KB Sector/32KB Block/64KB Block
Active Current (Read/Erase/Program)2.5mA

ZD25WQ16CEIGR Overview

Part: ZD25WQ16B

Type: Serial Multi I/O Flash Memory

Description: An ultra-low power, 16M-bit serial multi I/O Flash memory with a wide supply range of 1.65V to 3.6V, supporting X1, X2, and X4 I/O modes, and offering high reliability with 100K cycling and 20-year data retention.

Operating Conditions:

  • Supply voltage: 1.65V to 3.6V
  • Operating temperature: -40°C to 85°C
  • SPI Modes: Mode 0 and Mode 3

Absolute Maximum Ratings:

  • Max supply voltage: 4.0V
  • Max junction/storage temperature: 150°C

Key Specs:

  • Memory density: 16M-bit
  • Active Read current: 4mA at 33MHz
  • Active Program or Erase current: 6mA
  • Deep Power Down current: 0.1μA
  • Standby current: 12μA
  • Page program time: 1.3ms
  • Sector erase time (4K-byte): 10ms
  • Block erase time (32K/64K-byte): 10ms
  • Chip erase time: 10ms
  • Program/Erase Cycles: 100,000
  • Data Retention: 20 years

Features:

  • Single, Dual and Quad IO mode
  • Flexible Architecture for Code and Data Storage (Page, Sector, Block, Chip Erase)
  • One Time Programmable (OTP) Security Register (3*512-Byte)
  • Software Protection Mode (Block Protect bits)
  • 128-bit unique ID
  • Program/Erase Suspend and Resume
  • Hardware Protection Mode (WP Pin)

Applications:

  • High-volume consumer based applications where program code is shadowed from Flash memory into RAM
  • Data storage applications

Package:

  • 8-pin SOP (150mil/208mil)
  • 8-land USON (3x2x0.55mm)
  • 8-land WSON (6x5mm)
  • 8-pin TSSOP
  • WLCSP
  • KGD for SiP

ZD25WQ16CEIGR Features

  • One Time Programmable (OTP) Security Register
  • -3*512-Byte Security Registers With OTP Lock
  • Software Protection Mode
  • -TheBlockProtect(BP4,BP3,BP2,BP1,andBP0)bitsdefinethesectionofthememoryarraythatcanbe read but not change.
  • 128 bit unique ID for each device
  • Program/Erase Suspend and Program/Erase Resume
  • JEDEC Standard Manufacturer and Device ID Read Methodology

ZD25WQ16CEIGR Pin Configuration

PinNameTypeDescription
1CS#-Chip select
2SO-Serial data output for 1 x I/O Serial data input and output for 4 x I/O read mode (alt: SIO1)
3WP#-Write protection active low Serial data input and output for 4 x I/O read mode (alt: SIO2)
4GND-Ground of the device
5SI-Serial data input for 1x I/O Serial data input and output for 4 x I/O read mode (alt: SIO0)
6SCLK-Serial interface clock input
7HOLD#-To pause the device without deselecting the device Serial data input and output for 4 x I/O read mode (alt: SIO3)
8VCC-Power supply of the device

ZD25WQ16CEIGR Electrical Characteristics

Sym.ParameterConditions1.65V to 2.3V1.65V to 2.3V1.65V to 2.3V2.3V to 3.6V2.3V to 3.6V2.3V to 3.6VUnits
Sym.ParameterConditionsMin.Typ.Max.Min.Typ.Max.Units
I DPDDeep power down currentCS#=Vcc, all other inputs at 0V or Vcc0.51.50.51.5μA
I SBStandby currentCS#, HOLD#, WP#=VIH all inputs at CMOS1212μA
I CC1Low power read current (03h)f=33MHz; IOUT=0mA1.33.02.33.0mA
I CC2Read current (0Bh)f=80MHz; IOUT=0mA1.84.02.84.0mA
I CC2Read current (0Bh)f=85MHz; IOUT=0mA--2.84.5mA
I CC3Program currentCS#=Vcc2.56.05.06.0mA
I CC4Erase currentCS#=Vcc2.56.05.06.0mA
I LIInput load currentAll inputs at CMOS1.01.0μA
I L OOutput leakageAll inputs at CMOS1.01.0μA
V ILInput low voltage0.2Vcc0.3VccV
V IHInput high voltage0.8Vcc0.7VccV
V OLOutput low voltageIOL=100μA0.20.2V
V OHOutput high voltageIOH=-100μAVcc-0.2Vcc-0.2V

ZD25WQ16CEIGR Absolute Maximum Ratings

ParametersValue
Storage Temperature-65°C to +150°C
Operation Temperature.-40°C to +125°C
Maximum Operation Voltage4.0V
Voltage on Any Pin with respect to Ground-0.6V to + 4.1V
DC Output Current5.0 mA

NOTICE: Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Figure 4-1 Maximum Overshoot Waveform

Maxinum Negative Overshoot Waveform

Table 4-1 Pin Capacitance [1]

Maxinum Positive Overshoot Waveform

SymbolParameterMax.UnitsTest Condition
C OUTOutput Capacitance8pFV OUT =GND
C INInput Capacitance6pFV IN =GND

Note:

Test Conditions: TA = 25°C, F = 1MHz, Vcc = 3.0V.

Figure 4-2 Input Test Waveforms and Measurement Level

Note

:

Inputpulse rise and fall time eara < 5ns

Figure 4-3 Output Loading

Figure 4-3 Output Loading

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
ZD25WQ16BZetta Device—

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