ULN2002A

Darlington Array

The ULN2002A is a darlington array from STMicroelectronics. View the full ULN2002A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

ULN2002A shares its datasheet with ULN2001A, whose page lists every part number it covers.

Official ULN2002A datasheet (PDF) — the source this page was extracted from.

Manufacturer

STMicroelectronics

ULN2002A Key Specifications

Parameter	Value
Output Leakage Current (ICEX)	50 mA (VCE = 50V, Tamb = 70 °C)
Collector-emitter Saturation Voltage (VCE(sat))	0.9 V (Typ, IC = 100mA, IB = 250 μA)
Input Current (Ii(on))	0.82 mA (Typ, for ULN2002A, Vi = 17V)
Input Voltage (Vi(on))	2.4 V (Max, for ULN2003A, IC = 300mA)
DC Forward Current Gain (hFE)	1000 (Min, for ULN2001A, VCE = 2V, IC = 350mA)
Input Capacitance (Ci)	15 pF (Typ)
Turn-on Delay Time (tPLH)	0.25 μs (Typ)
Clamp Diode Forward Voltage (VF)	1.7 V (Typ, IF = 350mA)

ULN2002A Overview

Part: ULN2001A, ULN2002A, ULN2003A, ULN2004A — STMicroelectronics

Type: High Voltage, High Current Darlington Array

Description: A series of high voltage, high current darlington arrays, each containing seven open collector darlington pairs with common emitters, rated at 500mA per channel with integrated suppression diodes for inductive loads.

Operating Conditions:

Operating temperature: -20 to 85 °C

Absolute Maximum Ratings:

Max output voltage: 50 V
Max input voltage: 30 V (for ULN2002A/D - 2003A/D - 2004A/D)
Max continuous collector current: 500 mA
Max continuous base current: 25 mA
Max junction temperature: 150 °C
Max storage temperature: -55 to 150 °C

Key Specs:

Output Leakage Current (ICEX): 50 mA (VCE = 50V, Tamb = 70 °C)
Collector-emitter Saturation Voltage (VCE(sat)): 0.9 V (Typ, IC = 100mA, IB = 250 μA)
Input Current (Ii(on)): 0.82 mA (Typ, for ULN2002A, Vi = 17V)
Input Voltage (Vi(on)): 2.4 V (Max, for ULN2003A, IC = 300mA)
DC Forward Current Gain (hFE): 1000 (Min, for ULN2001A, VCE = 2V, IC = 350mA)
Input Capacitance (Ci): 15 pF (Typ)
Turn-on Delay Time (tPLH): 0.25 μs (Typ)
Clamp Diode Forward Voltage (VF): 1.7 V (Typ, IF = 350mA)

Features:

Seven darlingtons per package
Outputs can be paralleled for higher current
TTL/CMOS/PMOS/DTL compatible inputs
Inputs pinned opposite outputs to simplify layout
Integrated suppression diodes for inductive loads

Applications:

Solenoids
Relays
DC motors
LED displays
Filament lamps
Thermal printheads
High power buffers

Package:

16 pin plastic DIP
SO-16 (Small Outline Package)

ULN2002A Electrical Characteristics

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit	Fig.
I CEX	Output Leakage Current	V CE = 50V T amb = 70 C, V CE = 50V T amb = 70 C for ULN2002A V CE = 50V, V i = 6V for ULN2004A V CE = 50V, V i = 1V			50 100 500 500	m A m A m A m A	1a 1a 1b 1b
V CE(sat)	Collector-emitter Saturation Voltage	I C = 100mA, I B = 250 m A I C = 200 mA, I B = 350 m A I C = 350mA, I B = 500 m A		0.9 1.1 1.3	1.1 1.3 1.6	V V V	2 2 2
I i(on)	Input Current	for ULN2002A, V i = 17V for ULN2003A, V i = 3.85V for ULN2004A, V i = 5V V i = 12V		0.82 0.93 0.35 1	1.25 1.35 0.5 1.45	mA mA mA mA	3 3 3 3
I i(off)	Input Current	T amb = 70 C, I C = 500 m A	50	65		m A	4
V i(on)	Input Voltage	V CE = 2V for ULN2002A I C = 300mA for ULN2003A I C = 200mA I C = 250mA I C = 300mA for ULN2004A I C = 125mA I C = 200mA I C = 275mA I C = 350mA			13 2.4 2.7 3 5 6 7 8	V	5
h FE	DC Forward Current Gain	for ULN2001A V CE = 2V, I C = 350mA	1000				2
C i	Input Capacitance			15	25	pF
t PLH	Turn-on Delay Time	0.5 V i to 0.5 V o		0.25	1	m s
t PHL	Turn-off Delay Time	0.5 V i to 0.5 V o		0.25	1	m s
I R	Clamp Diode Leakage Current	V R = 50V T amb = 70 C, V R = 50V			50 100	m A m A	6 6
V F	Clamp Diode Forward Voltage	I F = 350mA		1.7	2	V	7

ULN2002A Absolute Maximum Ratings

Symbol	Parameter	Value	Unit
V o	Output Voltage	50	V
V in	Input Voltage (for ULN2002A/D - 2003A/D - 2004A/D)	30	V
I c	Continuous Collector Current	500	mA
I b	Continuous Base Current	25	mA
T amb	Operating Ambient Temperature Range	- 20 to 85	C
T stg	Storage Temperature Range	- 55 to 150	C
T j	Junction Temperature	150	C

ULN2002A Thermal Information

Symbol	Parameter	DIP16	SO16	Unit
R th j-amb	Thermal Resistance Junction-ambient	70	120	C/W

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All Discrete Semiconductors datasheets All STMicroelectronics datasheets (808)

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