ULN2002A

ULN2001A-ULN2002A ULN2003A-ULN2004A

Manufacturer

STMicroelectronics

Category

Discrete Semiconductor Products

Overview

Part: ULN2001A, ULN2002A, ULN2003A, ULN2004A

Type: Darlington Array

Key Specs:

  • Seven Darlingtons per package
  • Output Current: 500mA per driver (600mA peak)
  • Output Voltage: 50V
  • Operating Ambient Temperature Range: -20 to 85 °C

Features:

  • Integrated suppression diodes for inductive loads
  • Outputs can be paralleled for higher current
  • TTL/CMOS/PMOS/DTL compatible inputs
  • Inputs pinned opposite outputs to simplify layout
  • High voltage, high current
  • Common emitters

Applications:

  • Solenoids
  • Relays
  • DC motors
  • LED displays
  • Filament lamps
  • Thermal printheads
  • High power buffers

Package:

  • 16 pin plastic DIP: D max 20mm, E typ 8.5mm, F max 7.1mm
  • SO-16: D max 10mm, E max 6.2mm, A max 1.75mm

Electrical Characteristics

SymbolParameterTest ConditionsMin.Typ.Max.UnitFig.
I CEXOutput Leakage CurrentV CE = 50V
T amb = 70°C, V CE = 50V
50
100
μA
μA
1a
1a
500
500
μ Α
μ Α
1b
1b
V CE(sat)Collector-emitter Saturation
Voltage
IC = 100 mA, IB = 250 μ A
IC = 200 mA, IB = 350 μ A
IC = 350 mA, IB = 500 μ A
0.9
1.1
1.3
1.1
1.3
1.6
V
V
V
2
2
2
l i(on)Input Current0.82
0.93
0.35
1
1.25
1.35
0.5
1.45
mA
mA
mA
mA
3
3
3
I i(off)Input CurrentTamb = 70°C, IC = 500μ A5065μΑ4
Vi(on)Input Voltage{c} VCE = 2V for ULN2002A IC = 300mA for ULN2003A IC = 200mA IC = 25mA IC = 300mA IC = 300mA for ULN2004A IC = 125mA IC = 200mA IC = 275mA IC = 350mA13
2.4
2.7
3
5
6
7
8
V5
h FEDC Forward Current Gainfor ULN2001A
V CE = 2V, I C = 350mA
10002
CiInput Capacitance1525pF
t PLHTurn-on Delay Time0.5 V i to 0.5 V o0.251μs
t PHLTurn-off Delay Time0.5 V i to 0.5 V o0.251μs
I RClamp Diode Leakage CurrentVR = 50V
Tamb = 70°C, VR = 50V
50
100
μA
μA
6
6
VFClamp Diode Forward VoltageIF = 350 mA1.72V7

TEST CIRCUITS

Figure 1a. Figure 1b.

Figure 4. Figure 5.

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Figure 8: Collector Current versus Input Current

Figure 9: Collector Current versus Saturation Voltage

Figure 10: Peak Collector Current versus Duty Cycle

Figure 11: Peak Collector Current versus Duty Cycle

DIM.mminch
MIN.TYP.MAX.MIN.
a10.510.020
B0.771.650.030
b0.5
b10.25
D20
E8.5
e2.54
e317.78
F7.1
I5.1
L3.3
Z1.27

OUTLINE AND MECHANICAL DATA

6/8

DIM.mminch
MIN.TYP.MAX.MIN.TYP.
A1.75
a10.10.250.004
a21.6
b0.350.460.014
b10.190.250.007
C0.50.020
c145˚ (typ.)
D (1)9.8100.386
E5.86.20.228
e1.270.050
e38.890.350
F (1)3.840.150
G4.65.30.181
L0.41.270.016
M0.62
S8˚(max.)

OUTLINE AND MECHANICAL DATA

(1) D and F do not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm (.006inch).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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Absolute Maximum Ratings

SymbolParameterValueUnit
VoOutput Voltage50V
VinInput Voltage (for ULN2002A/D - 2003A/D - 2004A/D)30V
IcContinuous Collector Current500mA
IbContinuous Base Current25mA
TambOperating Ambient Temperature Range– 20 to 85°C
TstgStorage Temperature Range– 55 to 150°C
TjJunction Temperature150°C

Thermal Information

SymbolParameterDIP16SO16Unit
Rth j-ambThermal Resistance Junction-ambient
Max.
70120°C/W

2/8

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
ULN2001ASTMicroelectronics16-DIP (0.300", 7.62mm)
ULN2001A/2002A/2003ASTMicroelectronics
ULN2001D/2002D/2003D/2004DSTMicroelectronics
ULN2003Aunknown
ULN2004ASTMicroelectronics
ULN200XSTMicroelectronics
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