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ULN2001A/2002A/2003A

Darlington Array

The ULN2001A/2002A/2003A is a darlington array from STMicroelectronics. View the full ULN2001A/2002A/2003A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

ULN2001A/2002A/2003A shares its datasheet with ULN2001A, whose page lists every part number it covers.

Official ULN2001A/2002A/2003A datasheet (PDF) — the source this page was extracted from.

ULN2001A/2002A/2003A Key Specifications

ParameterValue
Output Leakage Current (ICEX)50 mA (VCE = 50V, Tamb = 70 °C)
Collector-emitter Saturation Voltage (VCE(sat))0.9 V (Typ, IC = 100mA, IB = 250 μA)
Input Current (Ii(on))0.82 mA (Typ, for ULN2002A, Vi = 17V)
Input Voltage (Vi(on))2.4 V (Max, for ULN2003A, IC = 300mA)
DC Forward Current Gain (hFE)1000 (Min, for ULN2001A, VCE = 2V, IC = 350mA)
Input Capacitance (Ci)15 pF (Typ)
Turn-on Delay Time (tPLH)0.25 μs (Typ)
Clamp Diode Forward Voltage (VF)1.7 V (Typ, IF = 350mA)

ULN2001A/2002A/2003A Overview

Part: ULN2001A, ULN2002A, ULN2003A, ULN2004A — STMicroelectronics

Type: High Voltage, High Current Darlington Array

Description: A series of high voltage, high current darlington arrays, each containing seven open collector darlington pairs with common emitters, rated at 500mA per channel with integrated suppression diodes for inductive loads.

Operating Conditions:

  • Operating temperature: -20 to 85 °C

Absolute Maximum Ratings:

  • Max output voltage: 50 V
  • Max input voltage: 30 V (for ULN2002A/D - 2003A/D - 2004A/D)
  • Max continuous collector current: 500 mA
  • Max continuous base current: 25 mA
  • Max junction temperature: 150 °C
  • Max storage temperature: -55 to 150 °C

Key Specs:

  • Output Leakage Current (ICEX): 50 mA (VCE = 50V, Tamb = 70 °C)
  • Collector-emitter Saturation Voltage (VCE(sat)): 0.9 V (Typ, IC = 100mA, IB = 250 μA)
  • Input Current (Ii(on)): 0.82 mA (Typ, for ULN2002A, Vi = 17V)
  • Input Voltage (Vi(on)): 2.4 V (Max, for ULN2003A, IC = 300mA)
  • DC Forward Current Gain (hFE): 1000 (Min, for ULN2001A, VCE = 2V, IC = 350mA)
  • Input Capacitance (Ci): 15 pF (Typ)
  • Turn-on Delay Time (tPLH): 0.25 μs (Typ)
  • Clamp Diode Forward Voltage (VF): 1.7 V (Typ, IF = 350mA)

Features:

  • Seven darlingtons per package
  • Outputs can be paralleled for higher current
  • TTL/CMOS/PMOS/DTL compatible inputs
  • Inputs pinned opposite outputs to simplify layout
  • Integrated suppression diodes for inductive loads

Applications:

  • Solenoids
  • Relays
  • DC motors
  • LED displays
  • Filament lamps
  • Thermal printheads
  • High power buffers

Package:

  • 16 pin plastic DIP
  • SO-16 (Small Outline Package)

ULN2001A/2002A/2003A Electrical Characteristics

SymbolParameterTest ConditionsMin.Typ.Max.UnitFig.
I CEXOutput Leakage CurrentV CE = 50V T amb = 70 C, V CE = 50V T amb = 70 C for ULN2002A V CE = 50V, V i = 6V for ULN2004A V CE = 50V, V i = 1V50 100 500 500m A m A m A m A1a 1a 1b 1b
V CE(sat)Collector-emitter Saturation VoltageI C = 100mA, I B = 250 m A I C = 200 mA, I B = 350 m A I C = 350mA, I B = 500 m A0.9 1.1 1.31.1 1.3 1.6V V V2 2 2
I i(on)Input Currentfor ULN2002A, V i = 17V for ULN2003A, V i = 3.85V for ULN2004A, V i = 5V V i = 12V0.82 0.93 0.35 11.25 1.35 0.5 1.45mA mA mA mA3 3 3 3
I i(off)Input CurrentT amb = 70 C, I C = 500 m A5065m A4
V i(on)Input VoltageV CE = 2V for ULN2002A I C = 300mA for ULN2003A I C = 200mA I C = 250mA I C = 300mA for ULN2004A I C = 125mA I C = 200mA I C = 275mA I C = 350mA13 2.4 2.7 3 5 6 7 8V5
h FEDC Forward Current Gainfor ULN2001A V CE = 2V, I C = 350mA10002
C iInput Capacitance1525pF
t PLHTurn-on Delay Time0.5 V i to 0.5 V o0.251m s
t PHLTurn-off Delay Time0.5 V i to 0.5 V o0.251m s
I RClamp Diode Leakage CurrentV R = 50V T amb = 70 C, V R = 50V50 100m A m A6 6
V FClamp Diode Forward VoltageI F = 350mA1.72V7

ULN2001A/2002A/2003A Absolute Maximum Ratings

SymbolParameterValueUnit
V oOutput Voltage50V
V inInput Voltage (for ULN2002A/D - 2003A/D - 2004A/D)30V
I cContinuous Collector Current500mA
I bContinuous Base Current25mA
T ambOperating Ambient Temperature Range- 20 to 85C
T stgStorage Temperature Range- 55 to 150C
T jJunction Temperature150C

ULN2001A/2002A/2003A Thermal Information

SymbolParameterDIP16SO16Unit
R th j-ambThermal Resistance Junction-ambient70120C/W

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All Discrete Semiconductors datasheetsAll STMicroelectronics datasheets (808)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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