TPS56A37RPAR
TPS56A37 4.5V to 28V Input, 10A, Synchronous Buck Converter
Manufacturer
Texas Instruments
Category
Integrated Circuits (ICs)
Package
10-PowerVFQFN
Lifecycle
Active
Overview
Part: TPS56A37 from Texas Instruments
Type: Synchronous Buck Converter
Key Specs:
- Input voltage range: 4.5V to 28V
- Output voltage range: 0.6V to 13V
- Continuous output current: 10A
- Reference voltage: 0.6V ±1% at 25°C
- Quiescent current: 45uA
Features
- 4.5V to 28V input voltage range
- 0.6V to 13V output voltage range
- Supports 10A continuous output current
- Integrated 19.4mΩ and 8.5mΩ MOSFETs
- 0.6V ±1% reference voltage at 25°C
- 45uA low quiescent current
- D-CAP3™ control mode for fast transient response
- Eco-mode (auto-skip mode) for high light-load efficiency
- Fixed 500kHz switching frequency
- Cycle by cycle over current limit
- Adjustable soft-start time with default 1.8ms
- Built-in output discharge function
- Power-good indicator to monitor output voltage
- Supports up to 98% duty operation
- Non-latched protections for UV, OV, OT, and UVLO
- –40°C to +150°C operating junction temperature
- Small 10-pin 3.0mm × 3.0mm HotRod™ QFN package
- Pin-to-pin compatible with 6A TPS56637 and 8A TPS56837
Applications
Pin Configuration
Table 4-1. Pin Functions
| PIN | TYPE(1) | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| EN | 1 | I | Enable input control. Driving EN high or leaving this pin floating enables the converter. A resistor divider between this pin, VIN and AGND can be used to implement an external UVLO. |
| FB | 2 | I | Output feedback. Connect FB to the output voltage with a feedback resistor divider. |
| AGND | 3 | G | Ground of internal analog circuitry. Connect AGND to PGND plane at a single point. |
| PG | 4 | O | Open drain power-good indicator, this pin is asserted low if output voltage is out of PG threshold due to overvoltage, undervoltage, thermal shutdown, EN shutdown, or during soft start. |
| SS | 5 | O | Soft-start time selection pin. Connecting an external capacitor to AGND to set the soft-start time and if no external capacitor is connected, the soft-start time is 1.8ms by default. |
| SW | 6 | O | Switching node terminal. Connect the output inductor to this pin with wide and short tracks. |
| BOOT | 7 | I | Supply input for the gate drive voltage of the high-side MOSFET. Connect a 0.1µF bootstrap capacitor between BOOT and SW. |
| VIN | 8 | P | Input voltage supply pin. Drain terminal of high-side MOSFET. Connect the input decoupling capacitors between VIN and PGND. |
| PGND | 9 | G | Power GND terminal. Source terminal of low-side MOSFET. |
| MODE | 10 | I | Connect this pin with a 52.3K resistor to AGND. |
Electrical Characteristics
The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that do not degrade the parametric or functional specifications of the device for the life of the product containing it. Typical values correspond to TJ = 25°C, VIN = 24V. Minimum and maximum limits are based on TJ = –40°C to +150°C, VIN = 4.5V to 28V (unless otherwise noted).
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IQ | Quiescent current, Operating (1) | TJ = 25°C, VEN = 5V, VFB = 0.65V, non-switching | 45 | μA | ||
| ISHDNN | Shutdown supply current | TJ = 25°C, VEN = 0V | 3 | μA | ||
| UVLO | ||||||
| Wake up VIN voltage | 4.0 | 4.2 | 4.4 | V | ||
| VIN undervoltage lockout | Shutdown VIN voltage | 3.5 | 3.65 | 3.8 | V | |
| Hysteresis VIN voltage | 550 | mV | ||||
| ENABLE(EN PIN) | ||||||
| IEN_PULLUP | EN pullup current | VEN = 1.1V | 1 | μA | ||
| IEN_HYS | Hysteresis current | VEN = 1.3V | 3 | μA | ||
| VEN_ON | EN rising | 1.18 | 1.26 | V | ||
| VEN_OFF | Enable threshold | EN falling | 1 | 1.07 | V | |
| FEEDBACK VOLTAGE | ||||||
| VFB | Feedback voltage | VOUT = 5V, continuous mode operation, TJ = 25°C | 0.594 | 0.6 | 0.606 | V |
| VOUT = 5V, continuous mode operation, TJ = –40°C to 150°C | 0.591 | 0.6 | 0.609 | V | ||
| MOSFET | ||||||
| Rdson_HS | High-side MOSFET on-resistance | TJ = 25°C, VBST – VSW = 5V | 19.4 | mΩ | ||
| Rdson_LS | Low-side MOSFET on-resistance | TJ = 25°C | 8.5 | mΩ | ||
| CURRENT LIMIT | ||||||
| ILS_OCL | Low-side MOSFET valley current limit | 10 | 12 | 13.8 | A | |
| IHS_OCL | High-side MOSFET peak current limit | 12.75 | 15 | 17.25 | A |
Absolute Maximum Ratings
Over the recommended operating junction temperature range of –40°C to +150°C (unless otherwise noted)(1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | –0.3 | 32 | V | |
| BOOT | –0.3 | SW + 6 | V | |
| Input voltage | BOOT-SW | –0.3 | 6 | V |
| EN, FB, MODE | –0.3 | 6 | V | |
| PGND, AGND | –0.3 | 0.3 | V | |
| Output voltage | SW | –2 | 32 | V |
| SW (<10ns transient) | –5 | 35 | V | |
| PG, SS | –0.3 | 6 | V | |
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
Recommended Operating Conditions
Over the recommended operating junction temperature range of –40°C to 150°C (unless otherwise noted).(1)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| Input voltage | VIN | 4.5 | 28 | V | |
| BOOT | –0.1 | SW + 5.5 | V | ||
| BOOT-SW | –0.1 | 5.5 | V | ||
| EN, FB, SS, MODE | –0.1 | 5.5 | V | ||
| PGND, AGND | –0.1 | 0.1 | V | ||
| Output voltage | SW | –1 | 28 | V | |
| PG | –0.1 | 5.5 | V | ||
| Operating junction temperature, TJ | –40 | 150 | °C |
Thermal Information
| TPS56A37 | |||
|---|---|---|---|
| THERMAL METRIC(1) | QFN HotRod 10 PINS | UNIT | |
| RθJA | Junction-to-ambient thermal resistance (JEDEC)(2) | 68.1 | °C/W |
| Eff RθJA | Effective junction-to-ambient thermal resistance (4-layer TI EVM) | 30 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 40.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 17.6 | °C/W |
| ΨJT | Junction-to-top characterization parameter | 1.4 | °C/W |
| ΨJB | Junction-to-board characterization parameter | 17.2 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) This junction-to-ambient thermal resistance (JEDEC) is based on JEDEC standard EVM without GND thermal vias.
5.5 Electrical Characteristics
The electrical ratings specified in this section apply to all specifications in this document unless otherwise noted. These specifications are interpreted as conditions that do not degrade the parametric or functional specifications of the device for the life of the product containing it. Typical values correspond to TJ = 25°C, VIN = 24V. Minimum and maximum limits are based on TJ = –40°C to +150°C, VIN = 4.5V to 28V (unless otherwise noted).
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY CURRENT | ||||||
| IQ | Quiescent current, Operating (1) | TJ = 25°C, VEN = 5V, VFB = 0.65V, non-switching | 45 | μA | ||
| ISHDNN | Shutdown supply current | TJ = 25°C, VEN = 0V | 3 | μA | ||
| UVLO | ||||||
| Wake up VIN voltage | 4.0 | 4.2 | 4.4 | V | ||
| VIN undervoltage lockout | Shutdown VIN voltage | 3.5 | 3.65 | 3.8 | V | |
| Hysteresis VIN voltage | 550 | mV | ||||
| ENABLE(EN PIN) | ||||||
| IEN_PULLUP | EN pullup current | VEN = 1.1V | 1 | μA | ||
| IEN_HYS | Hysteresis current | VEN = 1.3V | 3 | μA | ||
| VEN_ON | EN rising | 1.18 | 1.26 | V | ||
| VEN_OFF | Enable threshold | EN falling | 1 | 1.07 | V | |
| FEEDBACK VOLTAGE | ||||||
| VFB | Feedback voltage | VOUT = 5V, continuous mode operation, TJ = 25°C | 0.594 | 0.6 | 0.606 | V |
| VOUT = 5V, continuous mode operation, TJ = –40°C to 150°C | 0.591 | 0.6 | 0.609 | V | ||
| MOSFET | ||||||
| Rdson_HS | High-side MOSFET on-resistance | TJ = 25°C, VBST – VSW = 5V | 19.4 | mΩ | ||
| Rdson_LS | Low-side MOSFET on-resistance | TJ = 25°C | 8.5 | mΩ | ||
| CURRENT LIMIT | ||||||
| ILS_OCL | Low-side MOSFET valley current limit | 10 | 12 | 13.8 | A | |
| IHS_OCL | High-side MOSFET peak current limit | 12.75 | 15 | 17.25 | A |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| TPS56A37 | Texas Instruments | — |
| TPS56A37RPAR.A | Texas Instruments | — |
Get structured datasheet data via API
Get started free