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TPS25940A

eFuse Power Switch

The TPS25940A is a efuse power switch from Texas Instruments. View the full TPS25940A datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

TPS25940A shares its datasheet with TPS25940, whose page lists every part number it covers.

Official TPS25940A datasheet (PDF) — the source this page was extracted from.

Manufacturer

Texas Instruments

Category

eFuse Power Switch

Package

WQFN-20 3.0x4.0mm

TPS25940A Key Specifications

ParameterValue
Accuracy±8%
Output Current5.3A
FunctionElectronic Fuse
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Package / Case20-WFQFN Exposed Pad
PackagingMouseReel
Standard Pack Qty3000
Supplier Device Package20-WQFN (4x3)
Input Voltage Range2.7V ~ 18V

TPS25940A Overview

Part: TPS25940A / TPS25940L (TPS25940ARVCR) — Texas Instruments

Type: eFuse Power Switch with True Reverse Current Blocking and DevSleep Support

Description: 2.7–18 V eFuse with 42 mΩ typical RON, 0.6–5.3 A adjustable current limit (±8%), true reverse current blocking and a 95 μA DevSleep mode for SSD/HDD power management.

Operating Conditions:

  • Supply voltage (IN): 2.7–18 V
  • Operating junction temperature: -40 to 125 °C
  • ILIM resistor range: 16.9–150 kΩ; minimum OUT capacitance 0.1 μF; maximum dVdT capacitance 470 nF

Absolute Maximum Ratings:

  • Max input voltage (IN, OUT, PGTH, PGOOD, EN/UVLO, OVP, DEVSLP, FLT): 20 V (22 V for 10 ms transient on IN)
  • Sink current (PGOOD, FLT, dVdT): 10 mA
  • Max junction temperature: 150 °C
  • Storage temperature: -65 to 150 °C
  • ESD: HBM ±2000 V, CDM ±500 V

Key Specs:

  • RON (IN to OUT): 42 mΩ typ; 26–64 mΩ over -40 to 125 °C (1 A ≤ I(OUT) ≤ 5 A)
  • Current limit: 4.45 A typ at R(ILIM) = 20 kΩ (4.09–4.81 A); 0.58 A typ at 150 kΩ; 5.2 A typ at 16.9 kΩ
  • Supply current, enabled: 199 μA typ at V(IN) = 12 V (140–260 μA)
  • Supply current, disabled: 15 μA typ at V(IN) = 12 V (max 20 μA)
  • DevSleep supply current: 95 μA typ (70–130 μA); DevSleep current limit 0.67 A typ
  • Internal UVLO rising threshold: 2.3 V typ (2.2–2.4 V), hysteresis 116 mV typ
  • EN/UVLO and OVP rising thresholds: 0.99 V typ (0.97–1.01 V)
  • IMON gain: 52.3 μA/A typ (1–5 A)
  • Reverse protection threshold V(IN)−V(OUT): -9.3 mV typ (falling)
  • dVdT charging current: 1 μA typ; dVdT-to-OUT gain 11.9 V/V typ
  • Fast-trip threshold: 1.5 × I(LIM) + 0.375 A

Features:

  • True reverse current blocking with 1 μs reverse voltage shutoff
  • IMON current monitor output (±8%)
  • Programmable dVo/dt output ramp control
  • Adjustable overvoltage and undervoltage thresholds (±2%)
  • PGOOD and FLT open-drain outputs
  • Open/short ILIM detection (UL60950 single point failure safe)
  • UL 2367 recognized (File No. 169910; R(ILIM) ≥ 20 kΩ, 4.81 A max)
  • TPS25940A is auto-retry; TPS25940L is latched

Applications:

  • PCIe/SATA/SAS HDD and SSD drives
  • Enterprise and micro servers
  • RAID cards, holdup power management
  • Set-top boxes, DTVs and game consoles
  • Telecom switches and routers
  • Adapter powered devices
  • Smart load switch

Package:

  • WQFN (20), RVC, 3.00 mm × 4.00 mm

TPS25940A Features

  • Precise current monitor output for health monitoring of the system
  • Additional power good comparator with precision internal reference for output or any other rail voltage monitoring
  • Over temperature protection to safely shutdown in the event of an overcurrent event
  • De-glitched fault reporting for brown-out and overvoltage faults
  • A choice of latched or automatic restart mode

TPS25940A Applications

  • PCIe/SATA/SAS HDD and SSD Drives

The TPS25940 eFuse Power Switch is a compact, feature rich power management device with a full suite of protection functions, including a low power DevSleep™ mode that supports compliance with the SATA™ Device Sleep standard. The wide operating range allows control of many popular DC bus voltages. Integrated back to back FETs provide bidirectional current control making the device well suited for systems with load side holdup energy that must not drain back to a failed supply bus.

Load, source and device protection are provided with many programmable features including overcurrent, dVo/dt ramp and overvoltage, undervoltage thresholds. For system status monitoring and downstream load control, the device provides PGOOD, FLT and precise current monitor output. Precise programmable undervoltage, overvoltage thresholds and the low IQ DevSleep mode simplify SSD power management design.

The TPS25940 monitors V(IN) and V(OUT) to provide true reverse current blocking when V(IN) < (V(OUT) - 10 mV). This function supports swift changeover to a boosted voltage energy storage element in systems where backup voltage is greater than bus voltage.

TPS25940A Pin Configuration

TPS25940 RVC PACKAGE (TOP VIEW)

TPS25940A Electrical Characteristics

Conditions are -40°C ≤ TJ=TA ≤ 125°C, 2.7 V ≤ V(IN) = 18 V, V(EN/UVLO) = 2 V, V(OVP) = V(DEVSLP) = V(PGTH) = 0 V, R(ILIM) = 150 k Ω , C(OUT) = 1 μF, C(dVdT) = OPEN, PGOOD = FLT = IMON = OPEN. Positive current into terminals. All voltages referenced to GND (unless otherwise noted)

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUTSUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUT
V (IN)Operating Input Voltage2.718V
V (UVR)Internal UVLO threshold, rising2.22.32.4V
V (UVRhys)Internal UVLO hysteresis105116125mV
V (EN/UVLO) = 2 V, V (IN) = 3 V140210300
I Q(ON)Supply current, EnabledV (EN/UVLO) = 2 V, V (IN) = 12 V140199260μA
V (EN/UVLO) = 2 V, V (IN) = 18 V140202270
V (EN/UVLO) = 0 V, V (IN) = 3 V48.615
I Q(OFF)Supply current, DisabledV (EN/UVLO) = 0 V, V (IN) = 12 V61520μA
V (EN/UVLO) = 0 V, V (IN) = 18 V818.525
I Q(DEVSLP)Supply current, DevSleep ModeV (DEVSLP) = 0 V, V (IN) = 2.7V to 18V7095130μA
ENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUTENABLE AND UNDERVOLTAGE LOCKOUT (EN/UVLO) INPUT
V (ENR)EN/UVLO threshold voltage, rising0.970.991.01V
V (ENF)EN/UVLO threshold voltage, falling0.90.920.94V
V (SHUTF)EN threshold voltage for Low I Q shutdown, falling0.30.470.63V
V (SHUTFhys)EN hysteresis for low I Q shutdown, hysteresis (1)66mV
I ENEN Input leakage current0 V ≤ V (EN/UVLO) ≤ 18 V-1000100nA
OVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUTOVER VOLTAGE PROTECTION (OVP) INPUT
V (OVPR)Overvoltage Threshold Voltage, Rising,0.970.991.01V
V (OVPF)Overvoltage Threshold Voltage, Falling0.90.920.94V
I (OVP)OVP Input Leakage Current0 V ≤ V (OVP) ≤ 5 V-1000100nA
DEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGHDEVSLP MODE INPUT (DEVSLP): ACTIVE HIGH
V (DEVSLPR)DEVSLP threshold voltage, rising1.61.852V
V (DEVSLPF)DEVSLP threshold voltage, falling0.80.961.1V
I (DEVSLP)DEVSLP input leakage current0.2 V ≤ V (DEVSLP) ≤ 18 V0.611.25μA
OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)OUTPUT RAMP CONTROL (dVdT)
I (dVdT)dVdT charging currentV (dVdT) = 0 V0.8511.15μA
R (dVdT)dVdT discharging resistanceEN/UVLO = 0 V, I (dVdT) = 10 mA sinking1624Ω
V (dVdTmax)dVdT maximum capacitor voltage2.62.883.1V
GAIN (dVdT)dVdT to OUT gainΔ V (OUT)/ Δ V (dVdT)11.6511.912.05V/V
CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)CURRENT LIMIT PROGRAMMING (ILIM)
V (ILIM)ILIM bias voltage0.87V
R (ILIM) = 150 k Ω , (V (IN) - V (OUT) ) = 1 V0.530.580.63
R (ILIM) = 88.7 k Ω , (V (IN) - V (OUT) ) = 1 V0.90.991.07
R (ILIM) = 42.2 k Ω , (V (IN) - V (OUT) ) = 1 V1.922.082.25
R (ILIM) = 24.9 k Ω , (V (IN) - V (OUT) ) = 1 V3.253.533.81
I (LIM)Current limit (2)R (ILIM) = 20 k Ω , (V (IN) - V (OUT) ) = 1 V4.094.454.81A
R (ILIM) = 16.9 k Ω , (V (IN) - V (OUT) ) = 1 V4.785.25.62
R (ILIM) = OPEN, Open resistor current limit (Single Point Failure Test: UL60950)0.350.450.55
R (ILIM) = SHORT, Shorted resistor current limit (Single Point Failure Test: UL60950)0.550.670.8
I (DEVSLP(LIM))DevSleep Mode Current Limit0.550.670.8A

TPS25940A Absolute Maximum Ratings

over operating temperature range (unless otherwise noted) (1)

VALUE - MINVALUE - MAXUNIT
Input voltage rangeIN, OUT, PGTH, PGOOD, EN/UVLO, OVP, DEVSLP, FLT-0.320V
Input voltage rangeIN (10 ms Transient)22V
Input voltage rangedVdT, ILIM-0.33.6V
Input voltage rangeIMON-0.37V
Sink currentPGOOD, FLT, dVdT10mA
Source currentdVdT, ILIM, IMONInternally LimitedInternally Limited
Maximum junction, T JMaximum junction, T J-40150°C
Storage temperature range, T stgStorage temperature range, T stg-65150°C
Continuous power dissipationContinuous power dissipationSee the Thermal Characteristics (2)See the Thermal Characteristics (2)See the Thermal Characteristics (2)

over operating free-air temperature range (unless otherwise noted)

MINNOMMAXUNIT
InputIN2.718V
InputEN/UVLO, OVP, DEVSLP, OUT, PGTH, PGOOD, FLT018V
InputdVdT, ILIM03V
InputIMON06V
ILIM16.9150k Ω
IMON1k Ω
ExternalOUT0.1μF
ExternaldVdT470nF
Operating junction temperature range, T JOperating junction temperature range, T J-4025125°C

TPS25940A Thermal Information

THERMAL METRICTHERMAL METRICTPS25940 RVC (20) PINSUNIT
R θ JAJunction-to-ambient thermal resistance38.1°C/W
R θ JCtopJunction-to-case (top) thermal resistance40.5°C/W
R θ JBJunction-to-board thermal resistance13.6°C/W
ψ JTJunction-to-top characterization parameter0.6°C/W
ψ JBJunction-to-board characterization parameter13.7°C/W
R θ JCbotJunction-to-case (bottom) thermal resistance3.4°C/W

TPS25940A Typical Application

The TPS25940 is a smart eFuse. It is typically used for Hot-Swap and Power rail protection applications. It operates from 2.7 V to 18 V with programmable current limit, overvoltage and undervoltage protection. The device aids in controlling the in-rush current and provides fast turn-off during reverse voltage conditions for systems such as Enterprise SSDs, HDDs, Servers, Power Back-up Storage units and RAID cards. The device also provides robust protection for multiple faults on the sub-system rail.

The following design procedure can be used to select component values for the device.

Alternatively, the WEBENCH® software may be used to generate a complete design. The WEBENCH® software uses an iterative design procedure and accesses a comprehensive database of components when generating a design. Additionally, a spreadsheet design tool TPS25940 Design Calculator is available on web folder.

This section presents a simplified discussion of the design process.

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
TPS25940Texas InstrumentsWQFN-20 3.0x4.0mm
TPS25940A/LTexas InstrumentsWQFN-20 3.0x4.0mm
TPS25940ARVCRTexas Instruments20-WFQFN Exposed Pad
TPS25940ARVCTTexas InstrumentsWQFN-20 3.0x4.0mm
TPS25940LTexas InstrumentsWQFN-20 3.0x4.0mm
TPS25940LRVCRTexas InstrumentsWQFN-20 3.0x4.0mm
TPS25940LRVCTTexas InstrumentsWQFN-20 3.0x4.0mm

More datasheets

All Texas Instruments datasheets (2,442)

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