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TLP785-GR-Y

Phototransistor Optocoupler (DIP4)

The TLP785-GR-Y is a phototransistor optocoupler (dip4) from Toshiba. View the full TLP785-GR-Y datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.

Official TLP785-GR-Y datasheet (PDF) — the source this page was extracted from.

Manufacturer

Toshiba

Category

Optocouplers

Package

DIP-4

TLP785-GR-Y Key Specifications

ParameterValue
Lead Pitch7.62 mm
Turn-On Time3 µs typ (VCC=10V, IC=2mA, RL=100Ω)
Turn-Off Time3 µs typ (VCC=10V, IC=2mA, RL=100Ω)
Forward Voltage1.15 V typ (IF=10mA)
Isolation Voltage5000 Vrms (min)
Creepage/Clearance7.0 mm min
Forward Current (Max)60 mA
Collector Current (Max)50 mA
Operating Temperature Range-55°C to 110°C (absolute max); -25°C to 85°C (recommended)
Supply Voltage (Recommended)up to 24 V
Collector-Emitter Voltage (VCEO)80 V (min)
Current Transfer Ratio (Rank GR)100% to 300% (IF=5mA, VCE=5V)
Collector-Emitter Saturation Voltage0.4 V max (IC=2.4mA, IF=8mA)

TLP785-GR-Y Overview

Part: TLP785, TLP785F — TOSHIBA

Type: Photocoupler

Description: A photocoupler consisting of a GaAs infrared emitting diode optically coupled to a silicone phototransistor, offering high isolation voltage of 5000 Vrms (min) and a collector-emitter voltage of 80 V (min).

Operating Conditions:

  • Supply voltage: 5–24 V
  • Forward current: 16–25 mA
  • Collector current: 1–10 mA
  • Operating temperature: -25 to 85 °C

Absolute Maximum Ratings:

  • Max supply voltage: 80 V (VCEO)
  • Max continuous current: 60 mA (IF)
  • Max junction/storage temperature: 125 °C (Tj)

Key Specs:

  • Forward voltage (VF): 1.0 V (min) to 1.3 V (max) at IF = 10 mA
  • Reverse current (IR): 10 μA (max) at VR = 5 V
  • Collector-emitter breakdown voltage (V(BR)CEO): 80 V (min) at IC = 0.5 mA
  • Collector dark current (ID(ICEO)): 0.1 μA (max) at VCE = 24 V, Ta = 25°C
  • Current transfer ratio (IC/IF): 50% (min) to 600% (max) at IF = 5 mA, VCE = 5 V
  • Collector-emitter saturation voltage (VCE(sat)): 0.4 V (max) at IC = 2.4 mA, IF = 8 mA
  • Isolation voltage (BVS): 5000 Vrms (min) (AC, 60 s)
  • Isolation resistance (RS): 1×10^12 Ω (min) at VS = 500 V

Features:

  • High isolation voltage: 5000 Vrms (min)
  • UL, c-UL, VDE (Option D4), CQC, SEMKO approved
  • Available in 7.62 mm pitch DIP4 (TLP785) and 10.16 mm pitch DIP4 (TLP785F)
  • Collector-emitter voltage: 80 V (min)
  • Current transfer ratio: 50% (min)

Applications:

  • Office Equipment
  • Household Appliances
  • Solid State Relays
  • Switching Power Supplies
  • Various Controllers Circuits
  • Signal Transmission between Different Voltage

Package:

  • DIP4 (7.62 mm pitch)
  • DIP4 (10.16 mm pitch, lead forming type)

TLP785-GR-Y Pin Configuration

TLP785-GR-Y Pinout

Package: DIP-4

Pin NumberPin NameTypeDescription
1AnodeILED anode (input)
2CathodeILED cathode (input)
3EmitterOTransistor emitter (output)
4CollectorOTransistor collector (output)

Notes

  • TLP785-GR-Y is a 4-pin DIP optocoupler with an integrated LED and phototransistor.
  • Pins 1–2 form the input (LED) side; pins 3–4 form the output (transistor) side.
  • Pin numbers extracted directly from the package diagram (top view).

TLP785-GR-Y Electrical Characteristics

CharacteristicCharacteristicSymbolTest ConditionMinTyp.MaxUnit
Forward voltageVFI F = 10 mA1.01.151.3V
Reverse currentI RVR = 5 V--10μ A
CapacitanceCTV = 0 V, f = 1 MHz-30-pF
Collector - emitter breakdown voltageV(BR) CEOI C = 0.5 mA80--V
Emitter - collector breakdown voltageV(BR) ECOI E = 0.1 mA7--V
Collector dark currentI D (I CEO )VCE = 24 V-0.010.1μ A
I D (I CEO )VCE = 24 V ,Ta = 85°C-0.650μ A
Capacitance (collector to emitter)CCEV = 0 V, f = 1 MHz-6-pF

TLP785-GR-Y Absolute Maximum Ratings

CharacteristicCharacteristicSymbolRatingUnit
Forward currentI F60mA
Forward current derating (Ta ≥ 39°C)ΔI F / °C- 0.7mA / °C
Pulse forward current (NoteI FP1A
Power dissipationPD90mW
Power dissipation derating (Ta ≥ 39°C)Δ PD / °C- 0.9mW / °C
Reverse voltageVR5V
Junction temperatureT j125°C
Collector - emitter voltageVCEO80V
Emitter - collector voltageVECO7V
Collector currentI C50mA
Power dissipation (single circuit)PC150mW
Power dissipation derating (Ta ≥ 25°C)Δ PC / °C- 1.5mW / °C
Junction temperatureT j125°C
Operating temperature rangeT opr- 55 to 110°C
Storage temperature rangeStorage temperature rangeT stg- 55 to 125°C
Lead soldering temperature (10 s)Lead soldering temperature (10 s)T sol260°C
Total package power dissipationTotal package power dissipationPT240mW
Total package power dissipation derating (Ta ≥ 25°C)Total package power dissipation derating (Ta ≥ 25°C)Δ PT / °C- 2.4mW / °C
Isolation voltage (Note 3)Isolation voltage (Note 3)BVS5000Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 2: 100 μ s pulse, 100 Hz frequency

Note 3: AC, 60 s., R.H. ≤ 60%. Apply voltage to LED pin and detector pin together.

CharacteristicSymbolMinTyp.MaxUnit
Supply voltageVCC-524V
Forward currentI F-1625mA
Collector currentI C-110mA
Operating temperatureT opr- 25-85°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

Other Optocouplers

  • EL357N – Everlight, Phototransistor Photocoupler
  • EL357N-G-TA – Everlight, Phototransistor Optocoupler
  • EL357NA – Everlight, Phototransistor Photocoupler
  • EL357NB – Everlight, Phototransistor Photocoupler
  • EL357NC – Everlight, Phototransistor Photocoupler
  • EL357ND – Everlight, Phototransistor Photocoupler
  • EL357NE – Everlight, Phototransistor Photocoupler
  • EL357NF – Everlight, Phototransistor Photocoupler

All Optocouplers datasheetsAll Toshiba datasheets (24)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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