TLP785-GR-Y
The TLP785-GR-Y is an electronic component. View the full TLP785-GR-Y datasheet below including electrical characteristics, absolute maximum ratings.
Overview
Part: TLP785, TLP785F — TOSHIBA
Type: Photocoupler
Description: A photocoupler consisting of a GaAs infrared emitting diode optically coupled to a silicone phototransistor, offering high isolation voltage of 5000 Vrms (min) and a collector-emitter voltage of 80 V (min).
Operating Conditions:
- Supply voltage: 5–24 V
- Forward current: 16–25 mA
- Collector current: 1–10 mA
- Operating temperature: -25 to 85 °C
Absolute Maximum Ratings:
- Max supply voltage: 80 V (VCEO)
- Max continuous current: 60 mA (IF)
- Max junction/storage temperature: 125 °C (Tj)
Key Specs:
- Forward voltage (VF): 1.0 V (min) to 1.3 V (max) at IF = 10 mA
- Reverse current (IR): 10 μA (max) at VR = 5 V
- Collector-emitter breakdown voltage (V(BR)CEO): 80 V (min) at IC = 0.5 mA
- Collector dark current (ID(ICEO)): 0.1 μA (max) at VCE = 24 V, Ta = 25°C
- Current transfer ratio (IC/IF): 50% (min) to 600% (max) at IF = 5 mA, VCE = 5 V
- Collector-emitter saturation voltage (VCE(sat)): 0.4 V (max) at IC = 2.4 mA, IF = 8 mA
- Isolation voltage (BVS): 5000 Vrms (min) (AC, 60 s)
- Isolation resistance (RS): 1×10^12 Ω (min) at VS = 500 V
Features:
- High isolation voltage: 5000 Vrms (min)
- UL, c-UL, VDE (Option D4), CQC, SEMKO approved
- Available in 7.62 mm pitch DIP4 (TLP785) and 10.16 mm pitch DIP4 (TLP785F)
- Collector-emitter voltage: 80 V (min)
- Current transfer ratio: 50% (min)
Applications:
- Office Equipment
- Household Appliances
- Solid State Relays
- Switching Power Supplies
- Various Controllers Circuits
- Signal Transmission between Different Voltage
Package:
- DIP4 (7.62 mm pitch)
- DIP4 (10.16 mm pitch, lead forming type)
Pin Configuration
4
3
Start of commercial production 2010-11
Electrical Characteristics
| Characteristic | Characteristic | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | I F = 10 mA | 1.0 | 1.15 | 1.3 | V | |
| Reverse current | I R | VR = 5 V | - | - | 10 | μ A | |
| Capacitance | CT | V = 0 V, f = 1 MHz | - | 30 | - | pF | |
| Collector - emitter breakdown voltage | V(BR) CEO | I C = 0.5 mA | 80 | - | - | V | |
| Emitter - collector breakdown voltage | V(BR) ECO | I E = 0.1 mA | 7 | - | - | V | |
| Collector dark current | I D (I CEO ) | VCE = 24 V | - | 0.01 | 0.1 | μ A | |
| I D (I CEO ) | VCE = 24 V ,Ta = 85°C | - | 0.6 | 50 | μ A | ||
| Capacitance (collector to emitter) | CCE | V = 0 V, f = 1 MHz | - | 6 | - | pF |
Absolute Maximum Ratings
| Characteristic | Characteristic | Symbol | Rating | Unit |
|---|---|---|---|---|
| Forward current | I F | 60 | mA | |
| Forward current derating (Ta ≥ 39°C) | ΔI F / °C | - 0.7 | mA / °C | |
| Pulse forward current (Note | I FP | 1 | A | |
| Power dissipation | PD | 90 | mW | |
| Power dissipation derating (Ta ≥ 39°C) | Δ PD / °C | - 0.9 | mW / °C | |
| Reverse voltage | VR | 5 | V | |
| Junction temperature | T j | 125 | °C | |
| Collector - emitter voltage | VCEO | 80 | V | |
| Emitter - collector voltage | VECO | 7 | V | |
| Collector current | I C | 50 | mA | |
| Power dissipation (single circuit) | PC | 150 | mW | |
| Power dissipation derating (Ta ≥ 25°C) | Δ PC / °C | - 1.5 | mW / °C | |
| Junction temperature | T j | 125 | °C | |
| Operating temperature range | T opr | - 55 to 110 | °C | |
| Storage temperature range | Storage temperature range | T stg | - 55 to 125 | °C |
| Lead soldering temperature (10 s) | Lead soldering temperature (10 s) | T sol | 260 | °C |
| Total package power dissipation | Total package power dissipation | PT | 240 | mW |
| Total package power dissipation derating (Ta ≥ 25°C) | Total package power dissipation derating (Ta ≥ 25°C) | Δ PT / °C | - 2.4 | mW / °C |
| Isolation voltage (Note 3) | Isolation voltage (Note 3) | BVS | 5000 | Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/'Derating Concept and Methods') and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 2: 100 μ s pulse, 100 Hz frequency
Note 3: AC, 60 s., R.H. ≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
| Characteristic | Symbol | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|
| Supply voltage | VCC | - | 5 | 24 | V |
| Forward current | I F | - | 16 | 25 | mA |
| Collector current | I C | - | 1 | 10 | mA |
| Operating temperature | T opr | - 25 | - | 85 | °C |
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
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