TDA2030

1 Device overview

Manufacturer

unknown

Overview

Part 1: Markdown Summary

Part: TDA2030

Type: Low Frequency Class-AB Audio Amplifier

Key Specs:

Supply Voltage: ±6 V to ±18 V (or 12 V to 36 V)
Output Power (Typical): 14 W (d=0.5%, 14V/4Ω)
Output Power (Guaranteed): 12 W (4Ω), 8 W (8Ω) at ±14V or 28V
Output Peak Current: 3.5 A
Typical Distortion: 0.2% (0.1 to 12 W, 4Ω), 0.1% (0.1 to 8 W, 8Ω)

Features:

Wide-range supply voltage, up to 36 V
Single or split power supply
Short-circuit protection to ground
Thermal shutdown
High output current
Very low harmonic and crossover distortion
Patented short-circuit protection system (limiting dissipated power)

Applications:

null

Package:

Pentawatt: No dimensions given
Pentawatt horizontal: No dimensions given

Features

Wide-range supply voltage, up to 36 V
Single or split power supply
Short-circuit protection to ground
Thermal shutdown

Applications

Figure 16. Typical amplifier with split power Figure 17. Typical amplifier with single power supply

Figure 18. PC board and component layout for Figure 19. a typical amplifier with split power supply

PC board and component layout for a typical amplifier with single power supply

8/17 Doc ID 1458 Rev 3

TDA2030 Applications

Figure 20. Bridge amplifier configuration with split power supply (Po = 28 W, Vs = ±14 V)

Practical considerations TDA2030

4 Practical considerations

4.1 Printed circuit board

The layout shown in Figure 19 should be adopted by the designers. If different layouts are used, the ground points of input 1 and input 2 must be well decoupled from the ground return of the output in which a high current flows.

4.2 Assembly suggestion

No electrical isolation is needed between the package and the heatsink with single supply voltage configuration.

4.3 Application suggestions

The recommended values of the components are those shown on application circuit of Figure 16. However, if different values are chosen, then the following table can be helpful.

Table 5. Variations from recommended values

Component	Recommanded value	Purpose	Larger than recommanded value	Smaller than recommanded value
R ₁	22 kΩ	Closed loop gain setting	Increase of gain	Decrease in gain ⁽¹⁾
R ₂	680 Ω	Closed loop gain setting	Decrease of gain ⁽¹⁾	Increase in gain
R ₃	22 kΩ	Non-inverting input biasing	Increase of input impedance	Decrease in input impedance
R ₄	1.Ω	Frequency stability	Danger of oscillation at high frequencies with inductive loads
R ₅	3 R ₂	Upper frequency cutoff	Poor high-frequency attenuation	Danger of oscillation
C ₁	1 µF	Input DC decoupling		Increase in low- frequency cutoff
$C_2$	22 µF	Inverting input DC decoupling		Increase in low- frequency cutoff
C ₃ C ₄	0.1 μF	Supply voltage bypass		Danger of oscillation
C ₅ C ₆	100 μF	Supply voltage bypass		Danger of oscillation
C ₇	0.22 μF	Frequency stability		Danger of oscillation
C ₈	1 2πBR ₁	Upper frequency cutoff	Smaller bandwidth	Larger bandwidth
D ₁ D ₂	1N4001	To protect the device against output voltage spikes
^1. Closed loop gain must be higher than 24 dB

TDA2030 Practical considerations

Table 6. Single supply application

Component	Recommanded value	Purpose	Larger than recommanded value	Smaller than recommanded value
R ₁	150 kΩ	Closed loop gain setting	Increase in gain	Decrease in gain ⁽¹⁾
R ₂	4.7 kΩ	Closed loop gain setting	Decrease in gain ⁽¹⁾	Increase in gain
R ₃	100 kΩ	Non-inverting input biasing	Increase of input impedance	Decrease in input Impedance
$R_4$	1 Ω	Frequency stability	Danger of oscillation at high frequencies with inductive loads
R _A /R _B	100 kΩ	Non-inverting input biasing	Poor high-frequency attenuation	Danger of oscillation
C ₁	1 µF	Input DC decoupling	- (C	Increase in low- frequency cutoff
C ₂	22 µF	Inverting DC decoupling	PI	Increase in low- frequency cutoff
C ₃	0.1 μF	Supply voltage bypass	10,10	Danger of oscillation
C ₅	100 μF	Supply voltage bypass	.0/	Danger of oscillation
C ₇	0.22 μF	Frequency stability	2	Danger of oscillation
C ₈	1 2πBR ₁	Upper frequency cutoff	Smaller bandwidth	Larger bandwidth
D ₁ D ₂	1N4001	To protect the device against	output voltage spikes.
^1. Closed loop gain must be higher than 24 dB

Electrical Characteristics

Refer to the test circuit in Figure 3; $V_S = \pm 14 \text{ V}$ , $T_{amb} = 25^{\circ}\text{C}$ unless otherwise specified.

Electrical characteristics Table 4.

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
v _s	Supply voltage		± 6 12		± 18 36	V
Id	Quiescent drain current			40	60	mA
I _b	Input bias current			0.2	2	μΑ
V _OS	Input offset voltage			± 2	± 20	mV
Ios	Input offset current	$V_s = \pm 18 \text{ (Vs = 36)}$		± 20	± 200	nA
Po	Output power	d = 0.5%, f = 40 to 15,000 Hz; $G_V$ = 30 dB $R_L$ = 4 $\Omega$ $R_L$ = 8 $\Omega$	12 8	14 9		W W
		d = 10%, f =1 kHz; $G_V$ = 30 dB $R_L$ = 4 $\Omega$ $R_L$ = 8 $\Omega$	12 8	14 9		W W

Table 4. Electrical characteristics (continued)

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Un
d	Distortion	$P_0 = 0.1 \text{ to } 12 \text{ W}, R_L = 4 \Omega,$ $G_V = 30 \text{ dB}$ f = 40 to 15.000 Hz		0.2	0.5	%
d	Distortion	$P_{o} = 0.1 \text{ to } 8 \text{ W}, R_{L} = 8 \Omega,$ $G_{V} = 30 \text{ dB}$ f = 40 to 15.000 Hz		0.1	0.5	%
B	Frequency response (–3 dB)	$P_o$ = 12 W, $R_L$ = 4 $\Omega$ ; $G_V$ = 30 dB	1	0 Hz to 1	40	H
R _i	Input resistance (pin 1)		0.5	5		M
$^{\rm G}{}_{\rm V}$	Voltage gain (open loop)			90	(	dE
$G_{V}$	Voltage gain (closed loop)	f = 1 kHz	29.5	30	30.5	dl
e _N	Input noise voltage	B = 22 Hz to 22 kHz		3	10	μ\
i _N	Input noise current	= D = 22 HZ 10 22 KHZ	2/	80	200	p
SVR	Supply voltage rejection	$G_V = 30 \text{ dB; } R_L = 4 \Omega, \ R_g = 22 \text{ k}\Omega, f_{ripple} = 100 \text{ Hz;} \ V_{ripple} = 0.5 \text{ Veff}$	40	50		dl
^l d	Drain current	$P_{o} = 14 \text{ W}, R_{L} = 4 \Omega$ $P_{o} = 9 \text{ W}, R_{L} = 8 \Omega$		900 500		m
Tј	Thermal shutdown junction temperature	.0			145	٥(
	temperature	51

Absolute Maximum Ratings

Table 2. Absolute maximum ratings

Symbol	Parameter		Value	Unit
$V_s$	Supply voltage		±18 (36)	٧
V _i	Input voltage		Vs
V _i	Differential input voltage		±15	V
l _o	Output peak current internally limited)		3.5	A
P _tot	Power dissipation at T _case = 90 °C		20	W
T _stg , T _j	Storage and junction temperature		-40 to 150	°C
2.2	Thermal data	let'	SPYOU
able 3.	Γhermal data
		100

Thermal Information

Table 3. Thermal data

Symbol	Parameter	Value	Unit
R _{th j-case}	Thermal resistance junction-case	max 3	C

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