TB6612FNG
Driver IC for Dual DC motorThe TB6612FNG is a driver ic for dual dc motor from Toshiba. View the full TB6612FNG datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Toshiba
Category
Driver IC for Dual DC motor
Overview
Part: Toshiba TB6612FNG
Type: Driver IC for Dual DC motor
Description: Dual DC motor driver with low ON-resistance (0.5 Ω Typ.), 1.2 A average output current, and integrated thermal shutdown.
Operating Conditions:
- Supply voltage: Vcc: 2.7–5.5 V, VM: 4.5–13.5 V
- Operating temperature: -20 to 85 °C
- Max switching frequency: 100 kHz
Absolute Maximum Ratings:
- Max supply voltage: VM = 15 V, Vcc = 6 V
- Max continuous current: 1.2 A (Per 1ch)
- Max junction/storage temperature: 150 °C
Key Specs:
- Output ON-resistance: 0.5 Ω (Typ. @Io=1A, Vcc=VM=5V)
- Supply current (Standby): 1 μA (Max, STBY=0V)
- Control input voltage (High): Vcc × 0.7 V (Min)
- Control input voltage (Low): Vcc × 0.3 V (Max)
- Low voltage detecting voltage: 1.9 V (Typ.)
- Thermal shutdown circuit operating temperature: 175 °C (Typ.)
- Output current (H-SW): 1 A (Max, VM ≥ 5V)
- Max switching frequency: 100 kHz
Features:
- Power supply voltage ； VM=15V （ Max. ）
- Output current ； Iout=1.2A(ave) / 3.2A (peak)
- Output low ON resistor ； 0.5 Ω (upper ＋ lower Typ. @VM ≧ 5V)
- Standby (Power save) system
- CW/CCW/short brake/stop function modes
- Built-in thermal shutdown circuit and low voltage detecting circuit
- Small faced package （ SSOP24 ： 0.65mm Lead pitch ）
- Response to Pb free packaging
Applications:
Package:
- SSOP24 (0.65mm Lead pitch)
Features
- Power supply voltage ; VM=15V ( Max. )
- Output current ; Iout=1.2A(ave) / 3.2A (peak)
- Output low ON resistor ; 0.5 Ω (upper + lower Typ. @VM ≧ 5V)
- Standby (Power save) system
- CW/CCW/short brake/stop function modes
- Built-in thermal shutdown circuit and low voltage detecting circuit
- Small faced package ( SSOP24 : 0.65mm Lead pitch )
- Response to Pb free packaging
- This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels.
The TB6612FNG is a Pb-free product. *Solderability
The following conditions apply to solderability: 1. Use of Sn-37Pb solder bath *solder bath temperature = 230°C *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245°C *dipping time = 5 seconds
質量 : 0.14 g ( 標準 )
Pin Configuration
| Pin NO. | Symbol | I/O | Remarks |
|---|---|---|---|
| 1 | AO1 | O | chA output1 |
| 2 | AO1 | O | chA output1 |
| 3 | PGND1 | ⎯ | Power GND 1 |
| 4 | PGND1 | ⎯ | Power GND 1 |
| 5 | AO2 | O | chA output2 |
| 6 | AO2 | O | chA output2 |
| 7 | BO2 | O | chB output2 |
| 8 | BO2 | O | chB output2 |
| 9 | PGND2 | ⎯ | Power GND 2 |
| 10 | PGND2 | ⎯ | Power GND 2 |
| 11 | BO1 | O | chB output1 |
| 12 | BO1 | O | chB output1 |
| 13 | VM2 | ⎯ | Motor supply(2.5V〜13.5V) |
| 14 | VM3 | ⎯ | Motor supply(2.5V〜13.5V) |
| 15 | PWMB | I | chB PWM input / 200kΩ pull-down at internal |
| 16 | BIN2 | I | chB input2 / 200kΩ pull-down at internal |
| 17 | BIN1 | I | chB input1 / 200kΩ pull-down at internal |
| 18 | GND | ⎯ | Small signal GND |
| 19 | STBY | I | 'L'=standby / 200kΩ pull-down at internal |
| 20 | Vcc | ⎯ | Small signal supply (2.7V〜5.5V) |
| 21 | AIN1 | I | chA input1 / 200kΩ pull-down at internal |
| 22 | AIN2 | I | chA input2 / 200kΩ pull-down at internal |
| 23 | PWMA | I | chA PWM input / 200kΩ pull-down at internal |
| 24 | VM1 | ⎯ | Motor supply(2.5V〜13.5V) |
Electrical Characteristics
| Characteristics | Symbol | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|---|
| Supply current | Icc(3V) | Icc(3V) | STBY=Vcc=3V, VM=5V | --- | 1.1 | (1.8) | mA |
| Supply current | Icc(5.5V) | Icc(5.5V) | STBY=Vcc=5.5V, VM=5V | --- | 1.5 | 2.2 | mA |
| Supply current | Icc(STB) | Icc(STB) | STBY=0V | --- | --- | 1 | μA |
| Supply current | IM(STB) | IM(STB) | STBY=0V | --- | --- | 1 | μA |
| Control input voltage | VIH | VIH | Vcc×0.7 | --- | Vcc+0.2 | V | |
| Control input voltage | VIL | VIL | -0.2 | --- | Vcc×0.3 | V | |
| Control input current | IIH | IIH | VIN=3V | 5 | 15 | 25 | μA |
| Control input current | IIL | IIL | VIN=0V | --- | --- | 1 | μA |
| Standby input voltage | VIH(STB) | VIH(STB) | Vcc×0.7 | --- | Vcc+0.2 | V | |
| Standby input voltage | VIL(STB) | VIL(STB) | -0.2 | --- | Vcc×0.3 | V | |
| Standby input current | IIH(STB) | IIH(STB) | VIN=3V | 5 | 15 | 25 | μA |
| Standby input current | IIL(STB) | IIL(STB) | VIN=0V | --- | --- | 1 | μA |
| Output saturating voltage | Vsat(U+L)1 | Vsat(U+L)1 | Io=1A,Vcc=VM=5V | --- | 0.5 | (0.7) | V |
| Output saturating voltage | Vsat(U+L)2 | Vsat(U+L)2 | Io=0.3A,Vcc=VM=5V | 0.15 | (0.21) | V | |
| Output leakage current | IL(U) | IL(U) | VM=Vout=15V | --- | --- | 1 | μA |
| Output leakage current | IL(L) | IL(L) | VM=15V,Vout=0V | -1 | --- | --- | μA |
| Regenerative diode VF | VF(U) | VF(U) | IF=1A | --- | 1 | 1.1 | V |
| Regenerative diode VF | VF(L) | VF(L) | IF=1A | --- | 1 | 1.1 | V |
| Low voltage detecting voltage | UVLD | UVLD | (Designed value) | --- | 1.9 | --- | V |
| Recovering voltage | UVLC | UVLC | (Designed value) | --- | 2.2 | --- | V |
| Response speed | tr | tr | (Designed value) | --- | 24 | --- | ns |
| Response speed | tf | tf | (Designed value) | --- | 41 | --- | ns |
| Dead | H to L | Penetration protect time (Designed value) | --- | (50) | --- | °C | |
| time | L to H | Penetration protect time (Designed value) | --- | (230) | --- | °C | |
| Thermal shutdown circuit operating temperature | TSD | TSD | (Designed value) | --- | 175 | --- | |
| Thermal shutdown hysteresis | △ TSD | △ TSD | (Designed value) | --- | 20 | --- |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit | Remarks |
|---|---|---|---|---|
| Supply voltage | VM | 15 | V | |
| Supply voltage | Vcc | 6 | V | |
| Input voltage | VIN | -0.2〜6 | V | IN1,IN2,STBY,PWM pins |
| Output voltage | Vout | 15 | V | O1,O2 pins |
| Output current | Iout | 1.2 | A | Per 1ch |
| Output current | Iout | 2 | A | tw=20ms Continuous pulse, Duty≦20% |
| Output current | (peak) | 3.2 | A | tw=10ms Single pulse |
| Power dissipation | PD | 0.78 | W | IC only |
| Power dissipation | 0.89 | W | 50×50 t=1.6(mm) Cu≧40% in PCB mounting | |
| Power dissipation | 1.36 | W | 76.2×114.3 t=1.6(mm) Cu≧30% in PCB monting | |
| Operating temperature | Topr | -20〜85 | °C | |
| Storage temperature | Tstg | -55〜150 | °C |
Thermal Information
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
- (2) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components.
- (3) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor's power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device's motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design.
Typical Application
Note: Condensers for noise absorption (C1, C2, C3, and C4) should be connected as close as possible to the IC.
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