STP4N150
N-channel Power MOSFETThe STP4N150 is a n-channel power mosfet from STMicroelectronics. View the full STP4N150 datasheet below including key specifications, electrical characteristics.
STP4N150 shares its datasheet with STW4N150, whose page lists every part number it covers.
Official STP4N150 datasheet (PDF) — the source this page was extracted from.
Manufacturer
STMicroelectronicsCategory
N-channel Power MOSFET
STP4N150 Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | TO-247 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 4 A |
| Continuous Drain Current | 4A (Tc) |
| Current Rating | 4 A |
| Drain to Source Breakdown Voltage | 1.5 kV |
| Drain to Source Resistance | 7 Ω |
| Drain to Source Voltage (Vds) | 1.5 kV |
| Drain-Source Voltage (Vdss) | 1500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Element Configuration | Single |
| Fall Time | 45 ns |
| FET Type | N-Channel |
| Gate Charge (Qg) | 50 nC @ 10 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Height | 24.45 mm |
| Input Capacitance | 1.3 nF |
| Input Capacitance (Ciss) | 1300 pF @ 25 V |
| Lead Free | Lead Free |
| Length | 15.75 mm |
| Lifecycle Status | Production (Last Updated: 1 month ago) |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 160 W |
| Min Breakdown Voltage | 1.5 kV |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Operating Temperature | 150°C (TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power Dissipation | 160 W |
| Power Dissipation (Max) | 160W (Tc) |
| Radiation Hardening | No |
| Rds(on) | 7Ohm @ 2A, 10V Ω |
| Rds On Max | 7 Ω |
| REACH SVHC | Affected |
| Resistance | 7 Ω |
| Rise Time | 30 ns |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Standard Pack Qty | 600 |
| Supplier Device Package | TO-247-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 35 ns |
| Vgs (Max) | ±30V |
| Gate Threshold Voltage | 5V @ 250µA |
| Voltage Rating (DC) | 1.5 kV |
| Width | 5.15 mm |
STP4N150 Overview
Part: STW4N150 (STFW4N150 / STP4N150 / STW4N150 family) — STMicroelectronics
Type: N-channel Power MOSFET (PowerMESH)
Description: 1500 V, 4 A N-channel PowerMESH Power MOSFET with 6 Ω typ. (7 Ω max.) RDS(on) at VGS = 10 V, available in TO-220, TO-247 and TO-3PF packages.
Operating Conditions:
- Supply voltage: not applicable
- Operating junction temperature: -55 to 150 °C
- Drain-source voltage up to 1500 V; gate-source voltage ±30 V
Absolute Maximum Ratings:
- Drain-source voltage (VDS): 1500 V
- Gate-source voltage (VGS): ±30 V
- Continuous drain current: 4 A at TC = 25 °C; 2.5 A at TC = 100 °C
- Pulsed drain current: 12 A
- Total power dissipation at TC = 25 °C: 160 W (TO-247, TO-220); 63 W (TO-3PF)
- Operating junction temperature: -55 to 150 °C
Key Specs:
- V(BR)DSS: 1500 V min. (VGS = 0 V, ID = 1 mA)
- RDS(on): 6 Ω typ., 7 Ω max. (VGS = 10 V, ID = 2 A)
- VGS(th): 3 / 4 / 5 V min/typ/max (VDS = VGS, ID = 250 μA)
- IDSS: 10 μA max. at 25 °C; 500 μA max. at TC = 125 °C (VDS = 1500 V, VGS = 0 V)
- IGSS: ±100 nA max. (VGS = ±30 V)
- Ciss / Coss / Crss: 1100 / 120 / 12 pF typ. (VDS = 25 V, f = 1 MHz)
- Qg: 29 nC typ., 50 nC max. (VDD = 600 V, ID = 4 A, VGS = 10 V)
- Switching: td(on) 34 ns, tr 31 ns, td(off) 47 ns, tf 45 ns typ. (VDD = 750 V, ID = 2 A, RG = 4.7 Ω)
- Body diode: VSD 2 V max. (ISD = 4 A); trr 520 ns typ. at 25 °C
- Avalanche: EAS 350 mJ (ID = 4 A, VDD = 50 V)
- RthJC: 0.78 °C/W (TO-220, TO-247); 2 °C/W (TO-3PF)
Features:
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package (3.5 kV RMS insulation withstand)
Applications:
- Switching applications
Package:
- TO-247 (STW4N150)
- TO-220 (STP4N150)
- TO-3PF (STFW4N150)
STP4N150 Features
- 100% avalanche tested
- Intrinsic capacitances and Q g minimized
- High speed switching
- Fully isolated TO-3PF plastic package
STP4N150 Electrical Characteristics
(T C = 25 °C unless otherwise specified)
Table 4. Static
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | V GS = 0 V, I D = 1 mA | 1500 | V | ||
| I DSS | Zero gate voltage drain current | V GS = 0 V, V DS = 1500 V V GS = 0 V, V DS = 1500 V, T C = 125 °C | 10 500 | μA | ||
| I GSS | Gate-body leakage current | V DS = 0 V, V GS = ±30 V | ±100 | nA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 250 μA | 3 | 4 | 5 | V |
| R DS(on) | Static drain-source on-resistance | V GS = 10 V, I D = 2 A | 6 | 7 | Ω |
Table 5. Dynamic
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| C iss | Input capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 1100 | pF | |
| C oss | Output capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 120 | pF | |
| C rss | Reverse transfer capacitance | V DS = 25 V, f = 1 MHz, V GS = 0 V | - | 12 | pF | |
| Q g | Total gate charge | V DD = 600 V, I D = 4 A, V GS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) | - | 29 | 50 (1) | nC |
| Q gs | Gate-source charge | V DD = 600 V, I D = 4 A, V GS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) | - | 8 | nC | |
| Q gd | Gate-drain charge | V DD = 600 V, I D = 4 A, V GS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) | - | 12 | nC |
Table 6. Switching times
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| t d(on) | Turn-on delay time | V DD = 750 V, I D = 2 A, | - | 34 | - | ns |
| t r | Rise time | R G = 4.7 Ω, V GS = 10 V | - | 31 | - | ns |
| t d(off) | Turn-off delay time | (see Figure 17. Test circuit for resistive load switching times and | - | 47 | - | ns |
| t f | Fall time | Figure 22. Switching time waveform) | - | 45 | - | ns |
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| I SD | Source-drain current | - | 4 | A | ||
| I SDM (1) | Source-drain current (pulsed) | - | 12 | A | ||
| V SD (2) | Forward on voltage | V GS = 0 V, I SD = 4 A | - | 2 | V | |
| t rr | Reverse recovery time | I SD = 4 A, di/dt = 100 A/μs, | - | 520 | ns | |
| Q rr | Reverse recovery charge | V DD = 45 V | - | 3.1 | μC | |
| I RRM | Reverse recovery current | (see Figure 19. Test circuit for inductive load switching and diode recovery times) | - | 12 | A | |
| t rr | Reverse recovery time | I SD = 4 A, di/dt = 100 A/μs, | - | 650 | ns | |
| Q rr | Reverse recovery charge | V DD = 45 V, T J = 150 °C | - | 4.1 | μC | |
| I RRM | Reverse recovery current | (see Figure 19. Test circuit for inductive load switching and diode recovery times) | - | 12.6 | A |
STP4N150 Package Information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Package information
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