STP12N120K5
N-channel Power MOSFETThe STP12N120K5 is a n-channel power mosfet from STMicroelectronics. View the full STP12N120K5 datasheet below including key specifications, electrical characteristics.
STP12N120K5 shares its datasheet with STW12N120K5, whose page lists every part number it covers.
Official STP12N120K5 datasheet (PDF) — the source this page was extracted from.
Manufacturer
STMicroelectronicsCategory
N-channel Power MOSFET
STP12N120K5 Key Specifications
| Parameter | Value |
|---|---|
| Case/Package | TO-247-3 |
| China RoHS | Non-Compliant |
| Continuous Drain Current (ID) | 12 A |
| Continuous Drain Current | 12A (Tc) |
| Drain to Source Breakdown Voltage | 1.2 kV |
| Drain to Source Resistance | 690 mΩ |
| Drain to Source Voltage (Vds) | 1.2 kV |
| Drain-Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 44.2 nC @ 10 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Height | 24.45 mm |
| Input Capacitance | 1.37 nF |
| Input Capacitance (Ciss) | 1370 pF @ 100 V |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 1 month ago) |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Breakdown Voltage | 1.2 kV |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Packaging | Rail/Tube |
| Power Dissipation | 250 W |
| Power Dissipation (Max) | 250W (Tc) |
| Radiation Hardening | No |
| Rds(on) | 690mOhm @ 6A, 10V Ω |
| Rds On Max | 690 mΩ |
| REACH SVHC | Affected |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Standard Pack Qty | 600 |
| Supplier Device Package | TO-247-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Turn-Off Delay Time | 68.5 ns |
| Turn-On Delay Time | 23 ns |
| Vgs (Max) | ±30V |
| Gate Threshold Voltage | 5V @ 100µA |
STP12N120K5 Overview
Part: STH12N120K5-2 / STP12N120K5 / STW12N120K5 / STWA12N120K5 — STMicroelectronics
Type: N-channel Power MOSFET (MDmesh K5)
Description: 1200 V, 12 A N-channel MDmesh K5 power MOSFET with 620 mΩ typ. (690 mΩ max.) RDS(on) and 44.2 nC typ. total gate charge, in H²PAK-2, TO-220, TO-247 and TO-247 long leads packages.
Operating Conditions:
- Drain-source voltage: up to 1200 V (V(BR)DSS min. at VGS = 0 V, ID = 1 mA)
- Operating junction temperature: -55 to 150 °C
- Gate drive: VGS = 10 V for the RDS(on) specification
Absolute Maximum Ratings:
- Gate-source voltage: ±30 V
- Continuous drain current: 12 A at TC = 25 °C; 7.6 A at TC = 100 °C
- Pulsed drain current: 48 A
- Total power dissipation: 250 W at TC = 25 °C
- Max junction/storage temperature: 150 °C (TJ and Tstg range -55 to 150 °C)
Key Specs:
- V(BR)DSS: 1200 V min. (VGS = 0 V, ID = 1 mA)
- RDS(on): 620 mΩ typ., 690 mΩ max. (VGS = 10 V, ID = 6 A)
- VGS(th): 3 / 4 / 5 V min./typ./max. (VDS = VGS, ID = 100 μA)
- IDSS: 1 μA max. at 25 °C; 50 μA max. at TC = 125 °C (VDS = 1200 V, VGS = 0 V)
- Ciss / Coss / Crss: 1370 / 110 / 0.6 pF typ. (VDS = 100 V, f = 1 kHz)
- Qg / Qgs / Qgd: 44.2 / 7.3 / 30 nC typ. (VDD = 960 V, ID = 12 A, VGS = 0 to 10 V)
- Switching (VDD = 600 V, ID = 6 A, RG = 4.7 Ω): td(on) 23 ns, tr 11 ns, td(off) 68.5 ns, tf 18.5 ns typ.
- Thermal resistance RthJC: 0.5 °C/W; single-pulse avalanche energy EAS: 215 mJ (IAR = 4 A)
Features:
- Very low figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications:
- Switching applications
Package:
- H²PAK-2 (STH12N120K5-2, tape and reel)
- TO-220 (STP12N120K5, tube)
- TO-247 (STW12N120K5, tube)
- TO-247 long leads (STWA12N120K5, tube)
STP12N120K5 Features
| Order codes | V DS | R DS(on) max. | I D |
|---|---|---|---|
| STH12N120K5-2 STP12N120K5 STW12N120K5 | 1200 V | 690 mΩ | 12 A |
- Very low FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
STP12N120K5 Electrical Characteristics
TC = 25 °C unless otherwise specified.
Table 4. On/off-states
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| V (BR)DSS | Drain-source breakdown voltage | V GS = 0 V, I D = 1 mA | 1200 | V | ||
| I DSS | Zero gate voltage drain current | V GS = 0 V, V DS = 1200 V V GS = 0 V, V DS = 1200 V, T C = 125 °C | 1 50 | μA | ||
| I GSS | Gate-body leakage current | V DS = 0 V, V GS = ±20 V | ±10 | μA | ||
| V GS(th) | Gate threshold voltage | V DS = V GS , I D = 100 μA | 3 | 4 | 5 | V |
| R DS(on) | Static drain-source on-resistance | V GS = 10 V, I D = 6 A | 620 | 690 | mΩ |
Table 5. Dynamic characteristics
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| C iss | Input capacitance | V DS = 100 V, f = 1 kHz, V GS = 0 V | - | 1370 | - | pF |
| C oss | Output capacitance | V DS = 100 V, f = 1 kHz, V GS = 0 V | - | 110 | - | pF |
| C rss | Reverse transfer capacitance | V DS = 100 V, f = 1 kHz, V GS = 0 V | - | 0.6 | - | pF |
| C o(tr) (1) | Equivalent capacitance, time- related | V DS = 0 to 960 V, V GS = 0 V | - | 128 | - | pF |
| C o(er) (2) | Equivalent capacitance, energy- related | V DS = 0 to 960 V, V GS = 0 V | - | 42 | - | pF |
| R g | Intrinsic gate resistance | f = 1 MHz, I D = 0 A | - | 3 | - | Ω |
| Q g | Total gate charge | V DD = 960 V, I D = 12 A, V GS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) | - | 44.2 | - | nC |
| Q gs | Gate-source charge | V DD = 960 V, I D = 12 A, V GS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) | - | 7.3 | - | nC |
| Q gd | Gate-drain charge | V DD = 960 V, I D = 12 A, V GS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) | - | 30 | - | nC |
Table 6. Switching times
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| t d(on) | Turn-on delay time | V DD = 600 V, I D = 6 A, | - | 23 | - | ns |
| t r | Rise time | R G = 4.7 Ω , V GS = 10 V | - | 11 | - | ns |
| t d(off) | Turn-off delay time | (see Figure 15. Test circuit for resistive load switching times and | - | 68.5 | - | ns |
| t f | Fall time | Figure 20. Switching time waveform) | - | 18.5 | - | ns |
Table 6. Switching times
STP12N120K5 Package Information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| STH12N120K5-2 | STMicroelectronics | — |
| STW12N120K5 | STMicroelectronics | TO-247-3 |
| STWA12N120K5 | STMicroelectronics | — |
| STX12N120K5 | STMicroelectronics | — |
More datasheets
Ask your AI agent about the STP12N120K5
Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.
claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp
Then ask: "Can the STP12N120K5 run from my 12 V rail? Check it against the datasheet limits."
Create a free account $2 of usage every month, no card needed.