SI7157DP-T1-GE3

Part: Si7157DP — Vishay Siliconix

Type: P-Channel Power MOSFET

Description: 20 V P-Channel TrenchFET Gen III power MOSFET with a continuous drain current up to -60 A (T_C = 25 °C) and on-state resistance as low as 0.00125 Ω at V_GS = -10 V.

Operating Conditions:

• Gate-source voltage: ± 12 V
• Operating junction and storage temperature: -55 to +150 °C
• Soldering peak temperature: 260 °C

Absolute Maximum Ratings:

• Max drain-source voltage: -20 V
• Max continuous drain current: -60 A (T_C = 25 °C)
• Max junction/storage temperature: +150 °C

Key Specs:

• Drain-source breakdown voltage (V_DS): -20 V (V_GS = 0 V, I_D = -250 μA)
• Gate-source threshold voltage (V_GS(th)): -0.5 V to -1.4 V (V_DS = V_GS, I_D = -250 μA)
• Drain-source on-state resistance (R_DS(on)): 0.00125 Ω typ. (V_GS = -10 V, I_D = -25 A)
• Drain-source on-state resistance (R_DS(on)): 0.00155 Ω typ. (V_GS = -4.5 V, I_D = -20 A)
• Total gate charge (Q_g): 415 nC typ. (V_DS = -10 V, V_GS = -10 V, I_D = 20 A)
• Input capacitance (C_iss): 22 000 pF typ. (V_DS = -10 V, V_GS = 0 V, f = 1 MHz)
• Continuous source-drain diode current (I_S): -60 A (T_C = 25 °C)
• Maximum power dissipation (P_D): 104 W (T_C = 25 °C)

Features:

• TrenchFET Gen III P-Channel power MOSFET
• 100 % Rg and UIS tested
• Material categorization: Lead (Pb)-free and halogen-free

Applications:

• Mobile computing
• Adaptor switch
• Battery switch
• Load switch
• Power management

Package:

• PowerPAK SO-8 (Single/Dual)

• TrenchFET ® Gen III P-Channel power MOSFET
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

• For mobile computing

• Adaptor switch

• Battery switch

• Load switch

• Power management

P-Channel MOSFET

P-Channel MOSFET

• Package
• Lead (Pb)-free and halogen-free

Because of the common footprint, a PowerPAK SO-8 can be mounted on an existing standard SO-8 pad pattern. The question then arises as to the thermal performance of the PowerPAK device under these conditions. A characterization was made comparing a standard SO-8 and a PowerPAK device on a board with a trough cut out underneath the PowerPAK drain pad. This configuration restricted the heat flow to the SO-8 land pads. The results are shown in figure 5.

Si4874DY v s. Si7446DP PPAK on a 4-Layer Board SO-8 Pattern, Tro u gh Under Drain

Revision: 16-Mai-13

Because of the presence of the trough, this result suggests a minimum performance improvement of 10 °C/W by using a PowerPAK SO-8 in a standard SO-8 PC board mount.

The only concern when mounting a PowerPAK on a standard SO-8 pad pattern is that there should be no traces running between the body of the MOSFET. Where the standard SO-8 body is spaced away from the pc board, allowing traces to run underneath, the PowerPAK sits directly on the pc board.