Skip to main content

RVT1E100M0405

The RVT1E100M0405 is an electronic component from Roqang. View the full RVT1E100M0405 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Roqang

Category

Aluminum Electrolytic Capacitors

Overview

Part: NCV8705

Type: Linear Voltage Regulator (LDO)

Description: A 500 mA, ultra-low quiescent current (13 μA typ), ultra-low noise (12 mVrms), and high PSRR (71 dB at 1 kHz) linear voltage regulator.

Operating Conditions:

  • Supply voltage: 2.5 V to 5.5 V
  • Operating temperature: -40 to +125 °C
  • Output voltage range: 0.8 V to 5.5 V - V DO (Adjustable)

Absolute Maximum Ratings:

  • Max supply voltage: 6 V
  • Max junction temperature: 125 °C

Key Specs:

  • Operating Input Voltage: 2.5 V to 5.5 V
  • Output Current Limit: 510 mA min, 750 mA typ, 950 mA max (V OUT = 90% V OUT(nom))
  • Quiescent Current: 13 μA typ, 25 μA max (I OUT = 0 mA)
  • Dropout Voltage: 230 mV typ, 350 mV max (I OUT = 500 mA, V OUT(nom) = 2.8 V)
  • Output Voltage Accuracy: ±2% (V OUT + 0.5 V ≤ V IN ≤ 5.5 V, I OUT = 0 - 500 mA)
  • Power Supply Rejection Ratio (PSRR): 71 dB typ (V IN = 3.8 V, V OUT = 2.8 V (Fixed), I OUT = 500 mA, f = 1 kHz)
  • Output Noise Voltage: 12 mV rms typ (V OUT = 2.5 V (Fixed), V IN = 3.5 V, I OUT = 500 mA, f = 100 Hz to 100 kHz)
  • Shutdown Current: 0.12 μA typ (V EN ≤ 0.4 V, T J = +25 °C)

Features:

  • Fixed Voltage Option: 0.8 V to 3.5 V
  • Adjustable Voltage Option: 0.8 V to 5.5 V
  • Ultra-Low Quiescent Current of Typ. 13 μA
  • Ultra-Low Noise: 12 mV RMS from 100 Hz to 100 kHz
  • ±2% Accuracy Over Load/Line/Temperature
  • Very Low Dropout: 230 mV Typical at 500 mA
  • High PSRR: 71 dB at 1 kHz
  • Thermal Shutdown and Current Limit Protections
  • Internal Soft-Start to Limit the Turn-On Inrush Current
  • Stable with a 1 μF Ceramic Output Capacitor
  • Wettable Flank Package Option Available
  • Active Output Discharge for Fast Turn-Off
  • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q100 Qualified and PPAP Capable
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Applications:

  • General Purpose Automotive & Industrial
  • ADAS, Infotainment & Cluster, and Telematics
  • Building & Factory Automation, Smart Meters

Package:

  • WDFN6 (2x2 mm)
  • DFN8 (3x3 mm)
  • DFNW8 (3x3 mm)

Features

  • Available -Fixed Voltage Option: 0.8 V to 3.5 V Available -Adjustable Voltage Option: 0.8 V to 5.5 V -
  • Ultra -Low Quiescent Current of Typ. 13 m A
  • Operating Input Voltage Range: 2.5 V to 5.5 V
  • Reference Voltage 0.8 V
  • VDROP
  • Ultra -Low Noise: 12 m VRMS from 100 Hz to 100 kHz
  • ± 2% Accuracy Over Load/Line/Temperature
  • Very Low Dropout: 230 mV Typical at 500 mA
  • High PSRR: 71 dB at 1 kHz
  • Thermal Shutdown and Current Limit Protections
  • Internal Soft -Start to Limit the Turn -On Inrush Current
  • Stable with a 1 m F Ceramic Output Capacitor
  • Wettable Flank Package Option Available
  • Active Output Discharge for Fast Turn -Off
  • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

Figure 64. Capacitance Change vs. DC Bias

Electrical Characteristics

-40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 0.5 V or 2.5 V, whichever is greater; V EN = 0.9 V, I OUT = 10 mA, C IN = C OUT = 1 m F unless otherwise noted. Typical values are at T J = +25 ° C. (Note 4)

ParameterTest ConditionsTest ConditionsSymbolMinTypMaxUnit
Operating Input VoltageV IN2.55.5V
Output Voltage Range (Adjustable)V OUT0.85.5 - V DOV
Undervoltage Lock - outV IN risingV IN risingUVLO1.21.61.9V
Output Voltage AccuracyV OUT + 0.5 V ≤ V IN ≤ 5.5 V, I OUT = 0 - 500 mAV OUT + 0.5 V ≤ V IN ≤ 5.5 V, I OUT = 0 - 500 mAV OUT- 2+2%
Reference VoltageV REF0.8V
Reference Voltage AccuracyI OUT = 10 mAI OUT = 10 mAV REF- 2+2%
Line RegulationV OUT + 0.5 V ≤ V IN ≤ 4.5 V, I OUT = 10 mA V OUT + 0.5 V ≤ V IN ≤ 5.5 V, I OUT = 10 mAV OUT + 0.5 V ≤ V IN ≤ 4.5 V, I OUT = 10 mA V OUT + 0.5 V ≤ V IN ≤ 5.5 V, I OUT = 10 mAReg LINE550 750m V/V
Load RegulationI OUT = 0 mA to 500 mAI OUT = 0 mA to 500 mAReg LOAD12m V/mA
Load TransientI OUT = 1 mA to 500 mA or 500 mA to 1 mA in 1 m s, C OUT = 1 m FI OUT = 1 mA to 500 mA or 500 mA to 1 mA in 1 m s, C OUT = 1 m FTran LOAD± 120mV
Dropout Voltage (Note 5)I OUT = 500 mA, V OUT(nom) = 2.8 VI OUT = 500 mA, V OUT(nom) = 2.8 VV DO230350mV
Output Current LimitV OUT = 90% V OUT(nom)V OUT = 90% V OUT(nom)I CL510750950mA
Quiescent CurrentI OUT = 0 mAI OUT = 0 mAI Q1325m A
Ground CurrentI OUT = 500 mAI OUT = 500 mAI GND260m A
Shutdown CurrentV EN ≤ 0.4 V, T J = +25 ° CV EN ≤ 0.4 V, T J = +25 ° CI DIS0.12m A
V EN ≤ 0 V, V IN = 2.0 to 4.5 V, T J = - 40 to +85 ° CV EN ≤ 0 V, V IN = 2.0 to 4.5 V, T J = - 40 to +85 ° CI DIS0.552m A
EN Pin Threshold Voltage High Threshold Low ThresholdV EN Voltage increasing V EN Voltage decreasingV EN Voltage increasing V EN Voltage decreasingV EN_HI V EN_LO0.90.4V
EN Pin Input CurrentV EN = 5.5 VV EN = 5.5 VI EN100500nA
ADJ Pin CurrentV ADJ = 0.8 VV ADJ = 0.8 V1nA
Turn - On TimeC OUT = 1.0 m F, from assertion EN pin to 98% V OUT(nom)C OUT = 1.0 m F, from assertion EN pin to 98% V OUT(nom)t ON150m s
Power Supply Rejection RatioV IN = 3.8 V, V OUT = 2.8 V (Fixed), I OUT = 500 mAf = 100 Hz f = 1 kHz f = 10 kHzPSRR73 71 56dB
Output Noise VoltageV OUT = 2.5 V (Fixed), V IN = 3.5 V, I OUT = 500 mA f = 100 Hz to 100 kHzV OUT = 2.5 V (Fixed), V IN = 3.5 V, I OUT = 500 mA f = 100 Hz to 100 kHzV N12m V rms
Thermal Shutdown TemperatureTemperature increasing from T J = +25 ° CTemperature increasing from T J = +25 ° CT SD160° C
Thermal Shutdown HysteresisTemperature falling from T SDTemperature falling from T SDT SDH-20-° C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T J = T A = 25 _ C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

  2. Characterized when V OUT falls 100 mV below the regulated voltage at V IN = V OUT(NOM) + 0.5 V.

I OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
10 mA19.0618.21
100 mA15.9915.04
300 mA14.4213.39
500 mA13.7012.60

Figure 3. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 1 m F

I OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
10 mA16.1715.28
100 mA16.4115.65
300 mA14.9414.10
500 mA14.0813.11

Figure 4. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 10 m F

I OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
10 mA18.1215.39
100 mA16.4213.50
300 mA16.3512.47
500 mA16.0012.10

Figure 5. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 1 m F

I OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
1 mA17.3514.07
100 mA17.4314.29
300 mA16.5513.33
500 mA16.4813.20

Figure 6. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 10 m F

V OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
V OUT10 Hz - 100 kHz100 Hz - 100 kHz
1.5 V31.4030.33
3.3 V49.1444.30

Figure 7. Output Voltage Noise Spectral Density for Adjustable Version - Different Output Voltage

I OUTRMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
none50.1743.85
100 pF46.9040.39
1 nF36.9227.99
10 nF27.0218.31

Figure 8. Output Voltage Noise Spectral Density for Adjustable Version for Various C1

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 21. Output Voltage vs. Temperature, (3.3 V)

Figure 21. Output Voltage vs. Temperature, (3.3 V)

Figure 23. Line Regulation vs. Temperature, (3.3 V)

Figure 25. Load Regulation vs. Temperature, (3.3 V)

Figure 22. Line Regulation vs. Temperature, (1.8 V)

REGLOAD, LOAD REGULATION ( m V/mA)

Figure 24. Load Regulation vs. Temperature, (1.8 V)

Figure 26. Disable Current vs. Temperature

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 27. Enable Current vs. Temperature

Figure 27. Enable Current vs. Temperature

Figure 29. Short -Circuit vs. Temperature

Figure 31. Enable Threshold (High)

Figure 28. Current Limit vs. Temperature

Figure 30. Short -Circuit Current vs. Temperature

Figure 32. Enable Threshold (Low)

)

Figure 37. Power Supply Rejection Ratio, VOUT = 3.3 V

Figure 38. Power Supply Rejection Ratio, VOUT = 3.3 V, I OUT = 10 mA -Different C OUT

Figure 44. Enable Turn -on Response, COUT = 10 m F, I OUT = 10 mA

Figure 44. Enable Turn -on Response, COUT = 10 m F, I OUT = 10 mA

Figure 46. Line Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 48. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 45. Enable Turn -on Response, COUT = 10 m F, I OUT = 500 mA

Figure 47. Line Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 49. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 50. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 50. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 54. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

10

m

s/div

Figure 51. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 53. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 51. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 55. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 55. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 60. Turn -on/off, Slow Rising V IN

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 57. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 60. Turn -on/off, Slow Rising V IN

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 57. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 62. Short -Circuit Current Peak

Figure 63. Enable Turn -off

Absolute Maximum Ratings

RatingSymbolValueUnit
Input Voltage (Note 1)V IN- 0.3 V to 6 VV
Output VoltageV OUT- 0.3 V to V IN + 0.3 VV
Enable InputV EN- 0.3 V to V IN + 0.3 VV
Adjustable InputV ADJ- 0.3 V to V IN + 0.3 VV
Output Short Circuit Durationt SCIndefinites
Maximum Junction TemperatureT J(MAX)125° C
Storage TemperatureT STG- 55 to 150° C
ESD Capability, Human Body Model (Note 2)ESD HBM2000V
ESD Capability, Machine Model (Note 2)ESD MM200V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

  2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC -Q100 -002 (EIA/JESD22 -A114)

ESD Machine Model tested per AEC -Q100 -003 (EIA/JESD22 -A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

Table 3. THERMAL CHARACTERISTICS (Note 3)

RatingSymbolValueUnit
Thermal Characteristics, WDFN6 2x2 mm Thermal Resistance, Junction - to - Air Thermal Resistance Parameter, Junction - to - Boardq JA Y JB116.5 30° C/W
Thermal Characteristics, DFN8 3x3 mm / DFNW8 3x3 mm Thermal Resistance, Junction - to - Air Thermal Resistance Parameter, Junction - to - Boardq JA Y JB92.6 35.1° C/W

Thermal Information

When the die temperature exceeds the Thermal Shutdown threshold (T SD -160 ° C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU -140 ° C typical). Once the IC temperature falls below the 140 ° C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
NCV8705onsemi (implied by NCV prefix)
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free