RVT1E100M0405

Part: NCV8705 (datasheet file RVT1E100M0405) — ON Semiconductor / onsemi

Type: Low-Dropout (LDO) Linear Voltage Regulator

Description: 2.5–5.5 V input, 500 mA ultra-low-noise LDO regulator with 13 μA typical quiescent current, 230 mV typical dropout at 500 mA, and fixed (0.8–3.5 V) or adjustable (0.8–5.5 V) output options.

Operating Conditions:

• Supply voltage: 2.5–5.5 V
• Operating junction temperature: -40 to 125 °C
• Output voltage range (adjustable): 0.8 V to 5.5 V − VDO
• Output current: up to 500 mA with a 1 μF ceramic output capacitor

Absolute Maximum Ratings:

• Max input voltage (VIN): 6 V (-0.3 V to 6 V)
• Output / Enable / ADJ voltage: -0.3 V to VIN + 0.3 V
• Output short-circuit duration: indefinite
• Max junction temperature: 125 °C
• Storage temperature: -55 to 150 °C
• ESD: HBM 2000 V, MM 200 V

Key Specs:

• Output voltage accuracy: ±2% (VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 0–500 mA)
• Dropout voltage: 230 mV typ, 350 mV max (IOUT = 500 mA, VOUT(nom) = 2.8 V)
• Quiescent current: 13 μA typ, 25 μA max (IOUT = 0 mA)
• Output current limit: 510 mA min, 750 mA typ, 950 mA max (VOUT = 90% VOUT(nom))
• PSRR: 73 dB at 100 Hz, 71 dB at 1 kHz, 56 dB at 10 kHz (VIN = 3.8 V, VOUT = 2.8 V, IOUT = 500 mA)
• Output noise: 12 μVrms (100 Hz–100 kHz, VOUT = 2.5 V, IOUT = 500 mA)
• UVLO (VIN rising): 1.2 V min, 1.6 V typ, 1.9 V max
• Enable thresholds: 0.9 V high (min), 0.4 V low (max); turn-on time 150 μs typ
• Thermal shutdown: 160 °C typ, 20 °C hysteresis

Features:

• Fixed output options 0.8–3.5 V and adjustable option 0.8–5.5 V
• Reference voltage 0.8 V
• Adaptive Ground Current circuit for low ground current at light load
• Thermal shutdown and current limit protection
• Internal soft-start to limit inrush current
• Active output discharge for fast turn-off
• Stable with 1 μF ceramic output capacitor
• Wettable flank package option available
• AEC-Q100 qualified and PPAP capable (NCV prefix)
• Pb-free, halogen free/BFR free, RoHS compliant

Applications:

• General purpose automotive and industrial
• ADAS, infotainment, cluster, and telematics
• Building and factory automation, smart meters
• RF receivers, imaging sensors, audio processors

Package:

• WDFN6, 2x2 mm (Case 511BR); RθJA 116.5 °C/W
• DFN8, 3x3 mm (Case 506DB); RθJA 92.6 °C/W
• DFNW8, 3x3 mm, wettable flank (Case 507AD); RθJA 92.6 °C/W

• Available -Fixed Voltage Option: 0.8 V to 3.5 V Available -Adjustable Voltage Option: 0.8 V to 5.5 V -
• Ultra -Low Quiescent Current of Typ. 13 m A
• Operating Input Voltage Range: 2.5 V to 5.5 V
• Reference Voltage 0.8 V
• VDROP
• Ultra -Low Noise: 12 m VRMS from 100 Hz to 100 kHz
• ± 2% Accuracy Over Load/Line/Temperature
• Very Low Dropout: 230 mV Typical at 500 mA
• High PSRR: 71 dB at 1 kHz
• Thermal Shutdown and Current Limit Protections
• Internal Soft -Start to Limit the Turn -On Inrush Current
• Stable with a 1 m F Ceramic Output Capacitor
• Wettable Flank Package Option Available
• Active Output Discharge for Fast Turn -Off
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable
• These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

Figure 64. Capacitance Change vs. DC Bias

-40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 0.5 V or 2.5 V, whichever is greater; V EN = 0.9 V, I OUT = 10 mA, C IN = C OUT = 1 m F unless otherwise noted. Typical values are at T J = +25 ° C. (Note 4)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T J = T A = 25 _ C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

2. Characterized when V OUT falls 100 mV below the regulated voltage at V IN = V OUT(NOM) + 0.5 V.

Figure 3. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 1 m F

Figure 4. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 10 m F

Figure 3. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 1 m F

Figure 5. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 1 m F

Figure 4. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 10 m F

Figure 5. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 1 m F

Figure 6. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 10 m F

Figure 7. Output Voltage Noise Spectral Density for Adjustable Version - Different Output Voltage

Figure 6. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 10 m F

Figure 8. Output Voltage Noise Spectral Density for Adjustable Version for Various C1

Figure 7. Output Voltage Noise Spectral Density for Adjustable Version - Different Output Voltage

Figure 8. Output Voltage Noise Spectral Density for Adjustable Version for Various C1

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 21. Output Voltage vs. Temperature, (3.3 V)

Figure 23. Line Regulation vs. Temperature, (3.3 V)

Figure 22. Line Regulation vs. Temperature, (1.8 V)

Figure 25. Load Regulation vs. Temperature, (3.3 V)

Figure 24. Load Regulation vs. Temperature, (1.8 V)

Figure 26. Disable Current vs. Temperature

REGLOAD, LOAD REGULATION ( m V/mA)

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 27. Enable Current vs. Temperature

Figure 29. Short -Circuit vs. Temperature

Figure 28. Current Limit vs. Temperature

Figure 30. Short -Circuit Current vs. Temperature

Figure 31. Enable Threshold (High)

Figure 32. Enable Threshold (Low)

)

Figure 37. Power Supply Rejection Ratio, VOUT = 3.3 V

Figure 38. Power Supply Rejection Ratio, VOUT = 3.3 V, I OUT = 10 mA -Different C OUT

Figure 44. Enable Turn -on Response, COUT = 10 m F, I OUT = 10 mA

Figure 46. Line Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 45. Enable Turn -on Response, COUT = 10 m F, I OUT = 500 mA

Figure 47. Line Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 48. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 49. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 50. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 500 mA

10

m

s/div

Figure 51. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 51. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 54. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 53. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 54. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 55. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 53. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 57. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 57. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 60. Turn -on/off, Slow Rising V IN

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 62. Short -Circuit Current Peak

Figure 63. Enable Turn -off

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC -Q100 -002 (EIA/JESD22 -A114)

ESD Machine Model tested per AEC -Q100 -003 (EIA/JESD22 -A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

Table 3. THERMAL CHARACTERISTICS (Note 3)

When the die temperature exceeds the Thermal Shutdown threshold (T SD -160 ° C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU -140 ° C typical). Once the IC temperature falls below the 140 ° C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking.