PMEG3020ER
Schottky barrier rectifierThe PMEG3020ER is a schottky barrier rectifier from Nexperia. View the full PMEG3020ER datasheet below including key specifications, pinout.
Manufacturer
Nexperia
Category
Schottky barrier rectifier
Package
SOD123W
Key Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage (VR) | 30 V |
| Junction Temperature (Tj) | 150 °C |
| Forward Voltage (VF) @ IF=2A | 420 mV |
| Reverse Current (IR) @ VR=30V | 1.5 mA |
| Diode Capacitance (Cd) @ VR=1V | 170 pF |
| Total Power Dissipation (Ptot) | 1.8 W |
| Average Forward Current (IF(AV)) | 2 A |
| Operating Temperature Range (Tamb) | -55 °C to +150 °C |
Overview
Part: PMEG3020ER — Nexperia
Type: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier
Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring, offering 2 A average forward current and 30 V reverse voltage, AEC-Q101 qualified.
Operating Conditions:
- Operating temperature: -55 to +150 °C
- Max junction temperature: 150 °C
- Max reverse voltage: 30 V
Absolute Maximum Ratings:
- Max reverse voltage: 30 V (Tj = 25 °C)
- Max average forward current: 2 A (Tamb ≤ 90 °C or Tsp ≤ 140 °C)
- Max non-repetitive peak forward current: 50 A (square wave; tp = 8 ms)
- Max total power dissipation: 1.8 W (Tamb ≤ 25 °C, on FR4 PCB with standard footprint)
- Max junction temperature: 150 °C
- Max storage temperature: +150 °C
Key Specs:
- Forward voltage (VF): 230 mV (IF = 0.1 A, Tj = 25 °C)
- Forward voltage (VF): 365 mV (IF = 2 A, Tj = 25 °C)
- Reverse current (IR): 55 µA (VR = 5 V, Tj = 25 °C)
- Reverse current (IR): 0.6 mA (VR = 30 V, Tj = 25 °C)
- Diode capacitance (Cd): 170 pF (f = 1 MHz, VR = 1 V, Tj = 25 °C)
- Thermal resistance from junction to ambient (Rth(j-a)): 70 K/W (on ceramic PCB, Al2O3, standard footprint)
- Thermal resistance from junction to solder point (Rth(j-sp)): 18 K/W
Features:
- Average forward current: IF(AV) ≤ 2 A
- Reverse voltage: VR ≤ 30 V
- Low forward voltage
- High power capability due to clip-bond technology
- AEC-Q101 qualified
- Small and flat lead SMD plastic package
Applications:
- Low voltage rectification
- High efficiency DC-to-DC conversion
- Switch Mode Power Supply (SMPS)
- Reverse polarity protection
- Low power consumption applications
Package:
- SOD123W (2 leads)
Features
- n Average forward current: IF(AV) £ 2 A
- n Reverse voltage: VR £ 30 V
- n Low forward voltage
- n High power capability due to clip-bond technology
- n AEC-Q101 qualified
- n Small and flat lead SMD plastic package
Applications
- n Low voltage rectification
- n High efficiency DC-to-DC conversion
- n Switch Mode Power Supply (SMPS)
- n Reverse polarity protection
- n Low power consumption applications
Pin Configuration
PMEG3020ER — SOD123FL Package Pinout
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Cathode | – | Cathode terminal |
| 2 | Anode | – | Anode terminal |
Notes
- Package: SOD123FL (2-lead surface-mounted device)
- Device type: 2 A low VF MEGA Schottky barrier rectifier
- This is a simple 2-pin diode package with no additional pins or functions.
Thermal Information
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| R th(j-a) | thermal resistance from junction to ambient | in free air | [1][2] | ||||
| [3] | - | - | 220 | K/W | |||
| [4] | - | - | 130 | K/W | |||
| [5] | - | - | 70 | K/W | |||
| R th(j-sp) | thermal resistance from junction to solder point | [6] | - | - | 18 | K/W |
- [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10 3
Zth(j-a)
(K/W)
10 2
10
1
1
10
3
10
duty cycle =
1
0.5
0.25
0.1
0.02
0
2
10
1
FR4 PCB, mounting pad for cathode 1 cm 2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
0.75
0.33
0.2
0.05
0.01
10
006aab285
10 3
t p (s)
1
10
10 2
Package Information
2 A low VF MEGA Schottky barrier rectifier
Ordering Information
| MPN | Package | Temperature Range | Packing |
|---|
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