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PMEG3020ER

Schottky barrier rectifier

The PMEG3020ER is a schottky barrier rectifier from Nexperia. View the full PMEG3020ER datasheet below including key specifications, pinout.

Official PMEG3020ER datasheet (PDF) — the source this page was extracted from.

Manufacturer

Nexperia

Category

Diodes

Package

SOD123W

PMEG3020ER Key Specifications

ParameterValue
Reverse Voltage (VR)30 V
Junction Temperature (Tj)150 °C
Forward Voltage (VF) @ IF=2A420 mV
Reverse Current (IR) @ VR=30V1.5 mA
Diode Capacitance (Cd) @ VR=1V170 pF
Total Power Dissipation (Ptot)1.8 W
Average Forward Current (IF(AV))2 A
Operating Temperature Range (Tamb)-55 °C to +150 °C

PMEG3020ER Overview

Part: PMEG3020ER — Nexperia

Type: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier

Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring, offering 2 A average forward current and 30 V reverse voltage, AEC-Q101 qualified.

Operating Conditions:

  • Operating temperature: -55 to +150 °C
  • Max junction temperature: 150 °C
  • Max reverse voltage: 30 V

Absolute Maximum Ratings:

  • Max reverse voltage: 30 V (Tj = 25 °C)
  • Max average forward current: 2 A (Tamb ≤ 90 °C or Tsp ≤ 140 °C)
  • Max non-repetitive peak forward current: 50 A (square wave; tp = 8 ms)
  • Max total power dissipation: 1.8 W (Tamb ≤ 25 °C, on FR4 PCB with standard footprint)
  • Max junction temperature: 150 °C
  • Max storage temperature: +150 °C

Key Specs:

  • Forward voltage (VF): 230 mV (IF = 0.1 A, Tj = 25 °C)
  • Forward voltage (VF): 365 mV (IF = 2 A, Tj = 25 °C)
  • Reverse current (IR): 55 µA (VR = 5 V, Tj = 25 °C)
  • Reverse current (IR): 0.6 mA (VR = 30 V, Tj = 25 °C)
  • Diode capacitance (Cd): 170 pF (f = 1 MHz, VR = 1 V, Tj = 25 °C)
  • Thermal resistance from junction to ambient (Rth(j-a)): 70 K/W (on ceramic PCB, Al2O3, standard footprint)
  • Thermal resistance from junction to solder point (Rth(j-sp)): 18 K/W

Features:

  • Average forward current: IF(AV) ≤ 2 A
  • Reverse voltage: VR ≤ 30 V
  • Low forward voltage
  • High power capability due to clip-bond technology
  • AEC-Q101 qualified
  • Small and flat lead SMD plastic package

Applications:

  • Low voltage rectification
  • High efficiency DC-to-DC conversion
  • Switch Mode Power Supply (SMPS)
  • Reverse polarity protection
  • Low power consumption applications

Package:

  • SOD123W (2 leads)

PMEG3020ER Features

  • n Average forward current: IF(AV) £ 2 A
  • n Reverse voltage: VR £ 30 V
  • n Low forward voltage
  • n High power capability due to clip-bond technology
  • n AEC-Q101 qualified
  • n Small and flat lead SMD plastic package

PMEG3020ER Applications

  • n Low voltage rectification
  • n High efficiency DC-to-DC conversion
  • n Switch Mode Power Supply (SMPS)
  • n Reverse polarity protection
  • n Low power consumption applications

PMEG3020ER Pin Configuration

PMEG3020ER — SOD123FL (SOD123W) Package

Pin NumberPin NameTypeDescription
1Cathode–Cathode terminal
2Anode–Anode terminal

Notes

  • Package: SOD123W (also referred to as SOD123FL in some contexts) — 2-lead surface-mounted plastic package
  • Device type: 2 A low V_F MEGA Schottky barrier rectifier
  • Marking code: B9
  • This is a simple 2-terminal diode with no additional pins or functions

PMEG3020ER Thermal Information

SymbolParameterConditionsMinTypMaxUnit
R th(j-a)thermal resistance from junction to ambientin free air[1][2]
[3]--220K/W
[4]--130K/W
[5]--70K/W
R th(j-sp)thermal resistance from junction to solder point[6]--18K/W
  • [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[6] Soldering point of cathode tab.

FR4 PCB, standard footprint

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10 3

Zth(j-a)

(K/W)

10 2

10

1

1

10

3

10

duty cycle =

1

0.5

0.25

0.1

0.02

0

2

10

1

FR4 PCB, mounting pad for cathode 1 cm 2

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

0.75

0.33

0.2

0.05

0.01

10

006aab285

10 3

t p (s)

1

10

10 2

PMEG3020ER Package Information

2 A low VF MEGA Schottky barrier rectifier

PMEG3020ER Ordering Information

MPNPackageTemperature RangePacking

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All Diodes datasheetsAll Nexperia datasheets (54)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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