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PAM8403DR

Class-D Stereo Audio Amplifier

The PAM8403DR is a class-d stereo audio amplifier from Diodes Incorporated. View the full PAM8403DR datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

Diodes Incorporated

Category

Class-D Stereo Audio Amplifier

Overview

Part: PAM8403 from Diodes Incorporated

Type: Filterless Class-D Stereo Audio Amplifier

Description: A 2.5–5.5 V input, 3W Class-D stereo audio amplifier with filterless architecture, low quiescent current, and up to 90% efficiency, suitable for portable applications.

Operating Conditions:

  • Supply voltage: 2.5 to 5.5 V
  • Operating temperature: -40 to +85 °C
  • Junction temperature: -40 to +125 °C

Absolute Maximum Ratings:

  • Max supply voltage: 6.0 V
  • Max junction temperature: 150 °C
  • Max storage temperature: -65 to +150 °C

Key Specs:

  • Output Power (P_O): 2.5 W (Typ) at VDD = 5.0V, THD+N = 10%, f = 1KHz, R L = 4Ω
  • Total Harmonic Distortion Plus Noise (THD+N): 0.15 % (Typ) at VDD = 5.0V, P O = 1W, R L = 8Ω
  • Efficiency (η): 87 % (Typ) at R L = 8Ω, THD = 10%
  • Quiescent Current (I_Q): 16 mA (Typ) at VDD = 5.0V, No Load
  • Signal-to-Noise Ratio (SNR): 80 dB (Typ) at VDD = 5.0V, V ORMS = 1V, G V = 20db, f = 1kHz
  • Power Supply Ripple Rejection (PSRR): -59 dB (Typ) at VDD = 5.0V, f = 100Hz
  • Switching Frequency (f_SW): 260 kHz (Typ) at VDD = 3.0V to 5.0V
  • Closed Loop Gain (G_V): 24 dB (Typ) at VDD = 3V to 5V

Features:

  • 3W Output at 10% THD with a 4Ω Load and 5V Power Supply
  • Filterless, Low Quiescent Current and Low EMI
  • Low THD+N
  • Superior Low Noise
  • Efficiency up to 90%
  • Short Circuit Protection
  • Thermal Shutdown
  • Few External Components to Save the Space and Cost
  • Pb-Free Package

Applications:

  • LCD Monitors / TV Projectors
  • Notebook Computers
  • Portable Speakers
  • Portable DVD Players, Game Machines
  • Cellular Phones/Speaker Phones

Package:

  • SOP-16

Features

  • 3W Output at 10% THD with a 4Ω Load and 5V Power Supply
  • Filterless, Low Quiescent Current and Low EMI
  • Low THD+N
  • Superior Low Noise
  • Efficiency up to 90%
  • Short Circuit Protection
  • Thermal Shutdown
  • Few External Components to Save the Space and Cost
  • Pb-Free Package

Applications

Pin Configuration

Electrical Characteristics

SymbolParameterTest ConditionsTest ConditionsMinTypMaxUnits
V DDSupply VoltageV DD = 5.0V2.53.25.5V
W
THD+N = 10%, f = 1KHz, R L = 4ΩV DD = 3.6V
V DD = 3.2V
V DD = 5.0V
1.6
1.3
2.5
W
W
THD+N = 1%, f = 1KHz, R L = 4ΩV DD = 3.6V
V DD = 3.2V
1.3
0.85
W
W
P OOutput PowerTHD+N = 10%, f = 1KHz, R L = 8ΩV DD = 5.0V1.8
THD+N = 10%, f = 1KHz, R L = 8Ω
THD+N = 10%, f = 1KHz, R L = 8Ω
THD+N = 1%, f = 1KHz, R L = 8Ω
V DD = 3.6V
V DD = 3.2V
V DD = 5.0V
0.9
0.6
1.4
W
THD+N = 1%, f = 1KHz, R L = 8ΩV DD = 3.6V0.72W
THD+N = 1%, f = 1KHz, R L = 8ΩV DD = 3.2V0.45W
THD+NTotal Harmonic Distortion PlusV DD = 5.0V, P O = 1W, R L = 8Ω0.15%
THD+NTotal Harmonic Distortion PlusV DD = 3.6V, P O = 0.1W, R L = 8Ωf = 1kHz0.11%
THD+NNoiseV DD = 5.0V, P O = 0.5W, R L = 4Ω0.15
THD+NTotal Harmonic Distortion PlusV DD = 3.6V, P O = 0.2W, R L = 4Ωf = 1kHz0.11%
G VClosed Loop GainV DD = 3V to 5V24dB
PSRRPower Supply Ripple RejectionV DD = 5.0V, Inputs AC-Grounded with C IN = 0.47μFf = 100Hz f = 1kHz-59 -58dB
C SCrosstalkV DD = 5.0V, P O = 0.5W, R L = 8Ω, G V = 20dbf = 1kHz-95dB
SNRSignal-to-Noise RatioV DD = 5.0V, V ORMS = 1V, G V = 20dbf = 1kHz80dB
V NOutput NoiseV DD = 5.0V, Inputs AC-Grounded NoA-Weighting100μV
DynDynamic Rangewith C IN = 0.47μF V DD = 5.0V, THD = 1%A-Weighting f = 1kHz150 90dB
ηEfficiencyR L = 8Ω, THD = 10%87%
IR L = 4Ω, THD = 10%f = 1kHz83
QV DD = 5.0V16
Quiescent CurrentV DD = 3.6V
V DD = 3.0V
No Load10
8
mA
I MUTEMuting CurrentV DD = 5.0VV MUTE = 0.3V3.5mA
I SDShutdown CurrentV DD = 2.5V to 5.5VV SD = 0.3V< 1μA
R DS(ON)Static Drain-to-Source On-State ResistorI = 500mA, V = 5VPMOS180
f SWSwitching FrequencyDS GS V DD = 3.0V to 5.0VNMOS140 260kHz
V OSOutput Offset VoltageV IN = 0V, V DD = 5.0V10
V IHEnable Input High VoltageV DD = 5.0V1.51.4mV
V ILEnable Input Low VoltageV DD = 5.0V0.70.4V
V IHMUTE Input High VoltageV DD = 5.0V1.51.4
V ILMUTE Input Low VoltageV DD = 5.0V0.70.4V
OTPOver Temperature ProtectionNo Load, Junction Temperature140V
OTHOver Temperature HysterisisV DD = 5.0V30V

PAM8403

Absolute Maximum Ratings

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device reliability. All voltages are with respect to ground.

ParameterRatingUnit
Supply Voltage6.0V
Input Voltage-0.3 to V DD +0.3VV
Operation Temperature Range-40 to +85°C
Maximum Junction Temperature150°C
Operation Junction Temperature-40 to +125°C
Storage Temperature-65 to +150°C
Soldering Temperature300, 5 sec°C

Recommended Operating Conditions

ParameterRatingUnit
Supply Voltage Range2.5 to 5.5V
Operation Temperature Range-40 to +85°C
Junction Temperature Range-40 to +125°C

Thermal Information

ParameterPackageSymbolMaxUnit
Thermal Resistance (Junction to Ambient)SOP-16θ JA110°C/W
Thermal Resistance (Junction to Case)SOP-16θ JC23°C/W

PAM8403

Typical Application

Package Information

SO-16

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
PAM8403Diodes Incorporated
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