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NCV8114ASN330T1G

CMOS Low Dropout Voltage Regulator (LDO)

The NCV8114ASN330T1G is a cmos low dropout voltage regulator (ldo) from onsemi. View the full NCV8114ASN330T1G datasheet below including absolute maximum ratings.

Manufacturer

onsemi

Overview

Part: NCV8114

Type: Low Dropout (LDO) Linear Voltage Regulator

Description: The NCV8114 is a 300 mA LDO linear voltage regulator providing stable, accurate voltage with low noise, 1.7–5.5 V input, and very low quiescent current for space-constrained, noise-sensitive, and battery-operated applications.

Operating Conditions:

  • Supply voltage: 1.7 V to 5.5 V
  • Operating temperature: -40 to 125 °C (Junction Temperature)
  • Output voltage range: 0.9 V to 3.6 V (Fixed Voltage Options)

Absolute Maximum Ratings:

  • Max supply voltage: 6 V
  • Max continuous current: 300 mA
  • Max junction temperature: 150 °C

Key Specs:

  • Output Voltage Accuracy: -40 mV to 50 mV (V OUT ≤ 2.0 V), -2% to 3% (V OUT > 2.0 V)
  • Load Regulation: Typ. 28 mV, Max 45 mV (I OUT = 1 mA to 300 mA)
  • Dropout Voltage: Typ. 150 mV, Max 240 mV (at 300 mA, V OUT = 3.3 V)
  • Quiescent Current (Iq): Typ. 50 μA, Max 95 μA (I OUT = 0 mA)
  • Shutdown Current (Idis): Typ. 0.01 μA, Max 1 μA (VEN ≤ 0.4 V, VIN = 5.5 V)
  • Power Supply Rejection Ratio (PSRR): Typ. 75 dB (at 1 kHz)
  • Output Noise Voltage: Typ. 70 μV rms (10 Hz to 100 kHz)
  • Output Current Limit: Min 300 mA, Typ 600 mA

Features:

  • Available in Fixed Voltage Options: 0.9 V to 3.6 V
  • Operating Input Voltage Range: 1.7 V to 5.5 V
  • Very Low Quiescent Current of Typ. 50 μA
  • Low Dropout: 135 mV Typical at 300 mA
  • Standby Current Consumption: Typ. 0.1 μA
  • ±1% Accuracy at Room Temperature
  • Thermal Shutdown and Current Limit Protections

Features

  • Available in Fixed Voltage Options: 0.9 V to 3.6 V Contact Factory for Other Voltage Options
  • Operating Input Voltage Range: 1.7 V to 5.5 V
  • Very Low Quiescent Current of Typ. 50 m A
  • Low Dropout: 135 mV Typical at 300 mA
  • Standby Current Consumption: Typ. 0.1 m A
  • ± 1% Accuracy at Room Temperature
  • Thermal Shutdown and Current Limit Protections
  • High Power Supply Ripple Rejection: 75 dB at 1 kHz
  • Stable with a 1 m F Ceramic Output Capacitor
  • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC -Q100 Qualified and PPAP Capable
  • Available in TSOP Package
  • These Devices are Pb -Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

disable state the device consumes as low as typ. 10 nA from the VIN.

If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCV8114 regulates the output voltage and the active discharge transistor is turned -off.

The EN pin has internal pull -down current source with typ. value of 300 nA which assures that the device is turned -off when the EN pin is not connected. In the case where the EN function isn't required the EN should be tied directly to IN.

Pin Configuration

Pin No.Pin NameDescription
5OUTRegulated output voltage pin. A small ceramic capacitor with minimum value of 1 m F is needed from this pin to ground to assure stability.
2GNDPower supply ground.
3ENDriving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode.
1INInput pin. A small capacitor is needed from this pin to ground to assure stability.
4N/CNot connected. This pin can be tied to ground to improve thermal dissipation.

Absolute Maximum Ratings

RatingSymbolValueUnit
Input Voltage (Note 1)V IN- 0.3 V to 6 VV
Output VoltageVOUT- 0.3 V to VIN + 0.3 V or 6 VV
Enable InputVEN- 0.3 V to VIN + 0.3 V or 6 VV
Output Short Circuit Durationt SCs
Maximum Junction TemperatureT J(MAX)150° C
Operating Ambient TemperatureT A- 40 to 125° C
Storage TemperatureT STG- 55 to 150° C
ESD Capability, Human Body Model (Note 2)ESD HBM2000V
ESD Capability, Machine Model (Note 2)ESD MM200V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

  2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22 -A114, ESD Machine Model tested per EIA/JESD22 -A115, Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

Recommended Operating Conditions

RatingSymbolMinTypMaxUnit
Input VoltageV IN1.75.5V
Junction TemperatureT J- 40125° C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

ELECTRICAL CHARACTERISTICS -40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 1 V for V OUT options greater than 1.5 V. Otherwise V IN = 2.5 V, whichever is greater; I OUT = 1 mA, C IN = C OUT = 1 m F, unless otherwise noted. V EN = 0.9 V. Typical values are at T J = +25 ° C. Min./Max. are for T J = -40 ° C and T J = +125 ° C respectively (Note 4).

ParameterTest ConditionsTest ConditionsSymbolMinTypMaxUnit
Operating Input VoltageV IN1.75.5V
Output Voltage Accuracy- 40 ° C ≤ T J ≤ 125 ° CV OUT ≤ 2.0 VV OUT- 4050mV
Output Voltage Accuracy- 40 ° C ≤ T J ≤ 125 ° CV OUT > 2.0 VV OUT- 23%
Line RegulationVOUT + 0.5 V ≤ VIN ≤ 5.5 V (V IN ≥ 1.7 V)VOUT + 0.5 V ≤ VIN ≤ 5.5 V (V IN ≥ 1.7 V)Reg LINE0.010.1%/V
Load RegulationI OUT = 1 mA to 300 mAI OUT = 1 mA to 300 mAReg LOAD2845mV
Load TransientI OUT = 1 mA to 300 mA or 300 mA to 1 mA in 1 m s, C OUT = 1 m FI OUT = 1 mA to 300 mA or 300 mA to 1 mA in 1 m s, C OUT = 1 m FTran LOAD- 50/ +30mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 1.5 VV DO380500mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 1.85 VV DO260370mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 2.8 VV DO170270mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 3.0 VV DO160260mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 3.1 VV DO155250mV
Dropout Voltage (Note 5)OUT = 300 mAV OUT = 3.3 VV DO150240mV
Output Current LimitV OUT = 90% V OUT(nom)V OUT = 90% V OUT(nom)I CL300600mA
Ground CurrentI OUT = 0 mAI OUT = 0 mAI Q5095m A
Shutdown CurrentVEN ≤ 0.4 V, VIN = 5.5 VVEN ≤ 0.4 V, VIN = 5.5 VI DIS0.011m A
EN Pin Threshold Voltage High Threshold Low ThresholdV EN Voltage increasing V EN Voltage decreasingV EN Voltage increasing V EN Voltage decreasingV EN_HI V EN_LO0.90.4V
EN Pin Input CurrentVEN = 5.5 VI EN0.31m A
Power Supply Rejection RatioV IN = 4.3 V, V OUT = 3.3 V I OUT = 10 mAf = 1 kHzPSRR75dB
Output Noise VoltageV IN = 2.5 V, V OUT = 1.8 V, I OUT = 150 mA f = 10 Hz to 100 kHzV IN = 2.5 V, V OUT = 1.8 V, I OUT = 150 mA f = 10 Hz to 100 kHzV N70m V rms
Thermal Shutdown TemperatureTemperature increasing from TJ = +25 ° CTemperature increasing from TJ = +25 ° CT SD160° C
Thermal Shutdown HysteresisTemperature falling from T SDTemperature falling from T SDT SDH20° C
Active Output Discharge ResistanceVEN < 0.4 V, Version A onlyVEN < 0.4 V, Version A onlyR DIS100W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = T A = 25 ° C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

  2. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.

Figure 3. Output Voltage vs. Temperature -VOUT = 3.3 V

Figure 3. Output Voltage vs. Temperature -VOUT = 3.3 V

Figure 5. Ground Current vs. Output Current

Figure 7. Line Regulation vs. Temperature

Figure 4. Quiescent Current vs. Input Voltage

Figure 6. Ground Current vs. Temperature

Figure 8. Load Regulation vs. Temperature

Figure 9. Dropout Voltage vs. Output Current

Figure 9. Dropout Voltage vs. Output Current

Figure 11. Current Limit vs. Temperature

Figure 13. Enable Voltage Threshold vs. Temperature

Figure 10. Dropout Voltage vs. Temperature

Figure 12. Short Circuit Current vs. Temperature

Figure 14. Current to Enable Pin vs. Temperature

RMS Output Noise ( m V)RMS Output Noise ( m V)
I OUT10 Hz - 100 kHz100 Hz - 100 kHz
1 mA90.2583.61
10 mA84.5577.23
150 mA86.5780.86
300 mA95.3690.17

Figure 19. Output Voltage Noise Spectral Density -C OUT = 1 m F

Figure 26. Line Transient Response -Rising Edge, I OUT = 300 mA

Figure 26. Line Transient Response -Rising Edge, I OUT = 300 mA

Figure 28. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 30. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 28. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 27. Line Transient Response -Falling Edge, I OUT = 300 mA

Figure 30. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 29. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 31. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 300 mA

Figure 32. Turn -on/off -Slow Rising V IN

Figure 32. Turn -on/off -Slow Rising V IN

Figure 33. Short Circuit and Thermal Shutdown

Figure 34. Enable Turn -off

Figure 35.

Thermal Information

RatingSymbolValueUnit
Thermal Characteristics, TSOP - 5 Thermal Resistance, Junction - to - AirR q JA259.9° C/W
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