NCP705E

Part: NCP705 — onsemi

Type: Ultra-Low Noise 500 mA LDO Regulator

Description: A 500 mA LDO regulator providing a stable, accurate voltage with ultra-low noise (12 mV RMS) and very high Power Supply Rejection Ratio (71 dB at 1 kHz), featuring ultra-low quiescent current (13 mA) and suitable for noise-sensitive RF applications.

Operating Conditions:

• Supply voltage: 2.5 V to 5.5 V
• Operating temperature: -40 °C to 125 °C
• Output voltage range: 0.8 V to 5.5 V

Absolute Maximum Ratings:

• Max supply voltage: 6 V
• Max continuous current: 500 mA
• Max junction/storage temperature: 150 °C

Key Specs:

• Output Current: 500 mA
• Quiescent Current (I_Q): 13 mA typ (at I_OUT = 0 mA)
• Dropout Voltage (V_DO): 230 mV typ, 350 mV max (at I_OUT = 500 mA, V_OUT(nom) = 2.8 V)
• Output Voltage Accuracy: ±2% (over load/line/temperature)
• Power Supply Rejection Ratio (PSRR): 71 dB typ (at 1 kHz, V_IN = 3.8 V, V_OUT = 2.8 V, I_OUT = 500 mA)
• Output Noise Voltage (V_N): 12 mV rms typ (100 Hz to 100 kHz, V_OUT = 2.5 V, I_OUT = 500 mA)
• Reference Voltage (V_REF): 0.8 V typ
• Turn-On Time (t_ON): 150 µs typ (C_OUT = 1.0 µF)

Features:

• Fixed and Adjustable Voltage Options: 0.8 V to 5.5 V
• Ultra-Low Quiescent Current of Typ. 13 mA
• Ultra-Low Noise: 12 mV RMS from 100 Hz to 100 kHz
• High PSRR: 71 dB at 1 kHz
• Thermal Shutdown and Current Limit Protections
• Stable with a 1 µF Ceramic Output Capacitor

Applications:

• Wireless Handsets, Wireless LAN, Bluetooth, ZigBee
• PDAs, Mobile Phones, GPS, Smartphones
• Portable Medical Equipment
• Other Battery Powered Applications

Package:

• WDFN6

• Available -Fixed Voltage Option: 0.8 V to 3.5 V
• Operating Input Voltage Range: 2.5 V to 5.5 V

Available

• -Adjustable Voltage Option: 0.8 V to 5.5 V -VDROP
• Ultra -Low Quiescent Current of Typ. 13 m A
• Reference Voltage 0.8 V
• Ultra -Low Noise: 12 m VRMS from 100 Hz to 100 kHz
• ± 2% Accuracy Over Load/Line/Temperature
• Very Low Dropout: 230 mV Typical at 500 mA
• High PSRR: 71 dB at 1 kHz
• Thermal Shutdown and Current Limit Protections
• Internal Soft -Start to Limit the Turn -On Inrush Current
• Stable with a 1 m F Ceramic Output Capacitor
• These are Pb -Free Devices
• Active Output Discharge for Fast Turn -Off

• Wireless Handsets, Wireless LAN, Bluetooth , ZigBee
• PDAs, Mobile Phones, GPS, Smartphones
• Portable Medical Equipment
• Other Battery Powered Applications

WDFN6 CASE 511BR

-40 ° C ≤ T J ≤ 125 ° C; V IN = V OUT(NOM) + 0.5 V or 2.5 V, whichever is greater; V EN = 0.9 V, I OUT = 10 mA, C IN = C OUT = 1 m F unless otherwise noted. Typical values are at T J = +25 ° C. (Note 4)

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T J = T A = 25 _ C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

2. Characterized when V OUT falls 100 mV below the regulated voltage at V IN = V OUT(NOM) + 0.5 V.

Figure 3. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 1 m F

Figure 4. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 10 m F

Figure 5. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 1 m F

Figure 4. Output Voltage Noise Spectral Density for V OUT = 0.8 V, C OUT = 10 m F

Figure 6. Output Voltage Noise Spectral Density for V OUT = 3.3 V, C OUT = 10 m F

Figure 7. Output Voltage Noise Spectral Density for Adjustable Version - Different Output Voltage

Figure 8. Output Voltage Noise Spectral Density for Adjustable Version for Various C1

Figure 7. Output Voltage Noise Spectral Density for Adjustable Version - Different Output Voltage

TJ , JUNCTION TEMPERATURE (

°

C)

Figure 27. Enable Current vs. Temperature

Figure 27. Enable Current vs. Temperature

Figure 29. Short -Circuit vs. Temperature

Figure 31. Enable Threshold (High)

Figure 28. Current Limit vs. Temperature

Figure 30. Short -Circuit Current vs. Temperature

Figure 32. Enable Threshold (Low)

)

RR, RIPPLE REJECTION (dB)

100

90

80

70

60

50

40

30

20

10

VIN = 4.3 V + 100 mV PP

VOUT = 3.3 V

I LOAD = 500 mA

CIN = none

MLCC, X7R,

0

1206 size

0.01

1

100

10

80

COUT = 1

m

F

COUT = 4.7

m

COUT = 10

F

m

1k

0.1

FREQUENCY (kHz)

Figure 39. Power Supply Rejection Ratio, VOUT = 3.3 V, I OUT = 500 mA -Different C OUT

VIN = 4.3 V + 100 mV PP

VOUT = 3.3 V

R1 = 225k, R 2 = 82k

I LOAD = 10 mA

COUT = 1

m

F MLCC,

70

60

50

40

30

20

10

0

X7R, 1206 size

0.01

0.1

C1 = none

C1 = 100 pF

C1 = 1 nF

C1 = 10 nF

C1 = 100 nF

1k

10

100

1

FREQUENCY (kHz)

Figure 40. Power Supply Rejection Ratio, VOUT = 3.3 V, I OUT = 10 mA -Different C1

Figure 41. Output Capacitor ESR vs. Output Current

500 mV/div

1 V/div

VEN

I INRUSH

VOUT

F

500 mV/div

1 V/div

VEN

I INRUSH

VOUT

VIN = 3.8 V

VOUT = 3.3 V

VEN = 1 V

COUT = 1

m

F

CIN = 1

m

F

I OUT = 500 mA

100

m

s/div

Figure 42. Enable Turn -on Response, COUT = 1 m F, I OUT = 10 mA

10k

200 mA/div

RR, RIPPLE REJECTION (dB)

VIN = 3.8 V

VOUT = 3.3 V

VEN = 1 V

COUT = 1

m

F

CIN = 1

m

F

I OUT = 500 mA

100

m

s/div

Figure 43. Enable Turn -on Response, COUT = 1 m F, I OUT = 500 mA

10k

200 mA/div

Figure 44. Enable Turn -on Response, COUT = 10 m F, I OUT = 10 mA

Figure 44. Enable Turn -on Response, COUT = 10 m F, I OUT = 10 mA

Figure 46. Line Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 48. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 45. Enable Turn -on Response, COUT = 10 m F, I OUT = 500 mA

Figure 47. Line Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 10 mA

Figure 49. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 10 mA

Figure 50. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 50. Line Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 54. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 52. Load Transient Response -Rising Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

10

m

s/div

Figure 51. Line Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 500 mA

Figure 53. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 55. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 53. Load Transient Response -Falling Edge, V OUT = 0.8 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 56. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 60. Turn -on/off, Slow Rising V IN

Figure 58. Load Transient Response -Rising Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t RISE_IOUT = 1 m s, 10 m s

Figure 57. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, COUT = 1 m F, 10 m F

Figure 60. Turn -on/off, Slow Rising V IN

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 61. Short -Circuit and Thermal Shutdown

Figure 59. Load Transient Response -Falling Edge, V OUT = 3.3 V, I OUT = 1 mA to 500 mA, t FALL_IOUT = 1 m s, 10 m s

Figure 62. Short -Circuit Current Peak

Figure 63. Enable Turn -off

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC -Q100 -002 (EIA/JESD22 -A114)

ESD Machine Model tested per AEC -Q100 -003 (EIA/JESD22 -A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

Table 3. THERMAL CHARACTERISTICS (Note 3)

When the die temperature exceeds the Thermal Shutdown threshold (T SD * 160 ° C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU * 140 ° C typical). Once the IC temperature falls below the 140 ° C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. For reliable operation junction temperature should be limited to +125 ° C maximum.

• Wireless Handsets, Wireless LAN, Bluetooth , ZigBee
• PDAs, Mobile Phones, GPS, Smartphones
• Portable Medical Equipment
• Other Battery Powered Applications

WDFN6 CASE 511BR