MM3Z3V3

Zener Voltage Regulator Diode

The MM3Z3V3 is a zener voltage regulator diode from onsemi. View the full MM3Z3V3 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

MM3Z3V3 shares its datasheet with MM3Z2V4, whose page lists every part number it covers.

Official MM3Z3V3 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

MM3Z3V3 Key Specifications

Parameter	Value
ESD Rating	Class 3 (>16 kV HBM)
Capacitance	450 pF max @ VR=0, 1 MHz
Package Dimensions	1.7 mm x 1.25 mm x 0.9 mm
Test Current (Izt)	5 mA
Forward Voltage (Vf)	0.9 V max @ 10 mA
Max Zener Impedance (Zzk)	1000 Ω @ 0.5 mA
Max Zener Impedance (Zzt)	95 Ω @ 5 mA
Nominal Zener Voltage (Vz)	3.3V
Reverse Leakage Current (Ir)	5 µA @ 1.0 V
Temperature Coefficient Of Vz	-3.5 to 0 mV/K
Zener Voltage Range (Min-Max)	3.1V to 3.5V @ 5 mA
Steady State Power Dissipation	500 mW (on 1 inch² copper heat sink pad)
Junction And Storage Temperature	-65 to +150 °C
Power Dissipation (FR-4, 1 Cm² Pad)	300 mW
Thermal Resistance Junction-To-Ambient	416 °C/W (1 cm² pad) / 250 °C/W (heat sink)

MM3Z3V3 Overview

Part: MM3ZxxxT1G Series, SZMM3ZxxxT1G Series — onsemi

Type: Zener Diode

Description: 500 mW surface mount Zener diodes offering voltage regulation protection with a Zener breakdown voltage range of 2.4 V to 75 V.

Operating Conditions:

Operating temperature: -65 to +150 °C

Absolute Maximum Ratings:

Max total device dissipation: 500 mW
Max junction/storage temperature: +150 °C

Key Specs:

Nominal Zener Voltage (Vz): 2.4 V to 75 V
Forward Voltage (Vf): 0.9 V Max. @ 10 mA
ESD Rating: > 16 kV (Human Body Model)
Max Zener Impedance (Zzt): 10 Ω to 255 Ω (at Izt)
Max Reverse Leakage Current (Ir): 0.05 μA to 50 μA (at Vr)
Max Capacitance (C): 35 pF to 450 pF (at VR = 0, f = 1 MHz)

Features:

Steady State Power Rating of 500 mW
Standard Zener Breakdown Voltage Range -2.4 V to 75 V
Small Body Outline Dimensions: 1.7 mm x 1.25 mm
Low Body Height: 0.9 mm
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Pb-Free Devices
AEC-Q101 Qualified and PPAP Capable (SZ Prefix)

Applications:

Cellular phones
Hand held portables
High density PC boards

Package:

SOD-323

MM3Z3V3 Features

Steady State Power Rating of 500 mW
Standard Zener Breakdown Voltage Range -2.4 V to 75 V
Small Body Outline Dimensions: 0.067 ″ x 0.049 ″ (1.7 mm x 1.25 mm)
Package Weight: 4.507 mg/Unit
Low Body Height: 0.035 ″ (0.9 mm)
ESD Rating of Class 3 (> 16 kV) per Human Body Model
These are Pb-Free Devices*
SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

MM3Z3V3 Electrical Characteristics

Symbol	Parameter
V Z	Reverse Zener Voltage @I ZT
I ZT	Reverse Current
Z ZT	Maximum Zener Impedance @I ZT
I ZK	Reverse Current
Z ZK	Maximum Zener Impedance @I ZK
I R	Reverse Leakage Current@V R
V R	Reverse Voltage
I F	Forward Current
V F	Forward Voltage @I F
Q V Z	Maximum Temperature Coefficient of V Z
C	Max. Capacitance@V R = 0 and f = 1 MHz

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)

	Device Marking	Zener Voltage	Zener Voltage	(Note	3)	Zener Impedance	Zener Impedance	Zener Impedance	Leakage Current	Leakage Current	Q V Z (mV/k)	Q V Z (mV/k)	C @V R = 0 f = 1 MHz
Device*	Device Marking	V Z (Volts)	V Z (Volts)	V Z (Volts)	@I ZT	Z ZT @I ZT	Z ZK @I ZK	Z ZK @I ZK	I R @V R	I R @V R	@I ZT	@I ZT
Device*	Device Marking	Min	Nom	Max	mA	W	W	mA	m A	Volts	Min	Max	pF
MM3Z2V4T1G	00	2.2	2.4	2.6	5	100	1000	0.5	50	1.0	- 3.5	0	450
MM3Z2V7T1G	01	2.5	2.7	2.9	5	100	1000	0.5	20	1.0	- 3.5	0	450
MM3Z3V0T1G	02	2.8	3.0	3.2	5	100	1000	0.5	10	1.0	- 3.5	0	450
MM3Z3V3T1G	05	3.1	3.3	3.5	5	95	1000	0.5	5	1.0	- 3.5	0	450
MM3Z3V6T1G	06	3.4	3.6	3.8	5	90	1000	0.5	5	1.0	- 3.5	0	450
MM3Z3V9T1G	07	3.7	3.9	4.1	5	90	1000	0.5	3	1.0	- 3.5	- 2.5	450
MM3Z4V3T1G	08	4.0	4.3	4.6	5	90	1000	0.5	3	1.0	- 3.5	0	450
SZMM3Z4V3T1G	X9	4.0	4.3	4.6	5	90	1000	0.5	3	1.0	- 3.5	0	450
MM3Z4V7T1G	09	4.4	4.7	5.0	5	80	800	0.5	3	2.0	- 3.5	0.2	260
MM3Z5V1T1G	0A	4.8	5.1	5.4	5	60	500	0.5	2	2.0	- 2.7	1.2	225
MM3Z5V6T1G	0C	5.2	5.6	6.0	5	40	200	0.5	1	2.0	- 2.0	2.5	200
MM3Z6V2T1G	0E	5.8	6.2	6.6	5	10	100	0.5	3	4.0	0.4	3.7	185
MM3Z6V8T1G	0F	6.4	6.8	7.2	5	15	160	0.5	2	4.0	1.2	4.5	155
MM3Z7V5T1G	0G	7.0	7.5	7.9	5	15	160	0.5	1	5.0	2.5	5.3	140
MM3Z8V2T1G	0H	7.7	8.2	8.7	5	15	160	0.5	0.7	5.0	3.2	6.2	135
MM3Z9V1T1G	0K	8.5	9.1	9.6	5	15	160	0.5	0.2	7.0	3.8	7.0	130
MM3Z10VT1G	0L	9.4	10	10.6	5	20	160	0.5	0.1	8.0	4.5	8.0	130
MM3Z11VT1G	0M	10.4	11	11.6	5	20	160	0.5	0.1	8.0	5.4	9.0	130
MM3Z12VT1G	0N	11.4	12	12.7	5	25	80	0.5	0.1	8.0	6.0	10	130
MM3Z13VT1G	0P	12.4	13.25	14.1	5	30	80	0.5	0.1	8.0	7.0	11	120
MM3Z15VT1G	0T	14.3	15	15.8	5	30	80	0.5	0.05	10.5	9.2	13	110
MM3Z16VT1G	0U	15.3	16.2	17.1	5	40	80	0.5	0.05	11.2	10.4	14	105
MM3Z18VT1G	0W	16.8	18	19.1	5	45	80	0.5	0.05	12.6	12.4	16	100
MM3Z20VT1G	0Z	18.8	20	21.2	5	55	100	0.5	0.05	14.0	14.4	18	85
MM3Z22VT1G	10	20.8	22	23.3	5	55	100	0.5	0.05	15.4	16.4	20	85
MM3Z24VT1G	11	22.8	24.2	25.6	5	70	120	0.5	0.05	16.8	18.4	22	80
MM3Z27VT1G	12	25.1			2	80	300	0.5			21.4	25.3	70
MM3Z30VT1G	14	28	27	28.9	2	80	300	0.5	0.05 0.05	18.9	24.4	29.4	70
MM3Z33VT1G	18	31	30 33	32 35	2	80	300	0.5	0.05	21.0 23.2	27.4	33.4	70
MM3Z36VT1G	19	34	36	38	2	90	500	0.5	0.05	25.2	30.4	37.4	70
MM3Z39VT1G	20	37	39	41	2	130	500	0.5	0.05	27.3	33.4	41.2	45
MM3Z43VT1G	21	40	43	46	2	150	500	0.5	0.05	30.1	37.6	46.6	40
MM3Z47VT1G	1A	44	47	50	2	170	500	0.5	0.05	32.9	42.0	51.8	40
MM3Z51VT1G	1C	48	51	54	2	180	500	0.5	0.05	35.7	46.6	57.2	40
MM3Z56VT1G	1D	52	56	60	2	200	500	0.5	0.05	39.2	52.2	63.8	40
MM3Z62VT1G	2A	58	62	66	2	215	500	0.5	0.05	43.4	58.9	71.8	35
MM3Z68VT1G	1F	64	68	72	2	240	500	0.5	0.05	47.6	65.6	79.8	35
MM3Z75VT1G	1G	70	75	79	2	255	500	0.5	0.05	52.5	73.4	88.6	35

MM3Z3V3 Absolute Maximum Ratings

Rating	Symbol	Max	Unit
Total Device Dissipation FR-4 Board, (Note 1)@T A = 25 ° C Derate above 25 ° C (Note 2)@T A = 25 ° C Derate above 25 ° C	P D	300 2.4 500 4.0	mW mW/ ° C mW mW/ ° C
Thermal Resistance from Junction-to-Ambient (Note 1) (Note 2)	R q JA	416 250	° C/W ° C/W C
Junction and Storage Temperature Range	T J , T stg	- 65 to +150	°

FR-4 printed circuit board, single-sided copper, mounting pad 1 cm 2 .
FR-4 printed circuit board, single-sided copper, mounting pad = 0.72 mm 2 , 1 inch 2 Copper Heat Sink

SOD-323 CASE 477 STYLE 1

SOD-323 CASE 477 STYLE 1

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part Number	Manufacturer	Package
MM3Z2V4	onsemi	SOD-323
MM3Z2V7	onsemi	SOD-323
MM3Z3V0	onsemi	SOD-323
MM3Z3V6	onsemi	SOD-323

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All Diodes datasheets All onsemi datasheets (357)

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