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MM3Z3V3

The MM3Z3V3 is an electronic component from onsemi. View the full MM3Z3V3 datasheet below including electrical characteristics, absolute maximum ratings.

Manufacturer

onsemi

Overview

Part: MM3ZxxxT1G Series, SZMM3ZxxxT1G Series — onsemi

Type: Zener Diode

Description: 500 mW surface mount Zener diodes offering voltage regulation protection with a Zener breakdown voltage range of 2.4 V to 75 V.

Operating Conditions:

  • Operating temperature: -65 to +150 °C

Absolute Maximum Ratings:

  • Max total device dissipation: 500 mW
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Nominal Zener Voltage (Vz): 2.4 V to 75 V
  • Forward Voltage (Vf): 0.9 V Max. @ 10 mA
  • ESD Rating: > 16 kV (Human Body Model)
  • Max Zener Impedance (Zzt): 10 Ω to 255 Ω (at Izt)
  • Max Reverse Leakage Current (Ir): 0.05 μA to 50 μA (at Vr)
  • Max Capacitance (C): 35 pF to 450 pF (at VR = 0, f = 1 MHz)

Features:

  • Steady State Power Rating of 500 mW
  • Standard Zener Breakdown Voltage Range -2.4 V to 75 V
  • Small Body Outline Dimensions: 1.7 mm x 1.25 mm
  • Low Body Height: 0.9 mm
  • ESD Rating of Class 3 (> 16 kV) per Human Body Model
  • Pb-Free Devices
  • AEC-Q101 Qualified and PPAP Capable (SZ Prefix)

Applications:

  • Cellular phones
  • Hand held portables
  • High density PC boards

Package:

  • SOD-323

Features

  • Steady State Power Rating of 500 mW
  • Standard Zener Breakdown Voltage Range -2.4 V to 75 V
  • Small Body Outline Dimensions: 0.067 ″ x 0.049 ″ (1.7 mm x 1.25 mm)
  • Package Weight: 4.507 mg/Unit
  • Low Body Height: 0.035 ″ (0.9 mm)
  • ESD Rating of Class 3 (> 16 kV) per Human Body Model
  • These are Pb-Free Devices*
  • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Electrical Characteristics

SymbolParameter
V ZReverse Zener Voltage @I ZT
I ZTReverse Current
Z ZTMaximum Zener Impedance @I ZT
I ZKReverse Current
Z ZKMaximum Zener Impedance @I ZK
I RReverse Leakage Current@V R
V RReverse Voltage
I FForward Current
V FForward Voltage @I F
Q V ZMaximum Temperature Coefficient of V Z
CMax. Capacitance@V R = 0 and f = 1 MHz

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA for all types)

Device MarkingZener VoltageZener Voltage(Note3)Zener ImpedanceZener ImpedanceZener ImpedanceLeakage CurrentLeakage CurrentQ V Z (mV/k)Q V Z (mV/k)C @V R = 0 f = 1 MHz
Device*Device MarkingV Z (Volts)V Z (Volts)V Z (Volts)@I ZTZ ZT @I ZTZ ZK @I ZKZ ZK @I ZKI R @V RI R @V R@I ZT@I ZT
Device*Device MarkingMinNomMaxmAWWmAm AVoltsMinMaxpF
MM3Z2V4T1G002.22.42.6510010000.5501.0- 3.50450
MM3Z2V7T1G012.52.72.9510010000.5201.0- 3.50450
MM3Z3V0T1G022.83.03.2510010000.5101.0- 3.50450
MM3Z3V3T1G053.13.33.559510000.551.0- 3.50450
MM3Z3V6T1G063.43.63.859010000.551.0- 3.50450
MM3Z3V9T1G073.73.94.159010000.531.0- 3.5- 2.5450
MM3Z4V3T1G084.04.34.659010000.531.0- 3.50450
SZMM3Z4V3T1GX94.04.34.659010000.531.0- 3.50450
MM3Z4V7T1G094.44.75.05808000.532.0- 3.50.2260
MM3Z5V1T1G0A4.85.15.45605000.522.0- 2.71.2225
MM3Z5V6T1G0C5.25.66.05402000.512.0- 2.02.5200
MM3Z6V2T1G0E5.86.26.65101000.534.00.43.7185
MM3Z6V8T1G0F6.46.87.25151600.524.01.24.5155
MM3Z7V5T1G0G7.07.57.95151600.515.02.55.3140
MM3Z8V2T1G0H7.78.28.75151600.50.75.03.26.2135
MM3Z9V1T1G0K8.59.19.65151600.50.27.03.87.0130
MM3Z10VT1G0L9.41010.65201600.50.18.04.58.0130
MM3Z11VT1G0M10.41111.65201600.50.18.05.49.0130
MM3Z12VT1G0N11.41212.7525800.50.18.06.010130
MM3Z13VT1G0P12.413.2514.1530800.50.18.07.011120
MM3Z15VT1G0T14.31515.8530800.50.0510.59.213110
MM3Z16VT1G0U15.316.217.1540800.50.0511.210.414105
MM3Z18VT1G0W16.81819.1545800.50.0512.612.416100
MM3Z20VT1G0Z18.82021.25551000.50.0514.014.41885
MM3Z22VT1G1020.82223.35551000.50.0515.416.42085
MM3Z24VT1G1122.824.225.65701200.50.0516.818.42280
MM3Z27VT1G1225.12803000.521.425.370
MM3Z30VT1G14282728.92803000.50.05 0.0518.924.429.470
MM3Z33VT1G183130 3332 352803000.50.0521.0 23.227.433.470
MM3Z36VT1G193436382905000.50.0525.230.437.470
MM3Z39VT1G2037394121305000.50.0527.333.441.245
MM3Z43VT1G2140434621505000.50.0530.137.646.640
MM3Z47VT1G1A44475021705000.50.0532.942.051.840
MM3Z51VT1G1C48515421805000.50.0535.746.657.240
MM3Z56VT1G1D52566022005000.50.0539.252.263.840
MM3Z62VT1G2A58626622155000.50.0543.458.971.835
MM3Z68VT1G1F64687222405000.50.0547.665.679.835
MM3Z75VT1G1G70757922555000.50.0552.573.488.635

Absolute Maximum Ratings

RatingSymbolMaxUnit
Total Device Dissipation FR-4 Board, (Note 1)@T A = 25 ° C Derate above 25 ° C (Note 2)@T A = 25 ° C Derate above 25 ° CP D300 2.4 500 4.0mW mW/ ° C mW mW/ ° C
Thermal Resistance from Junction-to-Ambient (Note 1) (Note 2)R q JA416 250° C/W ° C/W C
Junction and Storage Temperature RangeT J , T stg- 65 to +150°
  1. FR-4 printed circuit board, single-sided copper, mounting pad 1 cm 2 .
  2. FR-4 printed circuit board, single-sided copper, mounting pad = 0.72 mm 2 , 1 inch 2 Copper Heat Sink

SOD-323 CASE 477 STYLE 1

SOD-323 CASE 477 STYLE 1

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
MM1Z15WJingdao
MM3Z2V4onsemi
MM3Z2V7onsemi
MM3Z3V0onsemi
MM3Z3V6onsemi
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