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MCIMX7D3DVK10SD

Applications Processor

The MCIMX7D3DVK10SD is a applications processor from NXP Semiconductors. View the full MCIMX7D3DVK10SD datasheet below including key specifications, electrical characteristics.

Official MCIMX7D3DVK10SD datasheet (PDF) — the source this page was extracted from.

Manufacturer

NXP Semiconductors

Category

Applications Processor

Lifecycle

Production (Last Updated: 2 months ago)

MCIMX7D3DVK10SD Key Specifications

ParameterValue
Case/PackageTFBGA
China RoHSCompliant
Height - Seated (Max)1.1 mm
Introduction Date2017-07-25
Length12 mm
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Operating Temperature95 °C
Max Supply Voltage1.25 V
Min Operating Temperature0 °C
Min Supply Voltage1.2 V
Nominal Supply Voltage (DC)1.225 V
Number of Pins488
Number of Terminals488
PackagingTray
REACH SVHCYes
RoHSCompliant
Standard Pack Qty152
Terminal Pitch400 µm
Width12 mm

MCIMX7D3DVK10SD Overview

Part: MCIMX7D3DVK10SD — NXP Semiconductors

Type: Arm Cortex-A7 / Cortex-M4 heterogeneous multicore applications processor (i.MX 7Dual family)

Description: Dual Arm Cortex-A7 (1 GHz) plus Cortex-M4 applications processor with up to 32-bit DDR3/DDR3L/LPDDR2/LPDDR3-1066 interface, 2x Gigabit Ethernet, and 1x 12-bit ADC, in a 12x12 mm 0.4 mm pitch BGA.

Operating Conditions:

  • Operating temperature (Tj): 0 to +95 °C (Consumer tier, per Table 1 for this part number)
  • Cortex-A7 CPU speed grade: 1 GHz

Absolute Maximum Ratings:

The provided absolute maximum ratings extract contains only MIPI DSI interface electrical limits and no supply voltage, current, or temperature ratings:

  • DSI input signal voltage range: -50 to 1350 mV (transient range limited to -300 mV to 1600 mV)
  • DSI ground shift: -50 to 50 mV
  • DSI maximum transient output voltage level: 1.45 V (maximum transient time above this level: 20 ns)

Key Specs:

  • CPU: two Cortex-A7 cores at 1 GHz, each with 32 KB L1 I-cache and 32 KB L1 D-cache, plus shared 512 KB L2 cache
  • Cortex-M4 with FPU and MPU, 16 KB instruction cache, 16 KB data cache, 64 KB TCM
  • On-chip memory: 96 KB boot ROM, 256 KB OCRAM, 32 KB secure RAM
  • External memory: up to 32-bit LPDDR2/DDR3/DDR3L/LPDDR3-1066, NAND, NOR, QSPI
  • Ethernet: 2x 10/100/1000 Mbps with IEEE 1588 and AVB
  • USB: 2x HS OTG with PHY, 1x HS host with HSIC; PCIe 2.1 one lane
  • ADC: one 2-channel 12-bit ADC (12x12 mm package; ENOB typically 9–10 bits)
  • DSI HS transmit differential output voltage |VOD|: 140 / 200 / 270 mV (min/typ/max)

Features:

  • Heterogeneous multicore: Linux/Android on Cortex-A7, RTOS on Cortex-M4
  • NEON media processing engine and SDMA controller
  • Three MMC/SD/SDIO ports (one supports HS400)
  • Parallel 24-bit display port and MIPI-DSI; parallel camera port and MIPI-CSI
  • Seven UARTs, four eCSPI, four I2C, three SAI, four PWM, quad SPI, 8x8 keypad port
  • Security: TrustZone, CAAM, SNVS, CSU, HABv4, secure JTAG controller
  • Integrated PMU with multiple LDOs and on-die temperature sensor
  • This variant has no EPDC and no CAN, with 4 tamper pins

Applications:

  • Audio
  • Connected devices
  • Access control panels
  • Human-machine interfaces (HMI)
  • Portable medical and health care
  • IP phones
  • Smart appliances
  • Point of Sale
  • eReaders
  • Wearables
  • Home energy management systems

Package:

  • BGA 12 x 12 mm, 0.4 mm pitch (this part)
  • BGA 19 x 19 mm, 0.75 mm pitch (other family variants)

MCIMX7D3DVK10SD Features

The i.MX 7Dual family of processors is based on Arm Cortex-A7 MPCore™ Platform, which has the following features:

  • Two Arm Cortex-A7 Cores (with TrustZone ® technology)

  • The core configuration is symmetric, where each core includes:

  • 32 KByte L1 Instruction Cache

  • 32 KByte L1 Data Cache

  • Private Timer and Watchdog

  • NEON MPE (media processing engine) coprocessor

MCIMX7D3DVK10SD Electrical Characteristics

This section provides the device and module -level electrical characteristics for the i.MX 7Dual family of processors.

MCIMX7D3DVK10SD Thermal Information

Table 8 displays the thermal resistance data.

Per JEDEC JESD51-2, the intent of thermal resistance measurements is solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and does not predict the performance of a package in an application-specific environment.

Table 8. Thermal Resistance Data

RatingTest conditionsSymbol12x12 pkg value19x19 pkg valueUnit
Junction to Ambient 1Single-layer board (1s); natural convection 2 Four-layer board (2s2p); natural convection 2R JA R JA55.4 32.644.4 30.2o C/W o C/W
Junction to Ambient 1Single-layer board (1s); airflow 200 ft/min 2,3 Four-layer board (2s2p); airflow 200 ft/min 2,3R JA R JA41.8 28.034.3 25.8o C/W o C/W
Junction to Board 1,4-R ← JB16.017.4o C/W
Junction to Case 1,5-R ← JC10.510.4o C/W
Junction to Package Top 1,6Natural ConvectionJT0.20.2o C/W
Junction to Package BottomNatural ConvectionR B_CSB15.317.3o C/W

5 Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).

  • 6 Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT.

MCIMX7D3DVK10SD Package Information

Plastic Package

BGA 12 x 12 mm, 0.4 mm pitch BGA 19 x 19 mm, 0.75 mm pitch

More datasheets

All NXP Semiconductors datasheets (189)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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