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LT4423

Ideal Diode and Load Switch

The LT4423 is a ideal diode and load switch from Analog Devices. View the full LT4423 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official LT4423 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Analog Devices

Category

Ideal Diode and Load Switch

LT4423 Key Specifications

ParameterValue
ApplicationsGeneral Purpose
Current - Output (Max)2A
Quiescent Current10 µA
Delay Time - OFF15 µs
Delay Time - ON3 µs
FET TypeP-Channel
Internal Switch(s)Yes
Lifecycle StatusProduction (Last Updated: 20 hours ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 20 hours ago)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Package / Case10-VFDFN Exposed Pad
PackagingMouseReel
Ratio - Input:Output1:1
Standard Pack Qty2500
Supplier Device Package10-LDFN (3x2)
TypeN+1 ORing Controller
Supply Voltage1.9V ~ 28V

LT4423 Overview

Part: LT4423A (LT4423AV#TRPBF) — Analog Devices (Linear Technology)

Type: Ideal Diode and Load Switch (integrated P-channel MOSFETs)

Description: 1.9–28 V, 2 A ideal diode and load switch with 200 mΩ typical internal power path, 15 mV forward voltage regulation and 10 μA typical quiescent current.

Operating Conditions:

  • Supply voltage (IN): 1.9–28 V (−40°C ≤ TJ ≤ 125°C)
  • Operating junction temperature: −40 to 125 °C
  • Typical RON (200 mΩ) achieved when IN ≥ 4 V; RON rises below 4 V

Absolute Maximum Ratings:

  • IN supply voltage: −0.3 V to 30 V
  • OUT supply voltage: −30 V to 30 V
  • |IN − OUT|: 30 V
  • SHDN input voltage: −30 V to 30 V
  • STATUS output voltage: −0.3 V to 30 V
  • Input current IN: 3 A
  • Output current OUT: −3 A
  • Operating junction temperature (LT4423A): −40 to 125 °C
  • Storage temperature: −65 to 150 °C

Key Specs:

  • Forward regulation voltage (IN − OUT): 15 mV typ (5–25 mV), IOUT = −10 mA
  • Internal path on-resistance: 200 mΩ typ (115–400 mΩ), IOUT = −1 A
  • Quiescent current in forward regulation: 10 μA typ, 18 μA max (IOUT = −10 mA)
  • Quiescent current in shutdown: 0.1 μA typ, 2 μA max
  • Reverse leakage current to IN: 0.1 μA typ, 0.5 μA max (IN = GND, OUT = 28 V, SHDN = GND)
  • Reverse turn-off time: 15 μs typ, 25 μs max
  • Response time to load step (−10 mA to −1 A): 3 μs typ, 7 μs max
  • SHDN rising threshold: 1.3 V typ (1–1.6 V); SHDN hysteresis 130 mV typ
  • Thermal shutdown: 160 °C typ (power path restored at about 145 °C)

Features:

  • Internal 200 mΩ power path
  • Reverse current protection
  • Load switch capability
  • Smooth switchover in diode-OR applications
  • Blocks up to 28 V in either direction or polarity when not enabled
  • Open-drain STATUS output indicating shutdown, reverse bias or thermal protection
  • Integrated thermal protection

Applications:

  • Schottky diode replacement
  • Battery and wall adapter diode ORing
  • Backup battery diode ORing
  • Industrial and consumer hand-held applications

Package:

  • 10-lead LDFN (3 mm × 2 mm × 0.75 mm)

LT4423 Features

  • Internal 200mΩ Power Path
  • Wide Operating Voltage Range: 1.9V to 28V
  • Reverse Current Protection
  • Load Switch Capability
  • Low 10μA Quiescent Current
  • Fast 3μs Response to Load Steps
  • Low 500nA Off State Current
  • Smooth Switchover in Diode-OR Applications
  • Integrated Thermal Protection
  • 10-Lead (3mm x 2mm x 0.75mm) LDFN Package

LT4423 Applications

  • Schottky Diode Replacement
  • Battery and Wall Adapter Diode ORing
  • Backup Battery Diode ORing
  • Industrial and Consumer Hand-Held Applications

LT4423 Pin Configuration

Figure 3. Pin Configurations

LT4423 Electrical Characteristics

(Specifications are at TA = 25°C, IN = SHDN = 8.4V, unless otherwise noted.)

PARAMETERSYMBOLCONDITIONS/COMMENTSCONDITIONS/COMMENTSMINTYPMAXUNITS
Operating Voltage RangeV IN- 40°C ≤ T J ≤ 125°C- 40°C ≤ T J ≤ 125°C1.928V
Quiescent Current in Forward RegulationI CCI OUT = -10mA Measured ThroughGND- 40°C ≤ T J ≤ 125°C-10-18μA
Quiescent Current in ShutdownI SDSHDN =GND Measured ThroughGND- 40°C ≤ T J ≤ 125°C-0.1-2μA
Reverse Leakage Current to INI REV(IN)IN=GND,OUT= 28V, SHDN = GND- 40°C ≤ T J ≤ 125°C-0.1-0.5μA
Reverse Leakage Current toOUTI REV(OUT)IN=GND,OUT= 28V, SHDN = GND- 40°C ≤ T J ≤ 125°C0.13μA
Forward Regulation Voltage (IN - OUT)V REGI OUT = -10mA- 40°C ≤ T J ≤ 125°C51525mV
Internal Path On- ResistanceR ONI OUT = -1A- 40°C ≤ T J ≤ 125°C115200400m
Reverse Turn-Off Timet REVStep OUTfrom 8.4V to 8.6V STATUS Falling- 40°C ≤ T J ≤ 125°C1525μs
Response Time to Load Stept FONStep I OUT from - 10mA to -1A- 40°C ≤ T J ≤ 125°C37μs
SHDN Rising ThresholdV SRT- 40°C ≤ T J ≤ 125°C- 40°C ≤ T J ≤ 125°C11.31.6V
SHDN HysteresisV HYST- 40°C ≤ T J ≤ 125°C- 40°C ≤ T J ≤ 125°C-75-130-230mV
SHDN Input CurrentI SHDNSHDN = 28V- 40°C ≤ T J ≤ 125°C12μA
SHDN Delay to Power Path Enablet ONStep SHDN from GNDto IN STATUS Released- 40°C ≤ T J ≤ 125°C5701000μs
SHDN Delay to Power Path Disablet OFFStep SHDN from IN toGND STATUS Falling- 40°C ≤ T J ≤ 125°C85160μs
STATUS Output Voltage LowV OL(STAT)I STATUS = 1mA, SHDN =GND- 40°C ≤ T J ≤ 125°C180410mV
STATUS Output High LeakageI OH(STAT)STATUS = 28V- 40°C ≤ T J ≤ 125°C±5±200nA
Temperature when Power Path Disabled 4T TSD145160175°C

LT4423 Absolute Maximum Ratings

TA = 25°C 5 , unless otherwise specified.

Table 2. Absolute Maximum Ratings

PARAMETERRATING
Supply Voltage IN- 0.3V to 30V
Supply VoltageOUT- 30V to 30V
Supply Voltage |IN - OUT|30V
Input Voltage SHDN- 30V to 30V
Output Voltage STATUS- 0.3V to 30V
Input Current IN3A
Output CurrentOUT- 3A
Operating Junction Temperature Range LT4423A- 40°C to 125°C
Storage Temperature Range- 65°C to 150°C

.

1 All currents into pins are positive; all voltages are referenced to GND unless otherwise noted.

  • 2 The LT4423 is tested under pulsed load conditions such that T J ≈ T A . The junction temperature (T J in °C) is calculated from the ambient temperature (T A in °C) and power dissipation (P D in Watts) according to the formula: T J = T A + (P D · θ JA ).
  • 3 The LT4423 includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 150°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability.
  • 4 Determined by design, not tested in production.
  • 5 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.

LT4423 Thermal Information

The following advice should be considered when laying out a printed circuit board for the LT4423. First, connect the exposed pad (also connected to IN) to a sufficiently large copper plane for thermal relief. Use Figure 16 to find the minimum copper area (connected to IN) required to limit junction temperature for a given load current and ambient temperature.

017

Figure 16. Minimum Thermal Copper vs Load Current and Ambient Temperature

PCB traces to the IN and OUT pins should be wide and short to minimize series resistance and inductance. Figure 17 demonstrates a copper layout strategy for effective thermal and electrical performance.

Figure 17. PCB Layout Strategy for Thermal Management

LT4423 Typical Application

Figure 1. USB PD 3.0 and Back-Up Battery Supply

Figure 2. LT4423 I-V CURVE

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Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
LT4423AAnalog Devices—
LT4423AVAnalog Devices—
LT4423AV#TRPBFAnalog Devices10-VFDFN Exposed Pad
LT4423SAnalog Devices—

More datasheets

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