KSC1815

The KSC1815 is an electronic component from onsemi. View the full KSC1815 datasheet below including electrical characteristics.

Manufacturer

onsemi

Overview

Part: KSC1815 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: NPN epitaxial silicon transistor designed for audio frequency amplifier and high-frequency oscillator applications, featuring a 60 V collector-base voltage and 150 mA collector current.

Operating Conditions:

Operating temperature: -55 to 150 °C
Current Gain Bandwidth Product (f_T): 80 MHz (V_CE = 10 V, I_C = 1 mA)

Absolute Maximum Ratings:

Max collector-base voltage: 60 V
Max collector current: 150 mA
Max junction/storage temperature: 150 °C

Key Specs:

Collector-Base Voltage (BV_CBO): 60 V (I_C = 1 mA, I_E = 0)
Collector-Emitter Voltage (BV_CEO): 50 V (I_C = 10 mA, I_B = 0)
Collector-Emitter Saturation Voltage (V_CE(sat)): 0.10 V (Typ), 0.25 V (Max) (I_C = 100 mA, I_B = 10 mA)
DC Current Gain (h_FE1): 120 (Min) to 240 (Max) (V_CE = 6 V, I_C = 2 mA)
Current Gain Bandwidth Product (f_T): 80 MHz (Min) (V_CE = 10 V, I_C = 1 mA)
Output Capacitance (C_ob): 2.0 pF (Typ), 3.0 pF (Max) (V_CB = 10 V, I_E = 0, f = 1 MHz)
Noise Figure (NF): 1.0 dB (Typ), 10.0 dB (Max) (V_CE = 6 V, I_C = 0.1 mA, R_S = 10 kΩ, f = 1 kHz)
Total Device Dissipation (P_D): 400 mW (T_A = 25 °C)

Features:

Complement to KSA1015
Audio Frequency Amplifier and High-Frequency OSC
Pb-Free Device

Applications:

Audio Frequency Amplifier
High-Frequency OSC

Package:

TO-92 3L

Features

Complement to KSA1015
Audio Frequency Amplifier and High-Frequency OSC
Collector-Base Voltage: VCBO = 60 V
This is a Pb-Free Device

MAXIMUM RATINGS (Values are at T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Value	Unit
V CBO	Collector-Base Voltage	60	V
V CEO	Collector-Emitter Voltage	50	V
V EBO	Emitter-Base Voltage	5	V
I C	Collector Current	150	mA
I B	Base Current	50	mA
T J	Junction Temperature	150	° C
T STG	Storage Temperature Range	-55 to 150	° C

THERMAL CHARACTERISTICS (Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

Symbol	Parameter	Max.	Unit
P D	Total Device Dissipation	400	mW
	Derate Above 25 ° C	3.2	mW/ ° C
R q JA	Thermal Resistance, Junction to Ambient	312	° C/W

THERMAL CHARACTERISTICS (Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

Emitter
Collector
Base

TO-92 3 4.83x4.76 LEADFORMED CASE 135AR

Electrical Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BV CBO	Collector-Base Voltage	I C = 1 mA, I E = 0	60	-	-	V
BV CEO	Collector-Emitter Voltage	I C = 10 mA, I B = 0	50	-	-	V
BV EBO	Emitter-Base Voltage	I E = 10 m A, I C = 0	5	-	-	V
I CBO	Collector Cut-Off Current	V CB = 60 V, I E = 0	-	-	0.1	m A
I EBO	Emitter Cut-Off Current	V EB = 5 V, I C = 0	-	-	0.1	m A
V CE (sat)	Collector-Emitter Saturation Voltage	I C = 100 mA, I B = 10 mA	-	0.10	0.25	V
V BE (sat)	Base-Emitter Saturation Voltage	I C = 100 mA, I B = 10 mA	-	-	1.0	V
h FE1	DC Current Gain	V CE = 6 V, I C = 2 mA	120	-	240
h FE2		V CE = 6 V, I C = 150 mA	25	-	-
f T	Current Gain Bandwidth Product	V CE = 10 V, I C = 1 mA	80	-	-	MHz
C ob	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz	-	2.0	3.0	pF
NF	Noise Figure	V CE = 6 V, I C = 0.1 mA, R S = 10 k W , f = 1 kHz	-	1.0	10.0	dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Related Variants

The following components are covered by the same datasheet.

Part Number	Manufacturer	Package
C1855818	—	—

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