KSC1815

NPN Epitaxial Silicon Transistor

The KSC1815 is a npn epitaxial silicon transistor from onsemi. View the full KSC1815 datasheet below including key specifications, electrical characteristics.

Official KSC1815 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

KSC1815 Key Specifications

Parameter	Value
Polarity	NPN
Base Current (IB)	50 mA
Noise Figure (NF)	10 dB max
Collector Current (IC)	150 mA
Output Capacitance (Cob)	3.0 pF max
Junction Temperature (TJ)	150 °C
Storage Temperature Range	-55 to 150 °C
Emitter-Base Voltage (VEBO)	5 V
Collector-Base Voltage (VCBO)	60 V
Total Device Dissipation (PD)	400 mW
Collector-Emitter Voltage (VCEO)	50 V
Current Gain Bandwidth Product (FT)	80 MHz min
DC Current Gain (HFE1, VCE=6V, IC=2mA)	120 to 240
DC Current Gain (HFE2, VCE=6V, IC=150mA)	25 min
Thermal Resistance Junction To Ambient (RθJA)	312 °C/W
Collector-Emitter Saturation Voltage (VCE(Sat))	0.25 V max (IC=100mA, IB=10mA)

KSC1815 Overview

Part: KSC1815 — onsemi

Type: NPN Epitaxial Silicon Transistor

Description: NPN epitaxial silicon transistor designed for audio frequency amplifier and high-frequency oscillator applications, featuring a 60 V collector-base voltage and 150 mA collector current.

Operating Conditions:

Operating temperature: -55 to 150 °C
Current Gain Bandwidth Product (f_T): 80 MHz (V_CE = 10 V, I_C = 1 mA)

Absolute Maximum Ratings:

Max collector-base voltage: 60 V
Max collector current: 150 mA
Max junction/storage temperature: 150 °C

Key Specs:

Collector-Base Voltage (BV_CBO): 60 V (I_C = 1 mA, I_E = 0)
Collector-Emitter Voltage (BV_CEO): 50 V (I_C = 10 mA, I_B = 0)
Collector-Emitter Saturation Voltage (V_CE(sat)): 0.10 V (Typ), 0.25 V (Max) (I_C = 100 mA, I_B = 10 mA)
DC Current Gain (h_FE1): 120 (Min) to 240 (Max) (V_CE = 6 V, I_C = 2 mA)
Current Gain Bandwidth Product (f_T): 80 MHz (Min) (V_CE = 10 V, I_C = 1 mA)
Output Capacitance (C_ob): 2.0 pF (Typ), 3.0 pF (Max) (V_CB = 10 V, I_E = 0, f = 1 MHz)
Noise Figure (NF): 1.0 dB (Typ), 10.0 dB (Max) (V_CE = 6 V, I_C = 0.1 mA, R_S = 10 kΩ, f = 1 kHz)
Total Device Dissipation (P_D): 400 mW (T_A = 25 °C)

Features:

Complement to KSA1015
Audio Frequency Amplifier and High-Frequency OSC
Pb-Free Device

Applications:

Audio Frequency Amplifier
High-Frequency OSC

Package:

TO-92 3L

KSC1815 Features

Complement to KSA1015
Audio Frequency Amplifier and High-Frequency OSC
Collector-Base Voltage: VCBO = 60 V
This is a Pb-Free Device

MAXIMUM RATINGS (Values are at T A = 25 ° C unless otherwise noted.)

Symbol	Parameter	Value	Unit
V CBO	Collector-Base Voltage	60	V
V CEO	Collector-Emitter Voltage	50	V
V EBO	Emitter-Base Voltage	5	V
I C	Collector Current	150	mA
I B	Base Current	50	mA
T J	Junction Temperature	150	° C
T STG	Storage Temperature Range	-55 to 150	° C

THERMAL CHARACTERISTICS (Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

Symbol	Parameter	Max.	Unit
P D	Total Device Dissipation	400	mW
	Derate Above 25 ° C	3.2	mW/ ° C
R q JA	Thermal Resistance, Junction to Ambient	312	° C/W

THERMAL CHARACTERISTICS (Values are at T A = 25 ° C unless otherwise noted.) (Note 1)

Emitter
Collector
Base

TO-92 3 4.83x4.76 LEADFORMED CASE 135AR

KSC1815 Electrical Characteristics

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BV CBO	Collector-Base Voltage	I C = 1 mA, I E = 0	60	-	-	V
BV CEO	Collector-Emitter Voltage	I C = 10 mA, I B = 0	50	-	-	V
BV EBO	Emitter-Base Voltage	I E = 10 m A, I C = 0	5	-	-	V
I CBO	Collector Cut-Off Current	V CB = 60 V, I E = 0	-	-	0.1	m A
I EBO	Emitter Cut-Off Current	V EB = 5 V, I C = 0	-	-	0.1	m A
V CE (sat)	Collector-Emitter Saturation Voltage	I C = 100 mA, I B = 10 mA	-	0.10	0.25	V
V BE (sat)	Base-Emitter Saturation Voltage	I C = 100 mA, I B = 10 mA	-	-	1.0	V
h FE1	DC Current Gain	V CE = 6 V, I C = 2 mA	120	-	240
h FE2		V CE = 6 V, I C = 150 mA	25	-	-
f T	Current Gain Bandwidth Product	V CE = 10 V, I C = 1 mA	80	-	-	MHz
C ob	Output Capacitance	V CB = 10 V, I E = 0, f = 1 MHz	-	2.0	3.0	pF
NF	Noise Figure	V CE = 6 V, I C = 0.1 mA, R S = 10 k W , f = 1 kHz	-	1.0	10.0	dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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