IRFPG40PBF

Part: IRFPG40PbF — Vishay Siliconix

Type: N-Channel Power MOSFET

Description: 1000 V, 4.3 A single N-channel power MOSFET with 3.5 Ω max RDS(on) at VGS = 10 V, in a TO-247AC package.

Operating Conditions:

• Supply voltage: not applicable
• Operating temperature: -55 to +150 °C (junction)
• Gate-source drive: VGS = 10 V for rated RDS(on)

Absolute Maximum Ratings:

• Drain-source voltage: 1000 V
• Gate-source voltage: ± 20 V
• Continuous drain current: 4.3 A (TC = 25 °C); 2.7 A (TC = 100 °C)
• Pulsed drain current: 17 A
• Max power dissipation: 150 W (TC = 25 °C)
• Operating junction and storage temperature: -55 to +150 °C

Key Specs:

• RDS(on): 3.5 Ω max (VGS = 10 V, ID = 2.6 A)
• Drain-source breakdown voltage: 1000 V min (VGS = 0 V, ID = 250 μA)
• Gate threshold voltage: 2.0–4.0 V (VDS = VGS, ID = 250 μA)
• IDSS: 100 μA max (VDS = 1000 V, VGS = 0 V); 500 μA max (VDS = 800 V, TJ = 125 °C)
• Total gate charge Qg: 120 nC max (VGS = 10 V, ID = 4.3 A, VDS = 400 V); Qgs 16 nC, Qgd 65 nC
• Capacitances: Ciss 1600 pF, Coss 170 pF, Crss 56 pF typ (VDS = 25 V, f = 1 MHz)
• Switching: td(on) 15 ns, tr 33 ns, td(off) 100 ns, tf 30 ns typ (VDD = 500 V, ID = 4.3 A, Rg = 9.1 Ω)
• Thermal resistance: RthJC 0.83 °C/W max, RthJA 40 °C/W max
• Body diode: VSD 1.8 V max (IS = 4.3 A); trr 470 ns typ, 710 ns max

Features:

• Dynamic dV/dt rated
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements

Applications:

• Commercial-industrial high-power applications where power levels preclude TO-220AB devices

Package:

• TO-247AC (3-pin, isolated central mounting hole)

• Dynamic dV/dt rated
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912