INA225AIDGKT

INA225 36-V, Programmable-Gain, Voltage-Output, Bidirectional, Zero-Drift Series, Current-Shunt Monitor

Manufacturer

Overview

Part: INA225

Type: Voltage-Output, Bidirectional, Zero-Drift Series Current-Shunt Monitor

Key Specs:

Common-Mode Range: 0 V to 36 V
Offset Voltage: ±150 μV (Max)
Gain Accuracy (Max): ±0.15% (for 25 V/V, 50 V/V)
Gain Drift: 10 ppm/°C
Bandwidth: 250 kHz (Gain = 25 V/V)
Quiescent Current: 350 μA (Max)
Operating Supply Voltage: +2.7 V to +36 V
Operating Temperature Range: -40°C to +125°C

Features:

Wide Common-Mode Range: 0 V to 36 V
Offset Voltage: ±150 μV (Max, All Gains)
Offset Voltage Drift: 0.5 μV/°C (Max)
Gain Accuracy, Over Temperature (Max): 25 V/V, 50 V/V: ±0.15%; 100 V/V: ±0.2%; 200 V/V: ±0.3%
10-ppm/°C Gain Drift
250-kHz Bandwidth (Gain = 25 V/V)
Programmable Gains: G1 = 25 V/V, G2 = 50 V/V, G3 = 100 V/V, G4 = 200 V/V
Quiescent Current: 350 μA (Max)
Bidirectional current-shunt monitor
Allows external reference
Low-offset, zero-drift architecture
Precision gain values

Applications:

Power Supplies
Motor Control
Computers
Telecom Equipment
Power Management
Test and Measurement

Package:

MSOP-8: No dimensions specified

Features

Wide Common-Mode Range: 0 V to 36 V

Offset Voltage: ±150 μV (Max, All Gains)

Offset Voltage Drift: 0.5 μV/°C (Max)

Gain Accuracy, Over Temperature (Max):

25 V/V, 50 V/V: ±0.15%

100 V/V: ±0.2%

200 V/V: ±0.3%

10-ppm/°C Gain Drift

250-kHz Bandwidth (Gain = 25 V/V)

Programmable Gains:

G1 = 25 V/V
G2 = 50 V/V

G3 = 100 V/V

– G4 = 200 V/V

Quiescent Current: 350 μA (Max)

Package: MSOP-8

Applications

Power Supplies

Motor Control

Computers

Telecom Equipment

Power Management

Test and Measurement

Electrical Characteristics

At T^A = +25°C, VSENSE = VIN+ – VIN– , V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
INPUT
VCM	Common-mode input range	TA = –40°C to +125°C	0		36	V
CMR	Common-mode rejection	VIN+ = 0 V to +36 V, VSENSE = 0 mV, TA = –40°C to +125°C	95	105		dB
VOS	Offset voltage, RTI(1)	VSENSE = 0 mV		±75	±150	μV
dVOS/dT	RTI vs temperature	TA = –40°C to +125°C		0.2	0.5	μV/°C
PSRR	Power-supply rejection ratio	VSENSE = 0 mV, VREF = 2.5 V, VS = 2.7 V to 36 V		±0.1	±1	μV/V
IB	Input bias current	VSENSE = 0 mV	55	72	85	μA
IOS	Input offset current	VSENSE = 0 mV		±0.5		μA
VREF	Reference input range	TA = –40°C to +125°C	0		VS	V
OUTPUT
G	Gain			25, 50, 100, 200		V/V
		Gain = 25 V/V and 50 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.05%	±0.15%
EG	Gain error	Gain = 100 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.2%
		Gain = 200 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.3%
	Gain error vs temperature	G = 25 V/V, 50 V/V, 100 V/V, TA = –40°C to +125°C		3	10	ppm/°C
		G = 200 V/V, TA = –40°C to +125°C		5	15
	Nonlinearity error	VOUT = 0.5 V to VS – 0.5 V		±0.01%
	Maximum capacitive load	No sustained oscillation		1		nF
	VOLTAGE OUTPUT(2)
	Swing to VS power-supply rail	RL = 10 kΩ to GND, TA = –40°C to +125°C		VS – 0.05	VS – 0.2	V
		VREF = VS / 2, all gains, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 5	VGND + 10	mV
		VREF = GND, gain = 25 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 7		mV
	Swing to GND(3)	VREF = GND, gain = 50 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 15		mV
		VREF = GND, gain = 100 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 30		mV
		VREF = GND, gain = 200 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 60		mV
	FREQUENCY RESPONSE
		Gain = 25 V/V, CLOAD = 10 pF		250		kHz
		Gain = 50 V/V, CLOAD = 10 pF		200		kHz
BW	Bandwidth	Gain = 100 V/V, CLOAD = 10 pF		125		kHz
		Gain = 200 V/V, CLOAD = 10 pF		70		kHz
SR	Slew rate			0.4		V/μs
NOISE, RTI(1)
	Voltage noise density			50		nV/√Hz

⁽¹⁾ RTI = referred-to-input.

⁽²⁾ See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).

⁽³⁾ See Typical Characteristic curve, Unidirectional Output Voltage Swing vs. Temperature (Figure 14)

Absolute Maximum Ratings

Over operating free-air temperature range, unless otherwise noted.

		MIN	MAX	UNIT
Supply voltage		+40	V
(2) Analog inputs, VIN+, VIN–	Differential (VIN+) – (VIN–)	–40	+40	V
	Common-mode(3)	GND – 0.3	+40	V
REF, GS0, and GS1 inputs				V
Output		GND – 0.3	(VS) + 0.3	V
	Operating, TA	–55	+150	°C
Temperature	Junction, TJ		+150	°C

⁽¹⁾ Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) VIN+ and VIN– are the voltages at the IN+ and IN– terminals, respectively.

6.2 Handling Ratings

		MIN	MAX	UNIT
TSTG	Storage temperature range	–65	+150	°C
(1)	Human body model (HBM) stress voltage(2)		4	kV
VESD	Charged device model (CDM) stress voltage(3)		1	kV

⁽¹⁾ Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.

6.3 Recommended Operating Conditions

Over operating free-air temperature range, unless otherwise noted.

		MIN	NOM	MAX	UNIT
VCM	Common-mode input voltage		12		V
VS	Operating supply voltage		5		V
TA	Operating free-air temperature	–40		+125	°C

6.4 Thermal Information

		INA225
	THERMAL METRIC	DGK (MSOP)
		8 TERMINALS
θJA	Junction-to-ambient thermal resistance	163.6
θJCtop	Junction-to-case (top) thermal resistance	57.7
θJB	Junction-to-board thermal resistance	84.7
ψJT	Junction-to-top characterization parameter	6.5
ψJB	Junction-to-board characterization parameter	83.2
θJCbot	Junction-to-case (bottom) thermal resistance	N/A
⁽³⁾ Input voltage at any terminal may exceed the voltage shown if the current at that terminal is limited to 5 mA.

⁽²⁾ Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 4-kV HBM allows safe manufacturing with a standard ESD control process.

⁽³⁾ Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 1-kV CDM allows safe manufacturing with a standard ESD control process.

6.5 Electrical Characteristics

At T^A = +25°C, VSENSE = VIN+ – VIN– , V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
INPUT
VCM	Common-mode input range	TA = –40°C to +125°C	0		36	V
CMR	Common-mode rejection	VIN+ = 0 V to +36 V, VSENSE = 0 mV, TA = –40°C to +125°C	95	105		dB
VOS	Offset voltage, RTI(1)	VSENSE = 0 mV		±75	±150	μV
dVOS/dT	RTI vs temperature	TA = –40°C to +125°C		0.2	0.5	μV/°C
PSRR	Power-supply rejection ratio	VSENSE = 0 mV, VREF = 2.5 V, VS = 2.7 V to 36 V		±0.1	±1	μV/V
IB	Input bias current	VSENSE = 0 mV	55	72	85	μA
IOS	Input offset current	VSENSE = 0 mV		±0.5		μA
VREF	Reference input range	TA = –40°C to +125°C	0		VS	V
OUTPUT
G	Gain			25, 50, 100, 200		V/V
		Gain = 25 V/V and 50 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.05%	±0.15%
EG	Gain error	Gain = 100 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.2%
		Gain = 200 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.3%
	Gain error vs temperature	G = 25 V/V, 50 V/V, 100 V/V, TA = –40°C to +125°C		3	10	ppm/°C
		G = 200 V/V, TA = –40°C to +125°C		5	15
	Nonlinearity error	VOUT = 0.5 V to VS – 0.5 V		±0.01%
	Maximum capacitive load	No sustained oscillation		1		nF
	VOLTAGE OUTPUT(2)
	Swing to VS power-supply rail	RL = 10 kΩ to GND, TA = –40°C to +125°C		VS – 0.05	VS – 0.2	V
		VREF = VS / 2, all gains, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 5	VGND + 10	mV
		VREF = GND, gain = 25 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 7		mV
	Swing to GND(3)	VREF = GND, gain = 50 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 15		mV
		VREF = GND, gain = 100 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 30		mV
		VREF = GND, gain = 200 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 60		mV
	FREQUENCY RESPONSE
		Gain = 25 V/V, CLOAD = 10 pF		250		kHz
		Gain = 50 V/V, CLOAD = 10 pF		200		kHz
BW	Bandwidth	Gain = 100 V/V, CLOAD = 10 pF		125		kHz
		Gain = 200 V/V, CLOAD = 10 pF		70		kHz
SR	Slew rate			0.4		V/μs
NOISE, RTI(1)
	Voltage noise density			50		nV/√Hz

⁽¹⁾ RTI = referred-to-input.

⁽²⁾ See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).

⁽³⁾ See Typical Characteristic curve, Unidirectional Output Voltage Swing vs. Temperature (Figure 14)

Electrical Characteristics (continued)

At T^A = +25°C, VSENSE = VIN+ – VIN– , V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

	PARAMETER		CONDITIONS	MIN	TYP	MAX	UNIT
	DIGITAL INPUT
Ci	Input capacitance				3		pF
	Leakage input current		0 ≤ VIN ≤ VS		1	2	μA
VIL	Low-level input logic level			0		0.6	V
VIH		High-level input logic level		2		VS	V
	POWER SUPPLY
VS	Operating voltage range		TA = –40°C to +125°C	+2.7		+36	V
IQ	Quiescent current		VSENSE = 0 mV		300	350	μA
	IQ over temperature		TA = –40°C to +125°C			375	μA
	TEMPERATURE RANGE
	Specified range			–40		+125	°C
	Operating range			–55		+150	°C

6.6 Typical Characteristics

At T^A = +25°C, V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

(Gain = 50 V/V, 2-VPP Output Step) (Gain = 100 V/V, 2-VPP Output Step)

At T^A = +25°C, V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

(Gain = 100 V/V to 200 V/V) (Gain = 50 V/V to 25 V/V)

At T^A = +25°C, V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

Figure 31. Gain Change Output Response From Saturation Figure 32. Gain Change Output Response From Saturation (Gain = 100 V/V to 25 V/V) (Gain = 200 V/V to 50 V/V)

Figure 33. Gain Change Output Response From Saturation Figure 34. Common-Mode Voltage Transient Response (Gain = 200 V/V to 100 V/V)

Figure 35. Start-Up Response

Recommended Operating Conditions

Over operating free-air temperature range, unless otherwise noted.

		MIN	NOM	MAX	UNIT
VCM	Common-mode input voltage		12		V
VS	Operating supply voltage		5		V
TA	Operating free-air temperature	–40		+125	°C

Thermal Information

		INA225
	THERMAL METRIC	DGK (MSOP)
		8 TERMINALS
θJA	Junction-to-ambient thermal resistance	163.6
θJCtop	Junction-to-case (top) thermal resistance	57.7
θJB	Junction-to-board thermal resistance	84.7
ψJT	Junction-to-top characterization parameter	6.5
ψJB	Junction-to-board characterization parameter	83.2
θJCbot	Junction-to-case (bottom) thermal resistance	N/A
⁽³⁾ Input voltage at any terminal may exceed the voltage shown if the current at that terminal is limited to 5 mA.

⁽²⁾ Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 4-kV HBM allows safe manufacturing with a standard ESD control process.

⁽³⁾ Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 1-kV CDM allows safe manufacturing with a standard ESD control process.

6.5 Electrical Characteristics

At T^A = +25°C, VSENSE = VIN+ – VIN– , V^S = +5 V, VIN+ = 12 V, and VREF = V^S / 2, unless otherwise noted.

	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
INPUT
VCM	Common-mode input range	TA = –40°C to +125°C	0		36	V
CMR	Common-mode rejection	VIN+ = 0 V to +36 V, VSENSE = 0 mV, TA = –40°C to +125°C	95	105		dB
VOS	Offset voltage, RTI(1)	VSENSE = 0 mV		±75	±150	μV
dVOS/dT	RTI vs temperature	TA = –40°C to +125°C		0.2	0.5	μV/°C
PSRR	Power-supply rejection ratio	VSENSE = 0 mV, VREF = 2.5 V, VS = 2.7 V to 36 V		±0.1	±1	μV/V
IB	Input bias current	VSENSE = 0 mV	55	72	85	μA
IOS	Input offset current	VSENSE = 0 mV		±0.5		μA
VREF	Reference input range	TA = –40°C to +125°C	0		VS	V
OUTPUT
G	Gain			25, 50, 100, 200		V/V
		Gain = 25 V/V and 50 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.05%	±0.15%
EG	Gain error	Gain = 100 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.2%
		Gain = 200 V/V, VOUT = 0.5 V to VS – 0.5 V, TA = –40°C to +125°C		±0.1%	±0.3%
	Gain error vs temperature	G = 25 V/V, 50 V/V, 100 V/V, TA = –40°C to +125°C		3	10	ppm/°C
		G = 200 V/V, TA = –40°C to +125°C		5	15
	Nonlinearity error	VOUT = 0.5 V to VS – 0.5 V		±0.01%
	Maximum capacitive load	No sustained oscillation		1		nF
	VOLTAGE OUTPUT(2)
	Swing to VS power-supply rail	RL = 10 kΩ to GND, TA = –40°C to +125°C		VS – 0.05	VS – 0.2	V
		VREF = VS / 2, all gains, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 5	VGND + 10	mV
		VREF = GND, gain = 25 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 7		mV
	Swing to GND(3)	VREF = GND, gain = 50 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 15		mV
		VREF = GND, gain = 100 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 30		mV
		VREF = GND, gain = 200 V/V, RL = 10 kΩ to GND, TA = –40°C to +125°C		VGND + 60		mV
	FREQUENCY RESPONSE
		Gain = 25 V/V, CLOAD = 10 pF		250		kHz
		Gain = 50 V/V, CLOAD = 10 pF		200		kHz
BW	Bandwidth	Gain = 100 V/V, CLOAD = 10 pF		125		kHz
		Gain = 200 V/V, CLOAD = 10 pF		70		kHz
SR	Slew rate			0.4		V/μs
NOISE, RTI(1)
	Voltage noise density			50		nV/√Hz

⁽¹⁾ RTI = referred-to-input.

⁽²⁾ See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10).

⁽³⁾ See Typical Characteristic curve, Unidirectional Output Voltage Swing vs. Temperature (Figure 14)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free