FAN7888
Half-Bridge Gate-Drive ICThe FAN7888 is a half-bridge gate-drive ic from onsemi. View the full FAN7888 datasheet below including key specifications, absolute maximum ratings.
Official FAN7888 datasheet (PDF) — the source this page was extracted from.
FAN7888 Key Specifications
| Parameter | Value |
|---|---|
| Dead Time (Typ) | 270 ns |
| Number Of Channels | 3 half-bridges (6 outputs) |
| Supply Voltage (VDD) | 10 V to 20 V |
| Logic Input Compatibility | 3.3 V and 5 V |
| Operating Temperature Range | -40 °C to +125 °C |
| Turn-On Propagation Delay (Typ) | 130 ns |
| Output Source/Sink Current (Typ) | 350 mA / 650 mA |
| Propagation Delay Matching (Max) | 50 ns |
| Turn-Off Propagation Delay (Typ) | 150 ns |
| Allowable Negative VS Swing (Typ) | -9.8 V |
| Quiescent VDD Supply Current (Typ) | 160 uA |
| High-Side Floating Supply Voltage (VB) | VS + 10 V to VS + 20 V |
| Allowable Offset Voltage Slew Rate (Max) | 50 V/ns |
| High-Side Floating Offset Voltage (VS) Max | 200 V |
| UVLO Threshold VDD/VBS Positive-Going (Typ) | 8.2 V |
FAN7888 Overview
Part: FAN7888MX — onsemi
Type: 3-Phase Half-Bridge Gate Driver
Description: Monolithic three half-bridge gate-driver IC for MOSFETs and IGBTs with floating high-side channels up to +200 V, 350 mA / 650 mA typical source/sink current, and 270 ns typical built-in dead time.
Operating Conditions:
- Supply voltage (VDD): 10–20 V
- High-side floating supply (VB): VS + 10 V to VS + 20 V
- VS offset voltage: 6 − VDD to 200 V
- Operating temperature: -40 to +125 °C
Absolute Maximum Ratings:
- Max VB (high-side floating supply): 225 V
- Max VDD: 25 V
- Max logic input voltage: VDD + 0.3 V
- Max offset voltage slew rate (dVS/dt): 50 V/ns
- Max power dissipation: 1.47 W
- Max junction temperature: +150 °C
- Storage temperature: -55 to +150 °C
Key Specs:
- Quiescent VDD current: 160 μA typ, 350 μA max (VLIN = 0 V or 5 V)
- Quiescent VBS current per channel: 50 μA typ, 120 μA max
- UVLO thresholds (VDD and VBS): 8.2 V typ positive-going (7.2–9.0 V), 7.8 V typ negative-going (6.8–8.5 V), 0.4 V typ hysteresis
- Output short-circuit pulsed current: IO+ 250 mA min / 350 mA typ; IO- 500 mA min / 650 mA typ
- Propagation delay (CLoad = 1000 pF, VS = 0 V): tON 130 ns typ (220 ns max); tOFF 150 ns typ (240 ns max)
- Rise/fall time: tR 50 ns typ (120 ns max); tF 30 ns typ (80 ns max)
- Delay matching: 50 ns max; dead time 100/270/440 ns (min/typ/max); dead-time matching 60 ns max
- Logic thresholds: VIH 2.5 V min, VIL 1.0 V max; input pull-down resistance 200 kΩ typ
- Allowable negative VS for signal propagation: -9.8 V typ (-7.0 V max)
Features:
- Typically 350 mA / 650 mA source/sink drive capability on all channels
- Floating channels for bootstrap operation up to +200 V
- Three half-bridge gate drivers
- Matched propagation delay, 50 ns max
- Extended negative VS swing to -9.8 V at VBS = 15 V
- 3.3 V and 5 V input logic compatible
- Built-in common-mode dv/dt noise canceling circuit
- Built-in shoot-through prevention with 270 ns typical dead time
- Built-in UVLO on all channels
- Pb-free, halide-free, RoHS compliant
Applications:
- 3-phase motor inverter drivers
- Battery-based motor applications (E-bike, power tools)
Package:
- SOIC-20, 300 mils (CASE 751BJ-01), 1000 units per tape and reel
FAN7888 Features
- Typically 350 mA / 650 mA Sourcing/Sinking Current Driving Capability for All Channels
- Floating Channel for Bootstrap Operation to +200 V
- 3 Half -Bridge Gate Driver
- Matched Propagation Delay Time Maximum: 50 ns
- Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at V BS = 15 V
- 3.3 V and 5 V Input Logic Compatible
- Built -in Common Mode dv/dt Noise Canceling Circuit
- Built -in Shoot -Through Prevention Circuit for All Channels with 270 ns Typical Dead Time
- Built -in UVLO Functions for All Channels
- This Device is Pb -Free, Halide Free and is RoHS Compliant
FAN7888 Applications
- 3 -Phase Motor Inverter Driver
- Battery Based Motor Applications (E -bike, Power Tool)
FAN7888 Pin Configuration
Figure 3. Pin Configuration (Top View)
FAN7888 Absolute Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
|---|---|---|---|---|
| V B | High - Side Floating Supply Voltage of V B1,2,3 | - 0.3 | 225.0 | V |
| V S | High - Side Floating Supply Offset Voltage of V S1,2,3 | V B1,2,3 - 25 | V B1,2,3 + 0.3 | V |
| V HO1,2,3 | High - Side Floating Output Voltage | V S1,2,3 - 0.3 | V B1,2,3 + 0.3 | V |
| V DD | Low - Side and Logic - fixed Supply Voltage | - 0.3 | 25.0 | V |
| V LO1,2,3 | Low - Side Output Voltage | - 0.3 | V DD + 0.3 | V |
| V IN | Logic Input Voltage (HIN1,2,3 and LIN1,2,3) | - 0.3 | V DD + 0.3 | V |
| dV S /dt | Allowable Offset Voltage Slew Rate | - | 50 | V/ns |
| P D | Power Dissipation (Note 1) (Note 2) (Note 3) | - | 1.47 | W |
| q JA | Thermal Resistance, Junction - to - ambient | - | 85 | ° C/W |
| T J | Junction Temperature | - | +150 | ° C |
| T STG | Storage Temperature | - 55 | +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
-
Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR -4 glass epoxy material).
Refer to the following standards: JESD51 -2: Integral circuits thermal test method environmental conditions -natural convection. JESD51 -3: Low effective thermal conductivity test board for leaded surface -mount packages.
- Do not exceed P D under any circumstances.
FAN7888 Recommended Operating Conditions
| Symbol | Parameter | Min | Max | Unit |
|---|---|---|---|---|
| V B1,2,3 | High - Side Floating Supply Voltage | V S1,2,3 + 10 | V S1,2,3 + 20 | V |
| V S1,2,3 | High - Side Floating Supply Offset Voltage | 6 - V DD | 200 | V |
| V DD | Supply Voltage | 10 | 20 | V |
| V HO1,2,3 | High - Side Output Voltage | V S1,2,3 | V B1,2,3 | V |
| V LO1,2,3 | Low - Side Output Voltage | GND | V DD | V |
| V IN | Logic Input Voltage (HIN1,2,3 and LIN1,2,3) | GND | V DD | V |
| T A | Ambient Temperature | - 40 | +125 | ° C |
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS (V BIAS (V DD , V BS1,2,3 ) = 15.0 V, T A = 25 ° C, unless otherwise specified. The V IN and I IN parameters are referenced to GND. The V O and I O parameters are referenced to GND and V S1,2,3 and are applicable to the respective outputs LO1,2,3 and HO1,2,3.)
| Symbol | Characteristics | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION |
| I QDD | Quiescent V DD Supply Current | V LIN1,2,3 = 0 V or 5 V | - | 160 | 350 | m A |
| I PDD1,2,3 | Operating V DD Supply Current for each Channel | f LIN1,2,3 = 20 kHz, rms Value | - | 500 | 900 | m A |
| V DDUV+ | V DD Supply Under - Voltage Positive - Going Threshold | V DD = Sweep, V BS = 15 V | 7.2 | 8.2 | 9.0 | V |
| V DDUV - | V DD Supply Under - Voltage Negative - Going Threshold | V DD = Sweep, V BS = 15 V | 6.8 | 7.8 | 8.5 | V |
| V DDHYS | V DD Supply Under - Voltage Lockout Hysteresis | V DD = Sweep, V BS = 15 V | - | 0.4 | - | V |
| BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION |
| I QBS1,2,3 | Quiescent V BS Supply Current for each Channel | V HIN1,2,3 = 0 V or 5 V | - | 50 | 120 | m A |
| I PBS1,2,3 | Operating V BS Supply Current for each Channel | f HIN1,2,3 = 20 kHz, rms Value | - | 400 | 800 | m A |
| V BSUV+ | V BS Supply Under - Voltage Positive - going Threshold | V DD = 15 V, V BS = Sweep | 7.2 | 8.2 | 9.0 | V |
| V BSUV - | V BS Supply Under - Voltage Negative - going Threshold | V DD = 15 V, V BS = Sweep | 6.8 | 7.8 | 8.5 | V |
| V BSHYS | V BS Supply Under - Voltage Lockout Hysteresis | V DD = 15 V, V BS = Sweep | - | 0.4 | - | V |
| I LK | Offset Supply Leakage Current | V B1,2,3 = V S1,2,3 = 200 V | - | - | 10 | m A |
| GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION |
| V OH | High - Level Output Voltage, V BIAS - V O | I O =20 mA | - | - | 1.0 | V |
| V OL | Low - Level Output Voltage, V O | I O =20 mA | - | - | 0.6 | V |
| I O+ | Output HIGH Short - Circuit Pulsed Current (Note 4) | V O = 0 V, V IN = 5 V with PW < 10 m s | 250 | 350 | - | mA |
| I O - | Output LOW Short - Circuit Pulsed Current (Note 4) | V O = 15 V, V IN = 0 V with PW < 10 m s | 500 | 650 | - | mA |
| V S | Allowable Negative V S Pin Voltage for IN Signal Propagation to H O | - | - 9.8 | - 7.0 | V | |
| LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) |
| V IH | Logic '1' Input Voltage | 2.5 | - | - | V | |
| V IL | Logic '0' Input Voltage | - | - | 1.0 | V | |
| I IN+ | Logic '1' Input Bias Current | V IN = 5 V | - | 25 | 50 | m A |
| I IN - | Logic '0' Input Bias Current (Note 4) | V IN = 0 V | - | - | 2.0 | m A |
| R IN | Input Pull - Down Resistance | 100 | 200 | 300 | k W |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- This parameter is guaranteed by design.
DYNAMIC ELECTRICAL CHARACTERISTICS (T A = 25 ° C, V BIAS (V DD , V BS1,2,3 ) = 15.0 V, V S1,2,3 = GND, C Load = 1000 pF unless otherwise specified.)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| t ON | Turn - on Propagation Delay | V S1,2,3 = 0 V | - | 130 | 220 | ns |
| t OFF | Turn - off Propagation Delay | V S1,2,3 = 0 V | - | 150 | 240 | ns |
| t R | Turn - on Rise Time | - | 50 | 120 | ns | |
| t F | Turn - off Fall Time | - | 30 | 80 | ns | |
| MT1 | Turn - on Delay Matching I t ON(H) - t OFF(L) I | - | - | 50 | ns | |
| MT2 | Turn - off Delay Matching I t OFF(H) - t ON(L) I | - | - | 50 | ns | |
| DT | Dead Time | 100 | 270 | 440 | ns | |
| MDT | Dead - time Matching I t DT1 - t DT2 I | - | - | 60 | ns |
FAN7888 Typical Application
Figure 1. 3 -Phase BLDC Motor Drive Application
Variants on the same datasheet
These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.
| Part Number | Manufacturer | Package |
|---|---|---|
| FAN7888MX | onsemi | SOIC-20 |
Other Motor Drivers
- DRV8833 – Texas Instruments, Dual H-Bridge Motor Driver
- DRV8876 – Texas Instruments, H-Bridge Motor Driver
- TB6612FNG – Toshiba, Driver IC for Dual DC motor
- A4988 – Allegro MicroSystems, Stepper Motor Driver Module
- DRV2605YZFR.A – Texas Instruments, Haptic Driver
- DRV2605YZFT.A – Texas Instruments, Haptic Driver
- DRV8302 – Texas Instruments, Three-Phase Gate Driver with Dual Shunt Amplifiers and Buck Regulator
- DRV8302DCA – Texas Instruments, Three-Phase Gate Driver with Dual Shunt Amplifiers and Buck Regulator
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