FAN7888
Half-Bridge Gate-Drive ICThe FAN7888 is a half-bridge gate-drive ic from onsemi. View the full FAN7888 datasheet below including absolute maximum ratings.
Manufacturer
onsemi
Category
Half-Bridge Gate-Drive IC
Overview
Part: FAN7888MX — onsemi
Type: Half-Bridge Gate-Drive IC
Description: Monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200 V, with typically 350 mA / 650 mA sourcing/sinking current driving capability.
Operating Conditions:
- Supply voltage: 10–20 V (VDD)
- Operating temperature: -40 to +125 °C
- High-side floating supply offset voltage: 6-VDD to 200 V
Absolute Maximum Ratings:
- Max supply voltage (High-Side Floating): 225.0 V
- Max supply voltage (Low-Side and Logic): 25.0 V
- Max junction temperature: +150 °C
- Max storage temperature: +150 °C
Key Specs:
- Quiescent VDD Supply Current (IQDD): 160 mA (typ), 350 mA (max)
- Output HIGH Short-Circuit Pulsed Current (IO+): 350 mA (typ)
- Output LOW Short-Circuit Pulsed Current (IO-): 650 mA (typ)
- VDD Supply Under-Voltage Positive-Going Threshold (VDDUV+): 8.2 V (typ)
- Logic '1' Input Voltage (VIH): 2.5 V (min)
- Turn-on Propagation Delay (tON): 130 ns (typ), 220 ns (max)
- Turn-off Propagation Delay (tOFF): 150 ns (typ), 240 ns (max)
- Dead Time (DT): 270 ns (typ), 440 ns (max)
Features:
- Typically 350 mA / 650 mA Sourcing/Sinking Current Driving Capability for All Channels
- Floating Channel for Bootstrap Operation to +200 V
- 3 Half-Bridge Gate Driver
- Matched Propagation Delay Time Maximum: 50 ns
- Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at VBS = 15 V
- 3.3 V and 5 V Input Logic Compatible
- Built-in Common Mode dv/dt Noise Canceling Circuit
- Built-in Shoot-Through Prevention Circuit for All Channels with 270 ns Typical Dead Time
- Built-in UVLO Functions for All Channels
- Pb-Free, Halide Free and RoHS Compliant
Applications:
- 3-Phase Motor Inverter Driver
- Battery Based Motor Applications (E-bike, Power Tool)
Package:
- SOIC-20, 300 mils
Features
- Typically 350 mA / 650 mA Sourcing/Sinking Current Driving Capability for All Channels
- Floating Channel for Bootstrap Operation to +200 V
- 3 Half -Bridge Gate Driver
- Matched Propagation Delay Time Maximum: 50 ns
- Extended Allowable Negative VS Swing to -9.8 V for Signal Propagation at V BS = 15 V
- 3.3 V and 5 V Input Logic Compatible
- Built -in Common Mode dv/dt Noise Canceling Circuit
- Built -in Shoot -Through Prevention Circuit for All Channels with 270 ns Typical Dead Time
- Built -in UVLO Functions for All Channels
- This Device is Pb -Free, Halide Free and is RoHS Compliant
Applications
- 3 -Phase Motor Inverter Driver
- Battery Based Motor Applications (E -bike, Power Tool)
Pin Configuration
Figure 3. Pin Configuration (Top View)
Absolute Maximum Ratings
| Symbol | Parameter | Min | Max | Unit |
|---|---|---|---|---|
| V B | High - Side Floating Supply Voltage of V B1,2,3 | - 0.3 | 225.0 | V |
| V S | High - Side Floating Supply Offset Voltage of V S1,2,3 | V B1,2,3 - 25 | V B1,2,3 + 0.3 | V |
| V HO1,2,3 | High - Side Floating Output Voltage | V S1,2,3 - 0.3 | V B1,2,3 + 0.3 | V |
| V DD | Low - Side and Logic - fixed Supply Voltage | - 0.3 | 25.0 | V |
| V LO1,2,3 | Low - Side Output Voltage | - 0.3 | V DD + 0.3 | V |
| V IN | Logic Input Voltage (HIN1,2,3 and LIN1,2,3) | - 0.3 | V DD + 0.3 | V |
| dV S /dt | Allowable Offset Voltage Slew Rate | - | 50 | V/ns |
| P D | Power Dissipation (Note 1) (Note 2) (Note 3) | - | 1.47 | W |
| q JA | Thermal Resistance, Junction - to - ambient | - | 85 | ° C/W |
| T J | Junction Temperature | - | +150 | ° C |
| T STG | Storage Temperature | - 55 | +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
-
Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR -4 glass epoxy material).
Refer to the following standards: JESD51 -2: Integral circuits thermal test method environmental conditions -natural convection. JESD51 -3: Low effective thermal conductivity test board for leaded surface -mount packages.
- Do not exceed P D under any circumstances.
Recommended Operating Conditions
| Symbol | Parameter | Min | Max | Unit |
|---|---|---|---|---|
| V B1,2,3 | High - Side Floating Supply Voltage | V S1,2,3 + 10 | V S1,2,3 + 20 | V |
| V S1,2,3 | High - Side Floating Supply Offset Voltage | 6 - V DD | 200 | V |
| V DD | Supply Voltage | 10 | 20 | V |
| V HO1,2,3 | High - Side Output Voltage | V S1,2,3 | V B1,2,3 | V |
| V LO1,2,3 | Low - Side Output Voltage | GND | V DD | V |
| V IN | Logic Input Voltage (HIN1,2,3 and LIN1,2,3) | GND | V DD | V |
| T A | Ambient Temperature | - 40 | +125 | ° C |
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS (V BIAS (V DD , V BS1,2,3 ) = 15.0 V, T A = 25 ° C, unless otherwise specified. The V IN and I IN parameters are referenced to GND. The V O and I O parameters are referenced to GND and V S1,2,3 and are applicable to the respective outputs LO1,2,3 and HO1,2,3.)
| Symbol | Characteristics | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION | LOW - SIDE POWER SUPPLY SECTION |
| I QDD | Quiescent V DD Supply Current | V LIN1,2,3 = 0 V or 5 V | - | 160 | 350 | m A |
| I PDD1,2,3 | Operating V DD Supply Current for each Channel | f LIN1,2,3 = 20 kHz, rms Value | - | 500 | 900 | m A |
| V DDUV+ | V DD Supply Under - Voltage Positive - Going Threshold | V DD = Sweep, V BS = 15 V | 7.2 | 8.2 | 9.0 | V |
| V DDUV - | V DD Supply Under - Voltage Negative - Going Threshold | V DD = Sweep, V BS = 15 V | 6.8 | 7.8 | 8.5 | V |
| V DDHYS | V DD Supply Under - Voltage Lockout Hysteresis | V DD = Sweep, V BS = 15 V | - | 0.4 | - | V |
| BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION | BOOTSTRAPPED POWER SUPPLY SECTION |
| I QBS1,2,3 | Quiescent V BS Supply Current for each Channel | V HIN1,2,3 = 0 V or 5 V | - | 50 | 120 | m A |
| I PBS1,2,3 | Operating V BS Supply Current for each Channel | f HIN1,2,3 = 20 kHz, rms Value | - | 400 | 800 | m A |
| V BSUV+ | V BS Supply Under - Voltage Positive - going Threshold | V DD = 15 V, V BS = Sweep | 7.2 | 8.2 | 9.0 | V |
| V BSUV - | V BS Supply Under - Voltage Negative - going Threshold | V DD = 15 V, V BS = Sweep | 6.8 | 7.8 | 8.5 | V |
| V BSHYS | V BS Supply Under - Voltage Lockout Hysteresis | V DD = 15 V, V BS = Sweep | - | 0.4 | - | V |
| I LK | Offset Supply Leakage Current | V B1,2,3 = V S1,2,3 = 200 V | - | - | 10 | m A |
| GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION | GATE DRIVER OUTPUT SECTION |
| V OH | High - Level Output Voltage, V BIAS - V O | I O =20 mA | - | - | 1.0 | V |
| V OL | Low - Level Output Voltage, V O | I O =20 mA | - | - | 0.6 | V |
| I O+ | Output HIGH Short - Circuit Pulsed Current (Note 4) | V O = 0 V, V IN = 5 V with PW < 10 m s | 250 | 350 | - | mA |
| I O - | Output LOW Short - Circuit Pulsed Current (Note 4) | V O = 15 V, V IN = 0 V with PW < 10 m s | 500 | 650 | - | mA |
| V S | Allowable Negative V S Pin Voltage for IN Signal Propagation to H O | - | - 9.8 | - 7.0 | V | |
| LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) | LOGIC INPUT SECTION (HIN, LIN) |
| V IH | Logic '1' Input Voltage | 2.5 | - | - | V | |
| V IL | Logic '0' Input Voltage | - | - | 1.0 | V | |
| I IN+ | Logic '1' Input Bias Current | V IN = 5 V | - | 25 | 50 | m A |
| I IN - | Logic '0' Input Bias Current (Note 4) | V IN = 0 V | - | - | 2.0 | m A |
| R IN | Input Pull - Down Resistance | 100 | 200 | 300 | k W |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- This parameter is guaranteed by design.
DYNAMIC ELECTRICAL CHARACTERISTICS (T A = 25 ° C, V BIAS (V DD , V BS1,2,3 ) = 15.0 V, V S1,2,3 = GND, C Load = 1000 pF unless otherwise specified.)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| t ON | Turn - on Propagation Delay | V S1,2,3 = 0 V | - | 130 | 220 | ns |
| t OFF | Turn - off Propagation Delay | V S1,2,3 = 0 V | - | 150 | 240 | ns |
| t R | Turn - on Rise Time | - | 50 | 120 | ns | |
| t F | Turn - off Fall Time | - | 30 | 80 | ns | |
| MT1 | Turn - on Delay Matching I t ON(H) - t OFF(L) I | - | - | 50 | ns | |
| MT2 | Turn - off Delay Matching I t OFF(H) - t ON(L) I | - | - | 50 | ns | |
| DT | Dead Time | 100 | 270 | 440 | ns | |
| MDT | Dead - time Matching I t DT1 - t DT2 I | - | - | 60 | ns |
Typical Application
Figure 1. 3 -Phase BLDC Motor Drive Application
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| FAN7888MX | onsemi | SOIC-20 |
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