EFR32BG22C224F512GM32-CR
The EFR32BG22C224F512GM32-CR is an electronic component from Silicon Labs. View the full EFR32BG22C224F512GM32-CR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Silicon Labs
Category
RF and Wireless
Package
32-VFQFN Exposed Pad
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Current - Receiving | 3.6mA ~ 4.5mA |
| Current - Transmitting | 4.1mA ~ 8.5mA |
| Data Rate (Max) | 2Mbps |
| DigiKey Programmable | Not Verified |
| Frequency | 2.4GHz ~ 2.4835GHz |
| GPIO | 18 |
| Memory Size | 512kB Flash, 32kB RAM |
| Modulation | 2FSK, DSSS, GFSK, GMSK, MSK, OQPSK |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 32-VFQFN Exposed Pad |
| Power - Output | 6dBm |
| Protocol | Bluetooth v5.2 |
| RF Family/Standard | Bluetooth |
| Sensitivity | -106.7dBm |
| Serial Interfaces | ADC, I2C, I2S, PWM, SPI, IrDA, UART, USART |
| Supplier Device Package | 32-QFN (4x4) |
| Type | TxRx + MCU |
| Supply Voltage | 1.71V ~ 3.8V |
Overview
Part: EFR32BG1 Blue Gecko Bluetooth Low Energy SoC Family — Silicon Labs
Type: Wireless System-on-Chip (SoC)
Description: A 32-bit ARM Cortex-M4 core MCU with up to 40 MHz operating frequency, up to 256 kB Flash and 32 kB RAM, integrated 2.4 GHz and Sub-GHz radio with up to 20 dBm TX power, supporting Bluetooth Low Energy and proprietary protocols.
Operating Conditions:
- Supply voltage: 1.85 V to 3.8 V
- Operating temperature: -40 to +125 °C (extended grade)
- Max operating frequency: 40 MHz
Absolute Maximum Ratings:
Key Specs:
- CPU: 32-bit ARM Cortex-M4 with DSP and FPU
- Flash memory: Up to 256 kB
- RAM data memory: Up to 32 kB
- 2.4 GHz TX power: Up to 19.5 dBm
- Sub-GHz TX power: Up to 20 dBm
- 2.4 GHz RX current: 8.7 mA at 1 Mbps, GFSK
- EM2 DeepSleep current: 2.2 μA (4 kB RAM retention, RTCC running from LFRCO)
- 2.4 GHz RX sensitivity: -92.5 dBm at 1 Mbit/s GFSK
- ADC: 12-bit, 1 Msps SAR
Features:
- Integrated PA and balun for 2.4 GHz
- Autonomous Hardware Crypto Accelerator and Random Number Generator
- 12-channel Peripheral Reflex System (PRS)
- Wake on Radio with signal strength detection
- RFSENSE for wideband RF energy detection and wakeup
- Integrated DC-DC converter with up to 200 mA load current
- Wide selection of MCU peripherals including ADC, ACMP, IDAC, Timers, UART/SPI/I2S, LEUART, I2C with SMBus
Applications:
- IoT Sensors and End Devices
- Health and Wellness
- Home and Building Automation
- Accessories
- Human Interface Devices
- Metering
- Commercial and Retail Lighting and Sensing
Package:
- QFN32 (16 GPIO)
- QFN48 (28 or 31 GPIO)
Features
- 32-bit ARM® Cortex®-M4 core with 40 MHz maximum operating frequency
- Up to 256 kB of flash and 32 kB of RAM
- 12-channel Peripheral Reflex System enabling autonomous interaction of MCU peripherals
- Autonomous Hardware Crypto Accelerator and Random Number Generator
- Integrated PA with up to 19 dBm (2.4 GHz) or 20 dBm (Sub-GHz) TX power
- Integrated balun for 2.4 GHz
- Robust peripheral set and up to 31 GPIO
Electrical Characteristics
All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:
- Typical values are based on T AMB =25 °C and V DD = 3.3 V, by production test and/or technology characterization.
- Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output power-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.
- Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature, unless stated otherwise.
Refer to 4.1.2.1 General Operating Conditions for more details about operational supply and temperature limits.
Absolute Maximum Ratings
Stresses above those listed below may cause permanent damage to the device. This is a stress rating only and functional operation of the devices at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.
Table 4.1. Absolute Maximum Ratings
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Storage temperature range | T STG | -50 | - | 150 | °C | |
| Voltage on any supply pin | V DDMAX | -0.3 | - | 3.8 | V | |
| Voltage ramp rate on any supply pin | V DDRAMPMAX | - | - | 1 | V / μs | |
| DC voltage on any GPIO pin | V DIGPIN | 5V tolerant GPIO pins 1 2 3 | -0.3 | - | Min of 5.25 and IOVDD +2 | V |
| DC voltage on any GPIO pin | Standard GPIO pins | -0.3 | - | IOVDD+0.3 | V | |
| Voltage on HFXO pins | V HFXOPIN | -0.3 | - | 1.4 | V | |
| Input RF level on pins 2G4RF_IOP and 2G4RF_ION | P RFMAX2G4 | - | - | 10 | dBm | |
| Voltage differential between RF pins (2G4RF_IOP - 2G4RF_ION) | V MAXDIFF2G4 | -50 | - | 50 | mV | |
| Absolute voltage on RF pins 2G4RF_IOP and 2G4RF_ION | V MAX2G4 | -0.3 | - | 3.3 | V | |
| Absolute voltage on Sub- GHz RF pins | V MAXSUBG | Pins SUBGRF_OP and SUBGRF_ON | -0.3 | - | 3.3 | V |
| Absolute voltage on Sub- GHz RF pins | Pins SUBGRF_IP and SUBGRF_IN, | -0.3 | - | 0.3 | V | |
| Total current into VDD power lines | I VDDMAX | Source | - | - | 200 | mA |
| Total current into VSS ground lines | I VSSMAX | Sink | - | - | 200 | mA |
| Current per I/O pin | I IOMAX | Sink | - | - | 50 | mA |
| Current per I/O pin | Source | - | - | 50 | mA | |
| Current for all I/O pins | I IOALLMAX | Sink | - | - | 200 | mA |
| Current for all I/O pins | Source | - | - | 200 | mA | |
| Junction temperature | T J | -G grade devices | -40 | - | 105 | °C |
| Junction temperature | -I grade devices | -40 | - | 125 | °C |
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|
- When a GPIO pin is routed to the analog module through the APORT, the maximum voltage = IOVDD.
- Valid for IOVDD in valid operating range or when IOVDD is undriven (high-Z). If IOVDD is connected to a low-impedance source below the valid operating range (e.g. IOVDD shorted to VSS), the pin voltage maximum is IOVDD + 0.3 V, to avoid exceeding the maximum IO current specifications.
- To operate above the IOVDD supply rail, over-voltage tolerance must be enabled according to the GPIO_Px_OVTDIS register. Pins with over-voltage tolerance disabled have the same limits as Standard GPIO.
Thermal Information
Table 4.3. Thermal Characteristics
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 2-Layer PCB, Air velocity = 0 m/s | - | 64.5 | - | °C/W |
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 2-Layer PCB, Air velocity = 1 m/s | - | 51.6 | - | °C/W |
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 2-Layer PCB, Air velocity = 2 m/s | - | 47.7 | - | °C/W |
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 4-Layer PCB, Air velocity = 0 m/s | - | 26.2 | - | °C/W |
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 4-Layer PCB, Air velocity = 1 m/s | - | 23.1 | - | °C/W |
| Thermal resistance, QFN48 Package | THETA JA_QFN48 | 4-Layer PCB, Air velocity = 2 m/s | - | 22.1 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 2-Layer PCB, Air velocity = 0 m/s | - | 79 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 2-Layer PCB, Air velocity = 1 m/s | - | 62.2 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 2-Layer PCB, Air velocity = 2 m/s | - | 54.1 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 4-Layer PCB, Air velocity = 0 m/s | - | 32 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 4-Layer PCB, Air velocity = 1 m/s | - | 28.1 | - | °C/W |
| Thermal resistance, QFN32 Package | THETA JA_QFN32 | 4-Layer PCB, Air velocity = 2 m/s | - | 26.9 | - | °C/W |
Package Information
Figure 7.1. QFN48 Package Drawing
Table 7.1. QFN48 Package Dimensions
| Dimension | Min | Typ | Max |
|---|---|---|---|
| A | 0.80 | 0.85 | 0.90 |
| A1 | 0.00 | 0.02 | 0.05 |
| A3 | 0.20 REF | 0.20 REF | 0.20 REF |
| b | 0.18 | 0.25 | 0.30 |
| D | 6.90 | 7.00 | 7.10 |
| E | 6.90 | 7.00 | 7.10 |
| D2 | 4.60 | 4.70 | 4.80 |
| E2 | 4.60 | 4.70 | 4.80 |
| e | 0.50 BSC | 0.50 BSC | 0.50 BSC |
| L | 0.30 | 0.40 | 0.50 |
| K | 0.20 | - | - |
| R | 0.09 | - | 0.14 |
| aaa | 0.15 | 0.15 | 0.15 |
| bbb | 0.10 | 0.10 | 0.10 |
| ccc | 0.10 | 0.10 | 0.10 |
| ddd | 0.05 | 0.05 | 0.05 |
| eee | 0.08 | 0.08 | 0.08 |
| fff | 0.10 | 0.10 | 0.10 |
-
All dimensions shown are in millimeters (mm) unless otherwise noted.
-
Dimensioning and Tolerancing per ANSI Y14.5M-1994.
-
This drawing conforms to the JEDEC Solid State Outline MO-220, Variation VKKD-4.
-
Recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| EFR32BG1P233F256GM48 | Silicon Labs | — |
| EFR32BG1P332F256GM32 | Silicon Labs | — |
| EFR32BG1P332F256GM48 | Silicon Labs | — |
| EFR32BG1P333F256GM48 | Silicon Labs | — |
| EFR32BG1P333F256IM48 | Silicon Labs | — |
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