CC1352P7RGZ

CC1352P7 SimpleLink™ High-Performance Multi-Band Wireless MCU With Integrated Power Amplifier

Manufacturer

Texas Instruments

Overview

Part: CC1352P7 from Texas Instruments

Type: High-Performance Multi-Band Wireless MCU With Integrated Power Amplifier

Key Specs:

  • Processor: 48-MHz Arm Cortex-M4F
  • Flash Memory: 704KB
  • SRAM: 144KB ultra-low leakage
  • Operating Voltage: 1.8-V to 3.8-V
  • Operating Temperature: -40 to +105°C
  • Max Output Power: +20 dBm
  • RX Sensitivity: -121 dBm for 2.5-kbps long-range mode

Features:

  • Dual-band Sub-1 GHz and 2.4 GHz operation
  • Dynamic multiprotocol manager (DMM) driver
  • Programmable radio supporting 2-(G)FSK, 4-(G)FSK, MSK, OOK, Bluetooth 5.2 Low Energy, IEEE 802.15.4 PHY and MAC
  • Over-the-air upgrade (OTA) support
  • Ultra-low power sensor controller with 4KB of SRAM
  • Low power consumption (e.g., 0.8 μA standby mode with RTC, 144KB RAM)
  • Wireless protocol support for Thread, Zigbee, Matter, Bluetooth 5.2 Low Energy, Wi-SUN, mioty, Amazon Sidewalk, Wireless M-Bus, SimpleLink TI 15.4-stack, 6LoWPAN
  • High performance radio with output power up to +20 dBm
  • MCU peripherals including 12-bit ADC, 8-bit DAC, timers, UART, SSI, I2C, I2S, RTC
  • Security enablers: AES 128/256-bit, ECC, RSA, SHA2 accelerators, True random number generator (TRNG)
  • On-chip buck DC/DC converter

Applications:

  • Grid infrastructure (Smart Meters, Grid communications, EV charging, Alternative energy)
  • Building automation (Building security systems, HVAC systems, Fire safety)
  • Retail Automation (Electronic shelf labels, Portable POS terminal)
  • Personal Electronics (RF remote controls, Smart Speakers, Smart Displays, Set-top box, Gaming, Electronic and robotic toys, Wearables, Smart trackers, Smart clothing, Smartwatch)
  • Wireless Modules (Bluetooth Low Energy, Thread, Zigbee, Matter, Wi-SUN, Amazon Sidewalk, mioty, multiprotocol)

Package:

  • 7-mm × 7-mm RGZ VQFN48 (26 GPIOs)

Applications

Electrical Characteristics

Measurements CBSed to PG2.1:

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Offset errorV_REF = V_DDS = 3.8 V±0.40LSB⁽¹⁾
V_REF = V_DDS = 3.0 V±0.50
V_REF = V_DDS = 1.8 V±0.75
V_REF = DCOUPL, pre-charge ON±1.55
V_REF = DCOUPL, pre-charge OFF±1.30
V_REF = ADCREF±1.10
Max code output voltage variationV_REF = V_DDS = 3.8 V±1.00LSB⁽¹⁾
V_REF = V_DDS = 3.0 V±1.00
V_REF = V_DDS = 1.8 V±1.00
V_REF = DCOUPL, pre-charge ON±3.45
V_REF = DCOUPL, pre-charge OFF±2.10
V_REF = ADCREF±1.90
Output voltage range
Load = Low Power Clocked
Comparator
V_REF = V_DDS = 3.8 V, code 10.03V
V_REF = V_DDS = 3.8 V, code 2553.61
V_REF = V_DDS = 3.0 V, code 10.02
V_REF = V_DDS = 3.0 V, code 2552.85
V_REF = V_DDS = 1.8 V, code 10.02
V_REF = V_DDS = 1.8 V, code 2551.71
V_REF = DCOUPL, pre-charge OFF, code 10.02
V_REF = DCOUPL, pre-charge OFF, code 2551.20
V_REF = DCOUPL, pre-charge ON, code 11.27
V_REF = DCOUPL, pre-charge ON, code 2552.46
V_REF = ADCREF, code 10.02
V_REF = ADCREF, code 2551.42

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)

MINMAXUNIT
VDDS(3)Supply voltage-0.34.1V
Voltage on any digital pin(4)-0.3VDDS + 0.3, max 4.1V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X48M_N and X48M_P-0.3VDDR + 0.3, max 2.25V
VinVoltage on ADC inputVoltage scaling enabled-0.3VDDSV
Voltage scaling disabled, internal reference-0.31.49V
Voltage scaling disabled, VDDS as reference-0.3VDDS / 2.9V
Input level, Sub-1 GHz RF pins (RF_P_SUB_1GHZ and RF_N_SUB_1GHZ)10dBm
Input level, 2.4 GHz RF pins (RF_P_2_4GHZ and RF_N_2_4GHZ)5dBm
TstgStorage temperature-40150°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to ground, unless otherwise noted.

(3) VDDS_DCDC, VDDS2 and VDDS3 must be at the same potential as VDDS.

(4) Including analog capable DIOs.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MINMAXUNIT
Operating ambient temperature(1) (3)–40105°C
Operating junction temperature(1) (3)–40115°C
Operating supply voltage (VDDS)1.83.8V
Operating supply voltage (VDDS), boost modeVDDR = 1.95 V
+14 dBm RF output sub-1 GHz power amplifier
2.13.8V
Rising supply voltage slew rate0100mV/μs
Falling supply voltage slew rate(2)020mV/μs

(1) Operation at or near maximum operating temperature for extended durations will result in a reduction in lifetime.

(2) For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-μF VDDS input capacitor must be used to ensure compliance with this slew rate.

(3) For thermal resistance characteristics refer to Section 7.8.

Thermal Information

THERMAL METRIC(1)DescriptionRGZ (VQFN) 48 PINSUNIT
RθJAJunction-to-ambient thermal resistance23.7°C/W(2)
RθJC(top)Junction-to-case (top) thermal resistance13.0°C/W(2)
RθJBJunction-to-board thermal resistance7.7°C/W(2)
ψJTJunction-to-top characterization parameter0.1°C/W(2)
ψJBJunction-to-board characterization parameter7.6°C/W(2)
RθJC(bot)Junction-to-case (bottom) thermal resistance1.9°C/W(2)

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) °C/W = degrees Celsius per watt.

Related Variants

The following components are covered by the same datasheet.

Part NumberManufacturerPackage
CC1352P7Texas Instruments
CC1352P7-1Texas Instruments
CC1352P7-4Texas Instruments
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