BSC027N10NS5

Part: BSC027N10NS5 (Manufacturer not specified)

Type: N-channel Power MOSFET

Key Specs:

• Drain-source voltage (VDS): 100 V
• Max drain-source on-state resistance (RDS(on),max): 2.7 mΩ
• Continuous drain current (ID): 100 A
• Operating and storage temperature (Tj, Tstg): -55 to 175 °C
• Output charge (Qoss): 114 nC
• Gate charge total (Qg): 89 nC

Features:

• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• 175°C rated
• Qualified for industrial applications according to JEDEC47/20/22

Applications:

• High-performance SMPS
• Synchronous rectification

Package:

• TSON-8-3: Max Height 1.10 mm, Length 4.90-5.10 mm, Width 5.90-6.10 mm

• •-Optimizedforhighperformance-SMPS,e.g.sync.rec.
• •-100%avalanchetested
• •-Superiorthermalresistance
• •-N-channel
• •-Pb-freeleadplating;-RoHScompliant
• •-Halogen-freeaccordingto-IEC61249-2-21
• •-175°Crated

Product-Validation:

Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22

Table-1-----Key-Performance-Parameters

Parameter	Value	Unit
VDS	100	V
RDS(on),max	2.7	mΩ
ID	100	A
Qoss	114	nC
QG(0V..10V)	89	nC

Type / Ordering Code	Package	Marking	Related Links
BSC027N10NS5	TSON-8-3	027N10N	-

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Continuous drain current	I_D	-	-	100	A	V_GS=10 V, T_C=25 °C
Continuous drain current	I_D	-	-	100	A	V_GS=10 V, T_C=100 °C
Continuous drain current	I_D	-	-	23	A	V_GS=10 V, T_A=25 °C, R_thJA =50K/W^1)
Pulsed drain current^2)	I_D,pulse	-	-	400	A	T_C=25 °C
Avalanche energy, single pulse^3)	E_AS	-	-	641	mJ	I_D=50 A, R_GS=25 Ω
Gate source voltage	V_GS	-20	-	20	V	-
Power dissipation	P_tot	-	-	214	W	T_C=25 °C
Power dissipation	P_tot	-	-	3.0	W	T_A=25 °C, R_thJA=50 K/W^2)
Operating and storage temperature	T_j, T_stg	-55	-	175	°C	IEC climatic category; DIN IEC 68-1: 55/175/56

1-----Maximumratings

at-TA=25-°C,unlessotherwisespecified

Table-2-----Maximumratings

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Thermal resistance, junction - case, bottom	RthJC	-	0.4	0.7	K/W	-
Thermal resistance, junction - case, top	RthJC	-	-	20	K/W	-
Device on PCB, 6 cm² cooling area¹⁾	RthJA	-	-	50	K/W	-

2-----Thermalcharacteristics

at-Tj=25-°C,unlessotherwisespecified

Table-3-----Thermalcharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Drain-source breakdown voltage	V(BR)DSS	100	-	-	V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	2.2	3.0	3.8	V	VDS=VGS, ID=146 μA
Zero gate voltage drain current	IDSS	-	0.1	5	μA	VDS=100 V, VGS=0 V, TJ=25 °C
Zero gate voltage drain current	IDSS	-	10	100	μA	VDS=100 V, VGS=0 V, TJ=125 °C
Gate-source leakage current	IGSS	-	10	100	nA	VGS=20 V, VDS=0 V
Drain-source on-state resistance	RDS(on)	-	2.1	2.7	mΩ	VGS=10 V, ID=50 A
Drain-source on-state resistance	RDS(on)	-	2.6	3.4	mΩ	VGS=6 V, ID=25 A
Gate resistance1)	RG	-	1.7	2.5	Ω	-
Transconductance	gfs	75	150	-	S

1. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

2. See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information

3-----Electricalcharacteristics

at-Tj=25-°C,unlessotherwisespecified

Table-4-----Staticcharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Input capacitance¹)	Ciss	-	6300	8200	pF	VGS=0 V, VDS=50 V, f=1 MHz
Output capacitance¹)	Coss	-	970	1300	pF	VGS=0 V, VDS=50 V, f=1 MHz
Reverse transfer capacitance¹)	Crss	-	43	75	pF	VGS=0 V, VDS=50 V, f=1 MHz
Turn-on delay time	td(on)	-	13	-	ns	VDD=50 V, VGS=10 V, ID=50 A, RG,ext=3 Ω
Rise time	tr	-	14	-	ns	VDD=50 V, VGS=10 V, ID=50 A, RG,ext=3 Ω
Turn-off delay time	td(off)	-	41	-	ns	VDD=50 V, VGS=10 V, ID=50 A, RG,ext=3 Ω
Fall time	tf	-	18	-	ns	VDD=50 V, VGS=10 V, ID=50 A, RG,ext=3 Ω

Table-5-----Dynamiccharacteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Gate to source charge	Qgs	-	28	-	nC	VDD=50 V, ID=50 A, VGS=0 to 10 V
Gate charge at threshold	Qg(th)	-	19	-	nC	VDD=50 V, ID=50 A, VGS=0 to 10 V
Gate to drain charge¹)	Qgd	-	18	27	nC	VDD=50 V, ID=50 A, VGS=0 to 10 V
Switching charge	Qsw	-	27	-	nC	VDD=50 V, ID=50 A, VGS=0 to 10 V
Gate charge total¹)	Qg	-	89	111	nC	VDD=50 V, ID=50 A, VGS=0 to 10 V
Gate plateau voltage	Vplateau	-	4.4	-	V	VDD=50 V, ID=50 A, VGS=0 to 10 V
Gate charge total, sync. FET	Qg(sync)	-	77	-	nC	VDS=0.1 V, VGS=0 to 10 V
Output charge¹)	Qoss	-	114	152	nC	VDD=50 V, VGS=0 V

Table-6-----Gatechargecharacteristics2)

Parameter	Symbol	Values			Unit	Note / Test Condition
		Min.	Typ.	Max.
Diode continuous forward current	I_S	-	-	100	A	T_C=25 °C
Diode pulse current	I_S,pulse	-	-	400	A	T_C=25 °C
Diode forward voltage	V_SD	-	0.83	1.1	V	V_GS=0 V, I_F=50 A, T_j=25 °C
Reverse recovery time^1)	t_rr	-	56	112	ns	V_R=50 V, I_F=50 A, di_F/dt=100 A/μs
Reverse recovery charge^1)	Q_rr	-	89	178	nC	V_R=50 V, I_F=50 A, di_F/dt=100 A/μs

¹⁾ Defined by design. Not subject to production test

²⁾ See ″Gate charge waveforms″ for parameter definition

Table-7-----Reversediode

DIMENSION	MIN.	MAX.
A	-	1.10
b	0.34	0.54
b1	-	0.05
c	0.20
D	4.90	5.10
D1	4.25	4.45
E	5.90	6.10
E1	4.00	4.20
E2	3.14	3.34
E3	0.20	0.40
e	1.27
K2	(0.37)
L	0.60	0.80
L1	0.43	0.63
L2	(0.25)

¹⁾ Defined by design. Not subject to production test

4-----Electricalcharacteristicsdiagrams

5-----Package-Outlines

DIMENSION	MILLIMETERS
	MIN.
A	-
b	0.34
b1	-
c	0.20
D	4.90
D1	4.25
E	5.90
E1	4.00
E2	3.14
E3	0.20 0.40
e	1.27
K2	(0.37)
L	0.60
L1	0.43 0.63
L2	(0.25)

Figure-1-----Outline-TSON-8-3,dimensionsinmm/inches

Parameter	Symbol	Min.	Typ.	Max.	Unit	Note / Test Condition
Drain-source breakdown voltage	V(BR)DSS	100	-	-	V	VGS=0 V, ID=1 mA
Gate threshold voltage	VGS(th)	2.2	3.0	3.8	V	VDS=VGS, ID=146 μA
Zero gate voltage drain current	IDSS	-	0.1	5	μA	VDS=100 V, VGS=0 V, TJ=25 °C
Zero gate voltage drain current	IDSS	-	10	100	μA	VDS=100 V, VGS=0 V, TJ=125 °C
Gate-source leakage current	IGSS	-	10	100	nA	VGS=20 V, VDS=0 V
Drain-source on-state resistance	RDS(on)	-	2.1	2.7	mΩ	VGS=10 V, ID=50 A
Drain-source on-state resistance	RDS(on)	-	2.6	3.4	mΩ	VGS=6 V, ID=25 A
Gate resistance1)	RG	-	1.7	2.5	Ω	-
Transconductance	gfs	75	150	-	S

1. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.

2. See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information