BSC027N10NS5
N-channel Power MOSFETThe BSC027N10NS5 is a n-channel power mosfet from Infineon Technologies. View the full BSC027N10NS5 datasheet below including key specifications.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 23A (Ta), 100A (Tc) |
| Drain-Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) | 111 nC @ 10 V |
| Input Capacitance (Ciss) | 8200 pF @ 50 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Rds(on) | 2.7mOhm @ 50A, 10V Ω |
| Supplier Device Package | PG-TSON-8-3 |
| Supplier Device Package | PG-TSON-8-3 |
| Supplier Device Package | PG-TSON-8-3 |
| Supplier Device Package | PG-TSON-8-3 |
| Diode Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Gate Threshold Voltage | 3.8V @ 146µA |
Overview
Part: BSC027N10NS5 — Infineon Technologies AG
Type: N-channel Power MOSFET
Description: 100 V, 2.7 mΩ N-channel power MOSFET with 100 A continuous drain current, optimized for high-performance SMPS.
Operating Conditions:
- Drain-source voltage: up to 100 V
- Gate-source voltage: -20 to 20 V
- Operating temperature: -55 to 175 °C
Absolute Maximum Ratings:
- Max drain-source voltage: 100 V
- Max continuous drain current: 100 A (VGS=10 V, TC=25 °C)
- Max junction/storage temperature: 175 °C
Key Specs:
- Drain-source breakdown voltage (V(BR)DSS): 100 V (VGS=0 V, ID=1 mA)
- Drain-source on-state resistance (RDS(on)): 2.7 mΩ (max, VGS=10 V, ID=50 A)
- Gate threshold voltage (VGS(th)): 2.2 V (min) to 3.8 V (max) (VDS=VGS, ID=146 μA)
- Zero gate voltage drain current (IDSS): 5 μA (max, VDS=100 V, VGS=0 V, Tj=25 °C)
- Total gate charge (Qg): 89 nC (typ, VDD=50 V, ID=50 A, VGS=0 to 10 V)
- Input capacitance (Ciss): 6300 pF (typ, VGS=0 V, VDS=50 V, f=1 MHz)
- Reverse diode forward voltage (VSD): 0.83 V (typ)
- Thermal resistance, junction - case, bottom (RthJC): 0.7 K/W (max)
Features:
- Optimized for high-performance SMPS, e.g. sync. rec.
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Pb-free lead-plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- 175°C rated
Applications:
- High-performance SMPS (Synchronous Rectification)
- Industrial applications
Package:
- TSON-8-3
Features
- ·-Optimized-for-high-performance-SMPS,-e.g.-sync.-rec.
- ·-100%-avalanche-tested
- ·-Superior-thermal-resistance
- ·-N-channel
- ·-Pb-free-lead-plating;-RoHS-compliant
- ·-Halogen-free-according-to-IEC61249-2-21
- ·-175°C-rated
Thermal Information
| Values | Values | Values | Unit | ||
|---|---|---|---|---|---|
| Parameter | Symbol | Min. | Typ. | Max. | |
| Thermal resistance, junction - case, bottom | R thJC | - | 0.4 | 0.7 | K/W |
| Thermal resistance, junction - case, top | R thJC | - | - | 20 | K/W |
| Device on PCB, 6 cm 2 cooling area 1) | R thJA | - | - | 50 | K/W |
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BSC027N10NS5ATMA1 | Infineon Technologies | 8-PowerTDFN |
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