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BSC027N10NS5

N-channel Power MOSFET

The BSC027N10NS5 is a n-channel power mosfet from Infineon Technologies. View the full BSC027N10NS5 datasheet below including key specifications.

BSC027N10NS5 shares its datasheet with BSC027N10NS5ATMA1, whose page lists every part number it covers.

Official BSC027N10NS5 datasheet (PDF) — the source this page was extracted from.

Manufacturer

Infineon Technologies

Category

Discrete Semiconductors

Package

TSON-8-3

BSC027N10NS5 Key Specifications

ParameterValue
Continuous Drain Current23A (Ta), 100A (Tc)
Drain-Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
FET TypeN-Channel
Gate Charge (Qg)111 nC @ 10 V
Input Capacitance (Ciss)8200 pF @ 50 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Package / Case8-PowerTDFN
Power Dissipation (Max)3W (Ta), 214W (Tc)
Rds(on)2.7mOhm @ 50A, 10V Ω
Supplier Device PackagePG-TSON-8-3
Diode TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Gate Threshold Voltage3.8V @ 146µA

BSC027N10NS5 Overview

Part: BSC027N10NS5 (BSC027N10NS5ATMA1) — Infineon Technologies

Type: N-Channel Power MOSFET (OptiMOS)

Description: 100 V N-channel OptiMOS power MOSFET with 2.7 mΩ max RDS(on) at VGS = 10 V, 194 A continuous drain current, in a PG-TSON-8-3 package and rated to 175 °C.

Operating Conditions:

  • Supply voltage: not applicable
  • Operating temperature: -55 to 175 °C (Tj, Tstg)
  • Drain-source voltage: 100 V
  • Gate-source voltage: ±20 V

Absolute Maximum Ratings:

  • Continuous drain current: 194 A (VGS = 10 V, TC = 25 °C); 137 A (TC = 100 °C); 23 A (TA = 25 °C, RthJA = 50 K/W)
  • Pulsed drain current: 776 A (TC = 25 °C)
  • Gate-source voltage: -20 to 20 V
  • Single-pulse avalanche energy: 641 mJ (ID = 50 A, RGS = 25 Ω)
  • Power dissipation: 214 W (TC = 25 °C); 3.0 W (TA = 25 °C, RthJA = 50 K/W)
  • Operating and storage temperature: -55 to 175 °C

Key Specs:

  • V(BR)DSS: 100 V min (VGS = 0 V, ID = 1 mA)
  • RDS(on): 2.1 mΩ typ, 2.7 mΩ max (VGS = 10 V, ID = 50 A); 2.6 mΩ typ, 3.4 mΩ max (VGS = 6 V, ID = 25 A)
  • VGS(th): 2.2 to 3.8 V, 3.0 V typ (ID = 146 μA)
  • IDSS: 0.1 μA typ, 5 μA max (VDS = 100 V, Tj = 25 °C); 10 μA typ, 100 μA max (Tj = 125 °C)
  • Total gate charge Qg: 89 nC typ, 111 nC max (VDD = 50 V, ID = 50 A, VGS = 0 to 10 V)
  • Qgd: 18 nC typ, 27 nC max
  • Qoss: 114 nC typ, 152 nC max (VDD = 50 V)
  • Ciss / Coss / Crss: 6300 / 970 / 43 pF typ (VDS = 50 V, f = 1 MHz)
  • Switching times (VDD = 50 V, ID = 50 A, RG,ext = 3 Ω): td(on) 13 ns, tr 14 ns, td(off) 41 ns, tf 18 ns
  • Body diode: VSD 0.83 V typ, 1.1 V max (IF = 50 A); trr 56 ns typ; Qrr 89 nC typ
  • Thermal resistance: RthJC bottom 0.4 K/W typ, 0.7 K/W max; RthJA 50 K/W max (6 cm² cooling area)

Features:

  • Optimized for high-performance SMPS, e.g. synchronous rectification
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC 61249-2-21
  • 175 °C rated
  • Qualified according to JEDEC for industrial applications

Applications:

  • Switched-mode power supplies (SMPS)
  • Synchronous rectification

Package:

  • PG-TSON-8-3 (marking 027N10N)

BSC027N10NS5 Features

  • ·-Optimized-for-high-performance-SMPS,-e.g.-sync.-rec.
  • ·-100%-avalanche-tested
  • ·-Superior-thermal-resistance
  • ·-N-channel
  • ·-Pb-free-lead-plating;-RoHS-compliant
  • ·-Halogen-free-according-to-IEC61249-2-21
  • ·-175°C-rated

BSC027N10NS5 Thermal Information

ParameterSymbolValues - Min.Values - Typ.Values - Max.UnitNote/TestCondition
Thermal resistance, junction - case, bottomR thJC-0.40.7K/W-
Thermal resistance, junction - case, topR thJC--20K/W-
Device on PCB, 6 cm 2 cooling area 2)R thJA--50K/W-

Variants on the same datasheet

These parts have exact links to the same datasheet. They are candidates to compare, not verified drop-in replacements; check package, pinout and electrical limits.

Part NumberManufacturerPackage
BSC027N10NS5ATMA1Infineon Technologies8-PowerTDFN

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  • 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-7-F – Diodes Incorporated, Fast Switching Diode

All Discrete Semiconductors datasheetsAll Infineon Technologies datasheets (140)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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