BQ25892RTWR
Synchronous Buck ChargerThe BQ25892RTWR is a synchronous buck charger from Texas Instruments. View the full BQ25892RTWR datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Manufacturer
Texas Instruments
Category
Synchronous Buck Charger
Package
24-WFQFN Exposed Pad
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Battery Chemistry | Lithium Ion/Polymer |
| Charge Current (Max) | 5A |
| Fault Protection | Over Current, Over Temperature |
| Fault Protection | Over Current, Over Temperature |
| Interface | I2C, USB |
| Mounting Type | Surface Mount |
| Number of Cells | 1 |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Package / Case | 24-WFQFN Exposed Pad |
| Packaging | MouseReel |
| Packaging | MouseReel |
| Standard Pack Qty | 3000 |
| Standard Pack Qty | 3000 |
| Supplier Device Package | 24-WQFN (4x4) |
| Supplier Device Package | 24-WQFN (4x4) |
| Input Voltage (Max) | 14V |
Overview
Part: BQ25890, BQ25892 — Texas Instruments
Type: I2C Controlled Single Cell 5-A Fast Charger with MaxCharge™ Technology
Description: Highly-integrated 5-A switch-mode battery charge management and system power path management device for single cell Li-Ion and Li-polymer batteries, supporting 3.9-V to 14-V input voltage range and USB On-the-Go boost mode.
Operating Conditions:
- Supply voltage: 3.9–14 V
- Operating temperature: -40 to +85 °C (ambient)
- Junction temperature: -40 to +125 °C
Absolute Maximum Ratings:
- Max supply voltage (VBUS, VCC): 16 V
- Max SW (peak for 10 ns duration): 20 V
- Max continuous current (BATFET): 9 A
- Max junction temperature: 150 °C
Key Specs:
- Charge current: 5 A (max)
- Charge efficiency: 93% at 2 A, 91% at 3 A
- Boost efficiency: 93% at 5 V, 1 A output
- Charge voltage regulation accuracy: ±0.5%
- Charge current regulation accuracy: ±5%
- Input current regulation accuracy: ±7.5%
- Battery discharge MOSFET resistance: 11 mΩ
- Battery leakage current (Ship Mode): 12 μA
Features:
- High efficiency 5-A, 1.5-MHz Switch Mode buck charge
- USB On-the-Go (OTG) with adjustable output from 4.5 V to 5.5 V
- Single input to support USB input and adjustable high voltage adapters
- Input Current Optimizer (ICO) to maximize input power
- Resistance Compensation (IRCOMP)
- Integrated ADC for system monitor
- Narrow VDC (NVDC) power path management
- BATFET Control to support Ship Mode, wake up, and full system reset
- Flexible autonomous and I2C Mode
- High integration includes all MOSFETs, current sensing and loop compensation
- Battery temperature sensing for charge and Boost Mode
- Thermal regulation and thermal shutdown
Applications:
- Smartphone
- Tablet PC
- Portable Internet Devices
Package:
- WQFN (24) - 4.00mm x 4.00mm
Features
- High efficiency 5-A, 1.5-MHz Switch Mode buck charge
- -93% Charge efficiency at 2 A and 91% charge efficiency at 3-A charge current
- -Optimize for high voltage input (9 V to 12 V)
- -Low power PFM Mode for light-load operations
- USB On-the-Go (OTG) with adjustable output from 4.5 V to 5.5 V
- -Selectable 500-kHz and 1.5-MHz Boost Converter with up-to 2.4-A output
- -93% Boost efficiency at 5 V at 1-A output
- -Accurate Hiccup Mode overcurent protection
- Single input to support USB input and adjustable high voltage adapters
- -Support 3.9-V to 14-V input voltage range
- -Input current limit (100 mA to 3.25 A with 50-mA resolution) to support USB2.0, USB3.0 standard and high voltage adapters
- -Maximum power tracking by input voltage limit up-to 14 V for wide range of adapters
- -Auto detect USB SDP, CDP, DCP, and nonstandard adapters (BQ25890)
- Input Current Optimizer (ICO) to maximize input power without overloading adapters
- Resistance Compensation (IRCOMP) from charger output to cell terminal
- Highest battery discharge efficiency with 11-mΩ battery discharge MOSFET up to 9 A
- Integrated ADC for system monitor (voltage, temperature, charge current)
- Narrow VDC (NVDC) power path management
- -Instant-on works with no battery or deeply discharged battery
- -Ideal diode operation in Battery Supplement Mode
- BATFET Control to support Ship Mode, wake up, and full system reset
- Flexible autonomous and I 2 C Mode for optimal system performance
- High integration includes all MOSFETs, current sensing and loop compensation
- 12-μA Low battery leakage current to support Ship Mode
- High Accuracy
- -±0.5% Charge voltage regulation
- -±5% Charge current regulation
- -±7.5% Input current regulation
- Safety
- -Battery temperature sensing for charge and Boost Mode
- -Thermal regulation and thermal shutdown
Applications
- Smartphone
- Tablet PC
- Portable Internet Devices
Pin Configuration
Figure 7-1. RTW Package 24-Pin WQFN Top View
Figure 7-1. RTW Package 24-Pin WQFN Top View
Figure 7-2. RTW Package 24-Pin WQFN Top View
| PIN | PIN | PIN | TYPE (1) |
|---|---|---|---|
| NAME | BQ25890 | BQ25892 | TYPE (1) |
| VBUS | 1 | 1 | P |
| D+ | 2 | - | AIO |
| PSEL | - | 2 | DI |
Figure 7-2. RTW Package 24-Pin WQFN Top View
Electrical Characteristics
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS V BAT = 4.2 V, V (VBUS) < V (UVLO) , leakage between BAT and VBUS | QUIESCENT CURRENTS | QUIESCENT CURRENTS | QUIESCENT CURRENTS 5 | QUIESCENT CURRENTS μA |
| I BAT | Battery discharge current (BAT, SW, SYS) in buck mode | High-Z mode, no VBUS, BATFET disabled (REG09[5]=1), battery monitor disabled, T J < 85°C | 12 | 23 | μA | |
| High-Z mode, no VBUS, BATFET enabled (REG09[5]=0), battery monitor disabled, T J < 85°C | 32 | 60 | μA | |||
| I (VBUS_HIZ) | Input supply current (VBUS) in buck mode when High-Z mode | V (VBUS) = 5 V, High-Z mode, no battery, battery monitor disabled | 15 | 35 | μA | |
| is enabled | V (VBUS) = 12 V, High-Z mode, no battery, battery monitor disabled | 25 | 50 | μA | ||
| I (VBUS) | Input supply current (V BUS ) in buck mode | V BUS > V (UVLO) , V BUS > V BAT , converter not switching V BUS > V (UVLO) , V BUS > V BAT , converter switching, V BAT = 3.2 V, I SYS = 0A V BUS > V (UVLO) , V BUS > V BAT , converter switching, V BAT = 3.8 V, I SYS = 0 A | 1.5 3 3 | 3 | mA mA mA | |
| I (BOOST) | Battery discharge current in boost mode | V BAT = 4.2 V, boost mode, I (VBUS) = 0 A, converter switching | 5 | mA | ||
| VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP | VBUS/BAT POWER UP |
| V (VBUS_OP) | VBUS operating range | 3.9 | 14 | V | ||
| V (VBUS_UVLOZ) | VBUS for active I 2 C, no battery | 3.6 | V | |||
| V (SLEEP) | Sleep mode falling threshold | 25 | 65 | 120 | mV | |
| V (SLEEPZ) | Sleep mode rising threshold | 130 | 250 | 370 | mV | |
| VBUS over-voltage rising threshold | 14 | 14.6 | V | |||
| V (ACOV) | VBUS over-voltage falling threshold | 13.5 | 14 | V | ||
| V BAT(UVLOZ) | Battery for active I2C, no VBUS | 2.3 | V | |||
| V BAT(DPL) | Battery depletion falling threshold | 2.15 | 2.5 | V | ||
| V BAT(DPLZ) | Battery depletion rising threshold | 2.35 | 2.7 | V | ||
| V (VBUSMIN) | Bad adapter detection threshold | 3.8 | V |
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| I (BADSRC) | Bad adapter detection current source | 30 | mA | |||
| POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT | POWER-PATH MANAGEMENT |
| V | Typical system regulation voltage | I (SYS) = 0 A, V BAT > V SYS(MIN) , BATFET Disabled (REG09[5]=1) | V BAT + 50 mV | V | ||
| SYS | I (SYS) = 0 A, V BAT < V SYS(MIN) , BATFET Disabled (REG09[5]=1) | V | SYS(MIN) + 150 mV | V | ||
| V SYS(MIN) | Minimum DC system voltage output | V BAT < V SYS(MIN) , SYS_MIN = 3.5 V (REG03[3:1]=101), I SYS = 0 A | 3.50 | 3.65 | V | |
| V SYS(MAX) | Maximum DC system voltage output | V BAT = 4.35 V, SYS_MIN = 3.5V (REG03[3:1]=101), I SYS = 0 A | 4.40 | 4.42 | V | |
| R | Top reverse blocking MOSFET(RBFET) on-resistance between | T J = -40°C to +85°C | 27 | 38 | mΩ | |
| ON(RBFET) | VBUS and PMID | T J = -40°C to +125°C | 27 | 44 | mΩ | |
| R | Top switching MOSFET (HSFET) on-resistance between PMID | T J = -40°C to +85°C | 27 | 39 | mΩ | |
| ON(HSFET) | and SW | T J = -40°C to +125°C | 27 | 47 | mΩ | |
| R ON(LSFET) | Bottom switching MOSFET (LSFET) on-resistance between | T J = -40°C to +85°C | 16 | 24 | mΩ | |
| SW and GND | T J = -40°C to +125°C | 16 | 28 | mΩ | ||
| V (FWD) | BATFET forward voltage in supplement mode | BAT discharge current 10 mA | 30 | mV | ||
| V BAT(GD) | Battery good comparator rising threshold | V BAT rising | 3.4 | 3.55 | 3.7 | V |
| V BAT(GD_HYST) | Battery good comparator falling threshold | V BAT falling | 100 | mV | ||
| BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER | BATTERY CHARGER |
| V BAT(REG_RANGE) | Typical charge voltage range | 3.840 | 4.608 | V | ||
| V BAT(REG_STEP) | Typical charge voltage step | 16 | mV | |||
| V BAT(REG) | Charge voltage resolution accuracy | V BAT = 4.208 V (REG06[7:2]=010111) or V BAT = 4.352 V (REG06[7:2]=100000) T J = -40°C to +85°C | -0.5% | 0.5% | ||
| I (CHG_REG_RANGE) | Typical fast charge current regulation range | 0 | 5056 | mA | ||
| I (CHG_REG_STEP) | Typical fast charge current regulation step | 64 | mA | |||
| Fast charge current regulation accuracy | V BAT = 3.1 V or 3.8 V, I CHG = 128 mA T J = -40°C to +85°C | -20% | 20% | |||
| I (CHG_REG_ACC) | V BAT = 3.1 V or 3.8 V, I CHG = 256 mA T J = -40°C to +85°C | -10% | 10% | |||
| Battery LOWV falling threshold | T J = -40°C to +85°C Fast charge to precharge, BATLOWV | -5% 2.6 | 2.8 | 5% 2.9 | V | |
| V BAT(LOWV) | Battery LOWV rising threshold | (REG06[1]) = 1 Precharge to fast charge, BATLOWV (REG06[1])=1 (Typical 200-mV hysteresis) | 2.8 | 3 | 3.1 | V |
| I (PRECHG_RANGE) | Precharge current range | 64 | 1024 | mA | ||
| I (PRECHG_STEP) | Typical precharge current step | 64 | mA | |||
| I (PRECHG_ACC) | Precharge current accuracy | V BAT =2.6 V, I PRECHG = 256 mA | -10% | +10% | ||
| I (TERM_RANGE) | Termination current range | 64 | 1024 | mA | ||
| I (TERM_STEP) | Typical termination current step | 64 | mA | |||
| I | Termination current accuracy | I TERM = 256 mA, I CHG <= 1344 mA T J = -20°C to +85°C | -12% | 12% | ||
| (TERM_ACC) | I TERM = 256 mA, I CHG > 1344 mA T J = -20°C to +85°C | -20% | 20% | |||
| V (SHORT) | Battery short voltage | VBAT falling | 2 | V | ||
| V (SHORT_HYST) | Battery short voltage hysteresis | VBAT rising | 200 | mV | ||
| I (SHORT) | Battery short current | VBAT < 2.2 V | 100 | mA | ||
| V (RECHG) | Recharge threshold below V BATREG | V BAT falling, VRECHG (REG06[0]=0) = 0 V BAT falling, VRECHG (REG06[0]=0) = 1 | 100 200 | mV mV | ||
| I BAT(LOAD) | Battery discharge load current | V BAT = 4.2 V | 15 | mA | ||
| I SYS(LOAD) | System discharge load current | V SYS = 4.2 V | 30 | mA | ||
| R ON(BATFET) | SYS-BAT MOSFET (BATFET) on-resistance | T J = 25°C T J = -40°C to +125°C | 11 11 | 13 19 | mΩ mΩ | |
| INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION | INPUT VOLTAGE / CURRENT REGULATION |
| V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V | V IN(DPM_RANGE) Typical Input voltage regulation range 3.9 15.3 V |
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV | V IN(DPM_STEP) Typical Input voltage regulation step 100 mV |
| V IN(DPM_ACC) | Input voltage regulation accuracy | VINDPM = 4.4 V, 9 V | 3% | 3% | ||
| I IN(DPM_RANGE) | Typical Input current regulation range | 100 | 3250 | mA | ||
| I IN(DPM_STEP) | Typical Input current regulation step | 50 | mA | |||
| I IN(DPM100_ACC) | Input current 100-mA regulation accuracy V BAT = 5 V, current pulled from SW | IINLIM (REG00[5:0]) =100 mA | 85 | 90 | 100 | mA |
| USB150, IINLIM (REG00[5:0]) = 150 mA | 125 | 135 | 150 | mA | ||
| I IN(DPM_ACC) | Input current regulation accuracy | USB500, IINLIM (REG00[5:0]) = 500 mA | 440 | 470 | 500 | mA |
| V BAT = 5 V, current pulled from SW | USB900, IINLIM (REG00[5:0]) = 900 mA | 750 | 825 | 900 | mA | |
| Adapter 1.5 A, IINLIM (REG00[5:0]) = 1500 mA | 1300 | 1400 | 1500 | mA | ||
| I IN(START) | Input current regulation during system start up | V SYS = 2.2 V, IINLIM (REG00[5:0])> = 200 mA | 200 | mA | ||
| K ILIM | I INMAX = K ILIM /R ILIM | Input current regulation by ILIM pin = 1.5 A | 320 | 355 | 390 | A x Ω |
| D+/D- DETECTION (BQ25890) | D+/D- DETECTION (BQ25890) | |||||
| V (0P6_VSRC) | D+/D- voltage source (0.6 V) | 0.5 | 0.6 | 0.7 | V | |
| V (3P3_VSRC) | D+ voltage source (3.3V) | For HVDCP detection | 3.2 | 3.3 | 3.4 | V |
| V (3p45_VSRC) | D+/D- voltage source (3.45 V) | 3.3 | 3.45 | 3.6 | V | |
| I (10UA_ISRC) | D+ connection check current source | 7 | 10 | 14 | μA | |
| I (100UA_ISINK) | D+/D- current sink (100 μA) | 50 | 100 | 150 | μA | |
| I (DPDM_LKG) | D+/D- leakage current | D-, switch open | -1 | 1 | μA | |
| D+, switch open | -1 | 1 | μA | |||
| I (1P6MA_ISINK) | D+/D- current sink (1.6 mA) | 1.45 | 1.60 | 1.75 | μA | |
| V (0P4_VTH) | D+/D- low comparator threshold | 250 | 400 | mV | ||
| V (0P8_VTH) | D+ low comparator threshold | 0.8 | V | |||
| V (2P7HI_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3, or 4) | Internal only | 2.85 | 3.1 | V | |
| V (2P7LO_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3, or 4) | Internal only | 2.35 | 2.55 | V | |
| V (2P7_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3, or 4) | 2.55 | 2.85 | V | ||
| V (2P0HI_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3) | Internal only | 2.15 | 2.35 | V | |
| V (2P0LO_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3) | Internal only | 1.6 | 1.85 | V | |
| V (2P0_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 1, 3) | 1.85 | 2.15 | V | ||
| V (1P2HI_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 2) | Internal only | 1.35 | 1.60 | V | |
| V (1P2LO_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 2) | Internal only | 0.85 | 1.05 | V | |
| V (1P2_VTH) | D+/D- comparator threshold for non-standard adapter detection (Divider 2) | 1.05 | 1.35 | V | ||
| R (D-_DWN) | D- pulldown for connection check | 14.25 | 24.8 | kΩ | ||
| V (6P5_VTH) | VBUS comparator threshold | Internal only | 6.3 | 6.7 | V | |
| BAT OVERVOLTAGE/CURRENT PROTECTION | BAT OVERVOLTAGE/CURRENT PROTECTION | |||||
| V BAT(OVP) | Battery over-voltage threshold | V BAT rising, as percentage of V BAT(REG) | 104% | |||
| V BAT(OVP_HYST) | Battery over-voltage hysteresis | V BAT falling, as percentage of V BAT(REG) | 2% | |||
| I BAT(FET_OCP) | System over-current threshold | 9 | A | |||
| THERMAL REGULATION AND THERMAL SHUTDOWN | THERMAL REGULATION AND THERMAL SHUTDOWN | |||||
| T REG | Junction temperature regulation accuracy | REG08[1:0] = 11 | 120 | °C | ||
| T SHUT | Thermal shutdown rising temperature | Temperature rising | 160 | °C | ||
| T SHUT(HYS) | Thermal shutdown hysteresis | Temperature falling | 30 | °C | ||
| JEITA THERMISTOR COMPARATOR (BUCK MODE) | JEITA THERMISTOR COMPARATOR (BUCK MODE) | |||||
| V (T1) | T1 (0°C) threshold, charge suspended T1 below this temperature. | As percentage to V (REGN) | 72.75% | 73.25% | 73.75% | |
| V (T1_HYS) | Charge back to ICHG/2 (REG04[6:0]) and VREG (REG06[7:2]) above this temperature. | As percentage to V (REGN) | 1.4% | |||
| V (T2) | T2 (10°C) threshold, charge back to ICHG/2 (REG04[6:0]) and VREG (REG06[7:2]) below this temperature. | As percentage to V (REGN) | 67.75% | 68.25% | 68.75% |
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| V (T2_HYS) | Charge back to ICHG (REG04[6:0]) and VREG (REG06[7:2]) above this temperature. | As percentage to V (REGN) | 1.4% | |||
| V (T3) | T3 (45°C) threshold, charge back to ICHG (REG04[6:0]) and VREG-200 mV (REG06[7:2]) above this temperature. | As percentage to V (REGN) | 44.25v | 44.75% | 45.25% | |
| V (T3_HYS) | Charge back to ICHG (REG04[6:0]) and VREG (REG06[7:2]) below this temperature. | As percentage to V (REGN) | 1% | |||
| V (T5) | T5 (60°C) threshold, charge suspended above this temperature. | As percentage to V (REGN) | 33.875% | 34.375% | 34.875% | |
| V (T5_HYS) | Charge back to ICHG (REG04[6:0]) and VREG-200 mV (REG06[7:2]) below this temperature. | As percentage to V (REGN) | 1.25% | |||
| COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) | COLD/HOT THERMISTOR COMPARATOR (BOOST MODE) |
| V (BCOLD0) | Cold temperature threshold, TS pin voltage rising threshold | As percentage to V REGN , REG01[5] = 0 (Approx. -10°C w/ 103AT) | 76.5% | 77% | 77.5% | |
| V (BCOLD0_HYS) | Cold temperature threshold, TS pin voltage falling threshold | As percentage to V REGN REG01[5] = 0 | 1% | |||
| V (BCOLD1) | Cold temperature threshold 1, TS pin voltage rising threshold | As percentage to V REGN REG01[5] = 1 (Approximately -20°C w/ 103AT) | 79.5% | 80% | 80.5% | |
| V (BCOLD1_HYS) | Cold temperature threshold 1, TS pin voltage falling threshold | As percentage to V REGN REG01[5] = 1 | 1% | |||
| V (BHOT0) | Hot temperature threshold, TS pin voltage falling threshold | As percentage to V REGN REG01[7:6] = 01 (Approx. 55°C w/ 103AT) | 37.25% | 37.75% | 38.25% | |
| V (BHOT0_HYS) | Hot temperature threshold, TS pin voltage rising threshold | As percentage to V REGN REG01[7:6] = 01 | 3% | |||
| V (BHOT1) | Hot temperature threshold 1, TS pin voltage falling threshold | As percentage to V REGN REG01[7:6] = 00 (Approx. 60°C w/ 103AT) | 33.875% | 34.375% | 34.875% | |
| V (BHOT1_HYS) | Hot temperature threshold 1, TS pin voltage rising threshold | As percentage to V REGN REG01[7:6] = 00 | 3% | |||
| V (BHOT2) | Hot temperature threshold 2, TS pin voltage falling threshold | As percentage to V REGN REG01[7:6] = 10 (Approx. 65°C w/ 103AT) | 30.75% | 31.25% | 31.75% | |
| V (BHOT2_HYS) | Hot temperature threshold 2, TS pin voltage rising threshold | As percentage to V REGN REG01[7:6] =10 | 3% | |||
| PWM | PWM | |||||
| F SW | PWM switching frequency, and digital clock | Oscillator frequency | 1.32 | 1.68 | MHz | |
| D MAX | Maximum PWM duty cycle | 97% | ||||
| BOOST MODE OPERATION | BOOST MODE OPERATION | |||||
| V (OTG_REG_RANGE) | Typical boost mode regulation voltage range | 4.55 | 5.55 | V | ||
| V (OTG_REG_STEP) | Typical boost mode regulation voltage step | 64 | mV | |||
| V (OTG_REG_ACC) | Boost mode regulation voltage accuracy | I(VBUS) = 0 A, BOOSTV=4.998V (REG0A[7:4] = 0111) | -3% | 3% | ||
| V (OTG_BAT) | Battery voltage exiting boost mode | BAT falling | 2.6 | 2.9 | V | |
| I (OTG) | Typical boost mode output current range | 0.5 | 2.45 | A | ||
| I (OTG_OCP_ACC) | Boost mode RBFET over-current protection accuracy | BOOST_LIM =1.2 A (REG0A[2:0]=010) | 1.2 | 1.65 | A | |
| V (OTG_OVP) | Boost mode over-voltage threshold | Rising threshold | 5.8 | 6 | V | |
| REGN LDO | REGN LDO | |||||
| V (REGN) | REGN LDO output voltage | V (VBUS) = 9 V, I (REGN) = 40 mA | 5.6 | 6 | 6.4 | V |
| V (VBUS) = 5 V, I (REGN) = 20 mA | 4.7 | 4.8 | V | |||
| I (REGN) | REGN LDO current limit | V (VBUS) = 9 V, V (REGN) = 3.8 V | 50 | mA | ||
| ANALOG-TO-DIGITAL CONVERTER (ADC) | ANALOG-TO-DIGITAL CONVERTER (ADC) | |||||
| RES | Resolution | Rising threshold | 7 | bits | ||
| V | Typical battery voltage range | V (VBUS) > V BAT + V (SLEEP) or OTG mode is enabled | 2.304 | 4.848 | V | |
| BAT(RANGE) | V (VBUS) < V BAT + V (SLEEP) and OTG mode is disabled | V SYS_MIN | 4.848 | V | ||
| V (BAT_RES) | Typical battery voltage resolution | 20 | mV | |||
| V (SYS_RANGE) | Typical system voltage range | V (VBUS) > V BAT + V (SLEEP) or OTG mode is enabled | 2.304 | 4.848 | V | |
| V (VBUS) < V BAT + V (SLEEP) and OTG mode is disabled | V SYS_MIN | 4.848 | V | |||
| V (SYS_RES) | Typical system voltage resolution | 20 | mV | |||
| V (VBUS_RANGE) | Typical V VBUS voltage range | V (VBUS) > V BAT + V (SLEEP) or OTG mode is enabled | 2.6 | 15.3 | V | |
| V (VBUS_RES) | Typical V VBUS voltage resolution | 100 | mV | |||
| I BAT(RANGE) | Typical battery charge current range | V (VBUS) > V BAT + V (SLEEP) and V BAT > V BAT(SHORT) | 0 | 6.4 | A |
VVBUS_UVLOZ < VVBUS < VACOV and VVBUS > VBAT + VSLEEP, TJ = -40°C to +125°C and TJ = 25°C for typical values (unless otherwise noted)
| PARAMETER | PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| I BAT(RES) | Typical battery charge current resolution | 50 | mA | |||
| V (TS_RANGE) | Typical TS voltage range | 21% | 80% | |||
| V (TS_RES) | Typical TS voltage resolution | 0.47% | ||||
| LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) | LOGIC I/O PIN (OTG, CE, PSEL, QON) |
| V IH | Input high threshold level | 1.3 | ||||
| V IL | Input low threshold level | 0.4 | V | |||
| I IN(BIAS) | High Level Leakage Current | Pull-up rail 1.8 V | 1 | μA | ||
| V (QON) | Internal /QON pull-up | Battery only mode | BAT | V | ||
| V (QON) | Internal /QON pull-up | V (VBUS) = 9 V | 5.8 | V | ||
| V (QON) | Internal /QON pull-up | V (VBUS) = 5 V | 4.3 | V | ||
| R (QON) | Internal /QON pull-up resistance | 200 | kΩ | |||
| LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) | LOGIC I/O PIN (INT, STAT, PG , DSEL) |
| V OL | Output low threshold level | Sink current = 5 mA, sink current | 0.4 | V | ||
| I OUT_BIAS | High level leakage current | Pull-up rail 1.8 V | 1 | μA | ||
| I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) | I 2 C INTERFACE (SCL, SDA) |
| V IH | Input high threshold level, SCL and SDA | Pull-up rail 1.8 V | 1.3 | |||
| V IL | Input low threshold level | Pull-up rail 1.8 V | 0.4 | V | ||
| V OL | Output low threshold level | Sink current = 5 mA, sink current | 0.4 | V | ||
| I BIAS | High level leakage current | Pull-up rail 1.8 V | 1 | μA |
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
| MIN | MAX | VALUE | ||
|---|---|---|---|---|
| Voltage range (with respect to GND) | VBUS (converter not switching) | -2 | 22 | V |
| Voltage range (with respect to GND) | PMID (converter not switching) | -0.3 | 22 | V |
| Voltage range (with respect to GND) | STAT | -0.3 | 20 | V |
| Voltage range (with respect to GND) | PG (BQ25892) | -0.3 | 7 | V |
| Voltage range (with respect to GND) | DSEL (BQ25890) | -0.3 | 20 | V |
| Voltage range (with respect to GND) | BTST | -0.3 | 20 | V |
| Voltage range (with respect to GND) | SW | -2 | 16 | V |
| Voltage range (with respect to GND) | SW (peak for 10 ns duration) | -3 | 16 | V |
| Voltage range (with respect to GND) | BAT, SYS (converter not switching) | -0.3 | 6 | V |
| Voltage range (with respect to GND) | SDA, SCL, INT, OTG, REGN, TS, CE, QON | -0.3 | 7 | V |
| Voltage range (with respect to GND) | PSEL (BQ25892) | -0.3 | 7 | V |
| Voltage range (with respect to GND) | D+, D- (BQ25890) | -0.3 | 7 | V |
| Voltage range (with respect to GND) | BTST TO SW | -0.3 | 7 | V |
| Voltage range (with respect to GND) | PGND to GND | -0.3 | 0.3 | V |
| Voltage range (with respect to GND) | ILIM | -0.3 | 5 | V |
| Output sink current | INT, STAT | 6 | mA | |
| Output sink current | PG (BQ25892) | 6 | mA | |
| Output sink current | DSEL (BQ25890) | 6 | mA | |
| Junction temperature | -40 | 150 | °C | |
| Storage temperature range, T stg | -65 | 150 | °C |
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| V IN | Input voltage | 3.9 | 14 (1) | V | |
| I IN | Input current (VBUS) | 3.25 | A | ||
| I SYS | Output current (SW) | 5 | A | ||
| V BAT | Battery voltage | 4.608 | V | ||
| I BAT | Fast charging current | 5 | A | ||
| I BAT | Discharging current with internal MOSFET | to 6 (continuos) | A | ||
| I BAT | Discharging current with internal MOSFET | 9 (peak) 1 sec duration) | A |
Thermal Information
| THERMAL METRIC (1) | THERMAL METRIC (1) | BQ25890 BQ25892 RTW (WQFN) 24-PINS | UNIT |
|---|---|---|---|
| R θJA | Junction-to-ambient thermal resistance | 31.8 | °C/W |
| R θJC((op) | Junction-to-case (top) thermal resistance | 27.9 | °C/W |
| R θJB | Junction-to-board thermal resistance | 8.7 | °C/W |
| ψ JT | Junction-to-top characterization parameter | 0.3 | °C/W |
| ψ JB | Junction-to-board characterization parameter | 8.7 | °C/W |
| R θJC(bot) | Junction-to-case (bottom) thermal resistance | 2 | °C/W |
Typical Application
A typical application consists of the device configured as an I 2 C controlled power path management device and a single cell battery charger for Li-Ion and Li-polymer batteries used in a wide range of smartphones and other portable devices. It integrates an input reverse-block FET (RBFET, Q1), high-side switching FET (HSFET, Q2), low-side switching FET (LSFET, Q3), and BATFET (Q4) between the system and battery. The device also integrates a bootstrap diode for the high-side gate drive.
Related Variants
The following components are covered by the same datasheet.
| Part Number | Manufacturer | Package |
|---|---|---|
| BQ25890 | Texas Instruments | — |
| BQ25892 | Texas Instruments | — |
| BQ25892RTWR.A | Texas Instruments | — |
| BQ25892RTWR.B | Texas Instruments | — |
| BQ25892RTWT | Texas Instruments | 24-WFQFN Exposed Pad |
| BQ25892RTWT.A | Texas Instruments | — |
| BQ25892RTWT.B | Texas Instruments | — |
| BQ2589X | Texas Instruments | — |
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