BPV10NF
The BPV10NF is an electronic component from Vishay. View the full BPV10NF datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Vishay
Category
Photodiodes
Package
Radial
Lifecycle
Production (Last Updated: 3 weeks ago)
Key Specifications
| Parameter | Value |
|---|---|
| Active Area | 0.79mm² |
| Ambient Temperature Range High | 100 °C |
| Bandwidth | 100 MHz |
| Breakdown Voltage | 60 V |
| Capacitance | 11 pF |
| Case/Package | Radial |
| Contact Plating | Tin |
| Current - Dark (Typ) | 1nA |
| Dark Current | 5 nA |
| Diode Type | PIN |
| Diode Type | PIN |
| Fall Time | 2.5 ns |
| Forward Current | 50 mA |
| Forward Voltage | 850 mV |
| Height | 9.6 mm |
| Introduction Date | 1995-08-01 |
| Lead Free | Lead Free |
| Lead Length | 26.3 mm |
| Length | 5.75 mm |
| Lifecycle Status | Production (Last Updated: 3 weeks ago) |
| Max Junction Temperature (Tj) | 100 °C |
| Max Operating Temperature | 100 °C |
| Max Power Dissipation | 215 mW |
| Max Reverse Voltage (DC) | 60 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Circuits | 1 |
| Number of Pins | 2 |
| Operating Temperature | -40°C ~ 100°C |
| Package / Case | Radial |
| Packaging | Bulk |
| Peak Wavelength | 940 nm |
| Power Dissipation | 215 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Breakdown Voltage | 60 V |
| Reverse Voltage | 60 V |
| Reverse Voltage (DC) | 60 V |
| Rise Time | 2.5 ns |
| RoHS | Compliant |
| Schedule B | 8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050 |
| Shape | Round |
| Spectral Range | 790nm ~ 1050nm |
| Viewing Angle | 40° |
| Viewing Angle | 40 ° |
| Reverse Voltage (Max) | 60 V |
| Wavelength | 915 nm |
| Wavelength | 940nm |
| Width | 5.75 mm |
Overview
BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs ( λ = 950 nm) and GaAlAs ( λ = 870 nm) IR emitters.
BPV10NF is optimized for serial infrared links according to the IrDA standard.
Features
- Extra fast response times
- High modulation bandwidth (>100 MHz)
- High radiant sensitivity
- Radiant sensitive area A = 0.78 mm 2
- Low junction capacitance
- Standard T-1¾ ( ∅ 5 mm) package with universal IR filter
- Angle of half sensitivity ϕ = ± 20°
- Lead-free component
- Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links.
BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK- coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...-series or TSSF 4500.
Pin Configuration
BPV10NF – Radial Package Pinout
| Pin Number | Pin Name | Type | Description |
|---|---|---|---|
| 1 | Cathode (–) | P | Cathode; connected to case |
| 2 | Anode (+) | P | Anode |
Notes
- BPV10NF is a 2-pin radial PIN photodiode in a standard T-1¾ (∅ 5 mm) plastic package.
- Pin 1 (Cathode) is internally connected to the metal case.
- The device is optimized for infrared detection at λ = 870 nm and λ = 950 nm (IrDA standard).
- Maximum reverse voltage: 60 V; typical reverse dark current at 20 V: 1 nA.
- Lead-free, RoHS 2002/95/EC compliant.
Electrical Characteristics
T amb = 25 °C, unless otherwise specified
| Parameter | Test condition | Symbol | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | I F = 50 mA | V F | 1 | 1.3 | V | |
| Breakdown Voltage | I R = 100 μ A, E = 0 | V (BR) | 60 | V | ||
| Reverse Dark Current | V R = 20 V, E = 0 | I ro | 1 | 5 | nA | |
| Diode capacitance | V R = 0 V, f = 1 MHz, E = 0 | C D | 11 | pF |
Absolute Maximum Ratings
T amb = 25 °C, unless otherwise specified
| Parameter | Test condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Reverse Voltage | V R | 60 | V | |
| Power Dissipation | T amb ≤ 25 °C | P V | 215 | mW |
| Junction Temperature | T j | 100 | °C | |
| Operating Temperature Range | T amb | - 55 to + 100 | °C | |
| Storage Temperature Range | T stg | - 55 to + 100 | °C | |
| Soldering Temperature | 2 mm from body, t ≤ 5 s | T sd | 260 | °C |
| Thermal Resistance Junction/ Ambient | R thJA | 350 | K/W |
Package Information
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