BPV10NF
High Speed Silicon PIN PhotodiodeThe BPV10NF is a high speed silicon pin photodiode from Vishay Intertechnology. View the full BPV10NF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official BPV10NF datasheet (PDF) — the source this page was extracted from.
Manufacturer
Vishay IntertechnologyCategory
PhotodiodesPackage
Radial
Lifecycle
Production (Last Updated: 3 weeks ago)
BPV10NF Key Specifications
| Parameter | Value |
|---|---|
| Active Area | 0.79mm² |
| Ambient Temperature Range High | 100 °C |
| Bandwidth | 100 MHz |
| Breakdown Voltage | 60 V |
| Capacitance | 11 pF |
| Case/Package | Radial |
| Contact Plating | Tin |
| Current - Dark (Typ) | 1nA |
| Dark Current | 5 nA |
| Diode Type | PIN |
| Diode Type | PIN |
| Fall Time | 2.5 ns |
| Forward Current | 50 mA |
| Forward Voltage | 850 mV |
| Height | 9.6 mm |
| Introduction Date | 1995-08-01 |
| Lead Free | Lead Free |
| Lead Length | 26.3 mm |
| Length | 5.75 mm |
| Lifecycle Status | Production (Last Updated: 3 weeks ago) |
| Max Junction Temperature (Tj) | 100 °C |
| Max Operating Temperature | 100 °C |
| Max Power Dissipation | 215 mW |
| Max Reverse Voltage (DC) | 60 V |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Number of Circuits | 1 |
| Number of Pins | 2 |
| Operating Temperature | -40°C ~ 100°C |
| Package / Case | Radial |
| Packaging | Bulk |
| Peak Wavelength | 940 nm |
| Power Dissipation | 215 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Breakdown Voltage | 60 V |
| Reverse Voltage | 60 V |
| Reverse Voltage (DC) | 60 V |
| Rise Time | 2.5 ns |
| RoHS | Compliant |
| Schedule B | 8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050 |
| Shape | Round |
| Spectral Range | 790nm ~ 1050nm |
| Viewing Angle | 40° |
| Viewing Angle | 40 ° |
| Reverse Voltage (Max) | 60 V |
| Wavelength | 915 nm |
| Wavelength | 940nm |
| Width | 5.75 mm |
BPV10NF Overview
Part: BPV10NF — Vishay Semiconductor
Type: High Speed Silicon PIN Photodiode
Description: High-sensitivity, wide-bandwidth PIN photodiode in a T-1¾ (Ø 5 mm) plastic package with >100 MHz modulation bandwidth and a 0.78 mm² radiant sensitive area, optimized for IrDA serial infrared links.
Operating Conditions:
- Operating temperature: -55 to +100 °C (ambient)
- Spectral range: 790 to 1050 nm (λ0.5)
- Angle of half sensitivity: ±20°
Absolute Maximum Ratings:
- Max reverse voltage: 60 V
- Max power dissipation: 215 mW (T amb ≤ 25 °C)
- Max junction temperature: 100 °C
- Storage temperature: -55 to +100 °C
- Soldering temperature: 260 °C (2 mm from body, t ≤ 5 s)
Key Specs:
- Breakdown voltage: 60 V min (I R = 100 μA, E = 0)
- Reverse dark current: 1 nA typ, 5 nA max (V R = 20 V, E = 0)
- Diode capacitance: 11 pF typ (V R = 0 V, f = 1 MHz, E = 0)
- Forward voltage: 1 V typ, 1.3 V max (I F = 50 mA)
- Reverse light current: 60 μA typ, 30 μA min (E e = 1 mW/cm², λ = 950 nm, V R = 5 V)
- Short-circuit current: 50 μA typ (E e = 1 mW/cm², λ = 870 nm)
- Rise/fall time: 2.5 ns typ each (V R = 50 V, R L = 50 Ω, λ = 820 nm)
Features:
- Extra fast response times
- Modulation bandwidth >100 MHz
- High radiant sensitivity
- Low junction capacitance
- Universal IR filter (spectrally matched to GaAs 950 nm and GaAlAs 870 nm emitters)
- Lead-free, RoHS 2002/95/EC and WEEE 2002/96/EC compliant
Applications:
- Infrared high-speed remote control and free-air transmission systems
- IrDA serial infrared links
- Carrier-frequency based systems (e.g. ASK/FSK-coded, 450 kHz or 1.3 MHz)
- Direct point-to-point optical links
Package:
- T-1¾ (Ø 5 mm) plastic through-hole package with universal IR filter
BPV10NF Features
- Extra fast response times
- High modulation bandwidth (>100 MHz)
- High radiant sensitivity
- Radiant sensitive area A = 0.78 mm 2
- Low junction capacitance
- Standard T-1¾ ( ∅ 5 mm) package with universal IR filter
- Angle of half sensitivity ϕ = ± 20°
- Lead-free component
- Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
BPV10NF Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links.
BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK- coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...-series or TSSF 4500.
BPV10NF Electrical Characteristics
T amb = 25 °C, unless otherwise specified
| Parameter | Test condition | Symbol | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | I F = 50 mA | V F | 1 | 1.3 | V | |
| Breakdown Voltage | I R = 100 μ A, E = 0 | V (BR) | 60 | V | ||
| Reverse Dark Current | V R = 20 V, E = 0 | I ro | 1 | 5 | nA | |
| Diode capacitance | V R = 0 V, f = 1 MHz, E = 0 | C D | 11 | pF |
BPV10NF Absolute Maximum Ratings
T amb = 25 °C, unless otherwise specified
| Parameter | Test condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Reverse Voltage | V R | 60 | V | |
| Power Dissipation | T amb ≤ 25 °C | P V | 215 | mW |
| Junction Temperature | T j | 100 | °C | |
| Operating Temperature Range | T amb | - 55 to + 100 | °C | |
| Storage Temperature Range | T stg | - 55 to + 100 | °C | |
| Soldering Temperature | 2 mm from body, t ≤ 5 s | T sd | 260 | °C |
| Thermal Resistance Junction/ Ambient | R thJA | 350 | K/W |
BPV10NF Package Information
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