Skip to main content

We use cookies to understand how you use our site and improve your experience. See our Privacy Policy.

BPV10NF

High Speed Silicon PIN Photodiode

The BPV10NF is a high speed silicon pin photodiode from Vishay Intertechnology. View the full BPV10NF datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official BPV10NF datasheet (PDF) — the source this page was extracted from.

Category

Photodiodes

Package

Radial

Lifecycle

Production (Last Updated: 3 weeks ago)

BPV10NF Key Specifications

ParameterValue
Active Area0.79mm²
Ambient Temperature Range High100 °C
Bandwidth100 MHz
Breakdown Voltage60 V
Capacitance11 pF
Case/PackageRadial
Contact PlatingTin
Current - Dark (Typ)1nA
Dark Current5 nA
Diode TypePIN
Diode TypePIN
Fall Time2.5 ns
Forward Current50 mA
Forward Voltage850 mV
Height9.6 mm
Introduction Date1995-08-01
Lead FreeLead Free
Lead Length26.3 mm
Length5.75 mm
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Max Junction Temperature (Tj)100 °C
Max Operating Temperature100 °C
Max Power Dissipation215 mW
Max Reverse Voltage (DC)60 V
Min Operating Temperature-55 °C
MountThrough Hole
Mounting TypeThrough Hole
Number of Circuits1
Number of Pins2
Operating Temperature-40°C ~ 100°C
Package / CaseRadial
PackagingBulk
Peak Wavelength940 nm
Power Dissipation215 mW
Radiation HardeningNo
REACH SVHCYes
Reverse Breakdown Voltage60 V
Reverse Voltage60 V
Reverse Voltage (DC)60 V
Rise Time2.5 ns
RoHSCompliant
Schedule B8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050
ShapeRound
Spectral Range790nm ~ 1050nm
Viewing Angle40°
Viewing Angle40 °
Reverse Voltage (Max)60 V
Wavelength915 nm
Wavelength940nm
Width5.75 mm

BPV10NF Overview

Part: BPV10NF — Vishay Semiconductor

Type: High Speed Silicon PIN Photodiode

Description: High-sensitivity, wide-bandwidth PIN photodiode in a T-1¾ (Ø 5 mm) plastic package with >100 MHz modulation bandwidth and a 0.78 mm² radiant sensitive area, optimized for IrDA serial infrared links.

Operating Conditions:

  • Operating temperature: -55 to +100 °C (ambient)
  • Spectral range: 790 to 1050 nm (λ0.5)
  • Angle of half sensitivity: ±20°

Absolute Maximum Ratings:

  • Max reverse voltage: 60 V
  • Max power dissipation: 215 mW (T amb ≤ 25 °C)
  • Max junction temperature: 100 °C
  • Storage temperature: -55 to +100 °C
  • Soldering temperature: 260 °C (2 mm from body, t ≤ 5 s)

Key Specs:

  • Breakdown voltage: 60 V min (I R = 100 μA, E = 0)
  • Reverse dark current: 1 nA typ, 5 nA max (V R = 20 V, E = 0)
  • Diode capacitance: 11 pF typ (V R = 0 V, f = 1 MHz, E = 0)
  • Forward voltage: 1 V typ, 1.3 V max (I F = 50 mA)
  • Reverse light current: 60 μA typ, 30 μA min (E e = 1 mW/cm², λ = 950 nm, V R = 5 V)
  • Short-circuit current: 50 μA typ (E e = 1 mW/cm², λ = 870 nm)
  • Rise/fall time: 2.5 ns typ each (V R = 50 V, R L = 50 Ω, λ = 820 nm)

Features:

  • Extra fast response times
  • Modulation bandwidth >100 MHz
  • High radiant sensitivity
  • Low junction capacitance
  • Universal IR filter (spectrally matched to GaAs 950 nm and GaAlAs 870 nm emitters)
  • Lead-free, RoHS 2002/95/EC and WEEE 2002/96/EC compliant

Applications:

  • Infrared high-speed remote control and free-air transmission systems
  • IrDA serial infrared links
  • Carrier-frequency based systems (e.g. ASK/FSK-coded, 450 kHz or 1.3 MHz)
  • Direct point-to-point optical links

Package:

  • T-1¾ (Ø 5 mm) plastic through-hole package with universal IR filter

BPV10NF Features

  • Extra fast response times
  • High modulation bandwidth (>100 MHz)
  • High radiant sensitivity
  • Radiant sensitive area A = 0.78 mm 2
  • Low junction capacitance
  • Standard T-1¾ ( ∅ 5 mm) package with universal IR filter
  • Angle of half sensitivity ϕ = ± 20°
  • Lead-free component
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BPV10NF Applications

Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links.

BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK- coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...-series or TSSF 4500.

BPV10NF Electrical Characteristics

T amb = 25 °C, unless otherwise specified

ParameterTest conditionSymbolMinTyp.MaxUnit
Forward VoltageI F = 50 mAV F11.3V
Breakdown VoltageI R = 100 μ A, E = 0V (BR)60V
Reverse Dark CurrentV R = 20 V, E = 0I ro15nA
Diode capacitanceV R = 0 V, f = 1 MHz, E = 0C D11pF

BPV10NF Absolute Maximum Ratings

T amb = 25 °C, unless otherwise specified

ParameterTest conditionSymbolValueUnit
Reverse VoltageV R60V
Power DissipationT amb ≤ 25 °CP V215mW
Junction TemperatureT j100°C
Operating Temperature RangeT amb- 55 to + 100°C
Storage Temperature RangeT stg- 55 to + 100°C
Soldering Temperature2 mm from body, t ≤ 5 sT sd260°C
Thermal Resistance Junction/ AmbientR thJA350K/W

BPV10NF Package Information

More datasheets

All Vishay Intertechnology datasheets (32)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Ask your AI agent about the BPV10NF

Connect SheetsData to Claude, Cursor, Codex or any MCP client and your agent reads this datasheet for you: pinout, limits, register maps and design checks, with the numbers taken from the PDF.

claude mcp add --transport http sheetsdata https://mcp.sheetsdata.com/mcp

Then ask: "Can the BPV10NF run from my 12 V rail? Check it against the datasheet limits."

Create a free account $2 of usage every month, no card needed.