BAT46X
The BAT46X is an electronic component from Born Semiconductor. View the full BAT46X datasheet below including key specifications, pinout, electrical characteristics, absolute maximum ratings.
Manufacturer
Born Semiconductor
Category
Schottky Diodes
Package
SC-79, SOD-523
Lifecycle
Active
Key Specifications
| Parameter | Value |
|---|---|
| Current - Average Rectified (Io) | 150mA |
| Reverse Leakage Current | 2 µA @ 75 V |
| Mounting Type | Surface Mount |
| Package / Case | SC-79, SOD-523 |
| Reverse Recovery Time | 5 ns |
| Supplier Device Package | SOD-523 |
| Diode Technology | Schottky |
| Reverse Voltage (Max) | 100 V |
| Forward Voltage (Max) | 1 V @ 250 mA |
Overview
-
Case: molded plastic
-
Polarity: Color band denotes cathode
-
Package: SOD- 5 23 Plastic Package
Features
- Low forward voltage drop
- High current capability
- High reliability
- High surge current capability
- Epitaxial construction
Pin Configuration
| Pin | Name | Type | Description |
|---|---|---|---|
| 1 | A | P | Anode |
| 2 | K | P | Cathode |
Electrical Characteristics
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| V(BR) | Reverse breakdown voltage | IR=100μA | 100 | V | ||
| IR | Reverse voltage leakage current | VR1=1.5V | 0.3 | μA | ||
| IR | Reverse voltage leakage current | VR2=10V | 0.5 | μA | ||
| IR | Reverse voltage leakage current | VR3=50V | 1 | μA | ||
| IR | Reverse voltage leakage current | VR4=75V | 2 | μA | ||
| VF(1) | Forward voltage | IF=0.1mA | 0.25 | V | ||
| VF(2) | Forward voltage | IF=10mA | 0.45 | V | ||
| VF(3) | Forward voltage | IF=250mA | 1 | V | ||
| CT | Diode capacitance | VR=0V, f=1.0MHz | 20 | pF | ||
| CT | Diode capacitance | VR=1V, f=1.0MHz | 12 | pF |
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VRRM VRWM | Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage | 100 | V |
| IFM | Forward Continuous Current | 150 | mA |
| IFRM | Repetitive peak forward current @tp<1.0s, Duty Cycle < 50% | 350 | mA |
| IFSM | Non-repetitive Peak Forward Surge Current@8.3mS | 750 | mA |
| Pd | Power Dissipation | 150 | mW |
| RΘJA | Thermal Resistance From Junction To Ambient | 667 | °C /W |
| TJ | Operation Junction Temperature Range | -40~+125 | °C |
| TSTG | Storage Temperature Range | -55~+150 | °C |
Package Information
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