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BAT46X

Schottky Barrier Diode

The BAT46X is a schottky barrier diode from Born Semiconductor. View the full BAT46X datasheet below including key specifications, electrical characteristics, absolute maximum ratings.

Official BAT46X datasheet (PDF) — the source this page was extracted from.

Manufacturer

Born Semiconductor

Category

Diodes

Package

SC-79, SOD-523

Lifecycle

Active

BAT46X Key Specifications

ParameterValue
Current - Average Rectified (Io)150mA
Reverse Leakage Current2 µA @ 75 V
Mounting TypeSurface Mount
Package / CaseSC-79, SOD-523
Reverse Recovery Time5 ns
Supplier Device PackageSOD-523
Diode TechnologySchottky
Reverse Voltage (Max)100 V
Forward Voltage (Max)1 V @ 250 mA

BAT46X Overview

Part: BAT46X

Type: Schottky Barrier Diode

Description: 100 V, 150 mA planar epitaxial Schottky barrier diode in a small SOD-523 package.

Operating Conditions:

  • Operating junction temperature: -40 to +125 °C

Absolute Maximum Ratings:

  • Peak repetitive reverse voltage: 100 V
  • Working peak reverse voltage: 100 V
  • Forward continuous current: 150 mA
  • Repetitive peak forward current: 350 mA (tp < 1.0 s, duty cycle < 50%)
  • Non-repetitive peak forward surge current: 750 mA (8.3 ms)
  • Power dissipation: 150 mW
  • Max junction/storage temperature: 150 °C (storage), 125 °C (junction)

Key Specs:

  • Reverse breakdown voltage: min 100 V (IR = 100 μA)
  • Forward voltage: max 0.25 V (IF = 0.1 mA)
  • Forward voltage: max 0.45 V (IF = 10 mA)
  • Forward voltage: max 1 V (IF = 250 mA)
  • Reverse leakage current: max 0.3 μA (VR = 1.5 V)
  • Reverse leakage current: max 2 μA (VR = 75 V)
  • Diode capacitance: typ 20 pF (VR = 0 V, f = 1.0 MHz)
  • Diode capacitance: typ 12 pF (VR = 1 V, f = 1.0 MHz)
  • Thermal resistance, junction to ambient: 667 °C/W

Features:

  • Low forward voltage drop
  • High current capability
  • High reliability
  • High surge current capability
  • Epitaxial construction

Package:

  • SOD-523

BAT46X Features

  • Low forward voltage drop
  • High current capability
  • High reliability
  • High surge current capability
  • Epitaxial construction

BAT46X Electrical Characteristics

SymbolParameterTest conditionsMinTypMaxUnit
V(BR)Reverse breakdown voltageIR=100μA100V
IRReverse voltage leakage currentVR1=1.5V0.3μA
IRReverse voltage leakage currentVR2=10V0.5μA
IRReverse voltage leakage currentVR3=50V1μA
IRReverse voltage leakage currentVR4=75V2μA
VF(1)Forward voltageIF=0.1mA0.25V
VF(2)Forward voltageIF=10mA0.45V
VF(3)Forward voltageIF=250mA1V
CTDiode capacitanceVR=0V, f=1.0MHz20pF
CTDiode capacitanceVR=1V, f=1.0MHz12pF

BAT46X Absolute Maximum Ratings

SymbolParameterValueUnit
VRRM VRWMPeak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage100V
IFMForward Continuous Current150mA
IFRMRepetitive peak forward current @tp<1.0s, Duty Cycle < 50%350mA
IFSMNon-repetitive Peak Forward Surge Current@8.3mS750mA
PdPower Dissipation150mW
RΘJAThermal Resistance From Junction To Ambient667°C /W
TJOperation Junction Temperature Range-40~+125°C
TSTGStorage Temperature Range-55~+150°C

BAT46X Package Information

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  • PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
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All Diodes datasheets

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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