2N3904

NPN General - Purpose Amplifier

The 2N3904 is a npn general - purpose amplifier from Diotec Semiconductor. View the full 2N3904 datasheet below including key specifications, absolute maximum ratings.

Manufacturer

Diotec Semiconductor

Key Specifications

Parameter	Value
Collector Current (Max)	200 mA
Current - Collector Cutoff (Max)	0.1µA (ICBO)
DC Current Gain (hFE)	100 @ 10mA, 1V
Transition Frequency	300MHz
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Power (Max)	625 mW
Supplier Device Package	TO-92
Transistor Type	NPN
Vce Saturation	300mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage	40 V

Overview

Part: 2N3904 from onsemi

Type: NPN General-Purpose Amplifier and Switch

Description: NPN general-purpose amplifier and switch designed for dynamic range up to 100 mA as a switch and up to 100 MHz as an amplifier, featuring a 40 V collector-emitter breakdown voltage and 200 mA continuous collector current.

Operating Conditions:

Supply voltage: Not applicable (breakdown voltages are specified)
Operating temperature: -55 to +150 °C (Junction and Storage)
Max useful switching current: 100 mA
Max useful amplifier frequency: 100 MHz

Absolute Maximum Ratings:

Max Collector-Emitter Voltage (VCEO): 40 V
Max Collector-Base Voltage (VCBO): 60 V
Max Emitter-Base Voltage (VEBO): 6.0 V
Max continuous current (IC): 200 mA
Max junction/storage temperature: +150 °C

Key Specs:

Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 V (min, at IC = 1.0 mA, IB = 0)
DC Current Gain (hFE): 100-300 (at IC = 10 mA, VCE = 1.0 V)
Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (max, at IC = 10 mA, IB = 1.0 mA)
Current-Gain-Bandwidth Product (fT): 300 MHz (min, at IC = 10 mA, VCE = 20 V, f = 100 MHz)
Output Capacitance (Cobo): 4.0 pF (max, at VCB = 5.0 V, IE = 0, f = 100 kHz)
Delay Time (td): 35 ns (max, at VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA)
Storage Time (ts): 200 ns (max, at VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA)
Noise Figure (NF): 5.0 dB (max, at IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz)

Features:

General-purpose amplifier
General-purpose switch
Useful dynamic range extends to 100 mA as a switch
Useful dynamic range extends to 100 MHz as an amplifier

Applications:

General-purpose amplification
Switching applications

Package:

TO-92-3 (CASE 135AN)
TO-92-3 LF (CASE 135AR)

Absolute Maximum Ratings

(Values are at T A = 25 ° C unless otherwise noted.) (Note 1, Note 2)

Symbol	Parameter	Value	Unit
V CEO	Collector - Emitter Voltage	40	V
V CBO	Collector - Base Voltage	60	V
V EBO	Emitter - Base Voltage	6.0	V
I C	Collector Current - Continuous	200	mA
T J , T STG	Operating and Storage Junction Temperature Range	- 55 to +150	° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

These ratings are based on a maximum junction temperature of 150 ° C.
These are steady -state limits. onsemi should be consulted on applications involving pulsed orlow -duty cycle operations.

Thermal Information

(Values are at T A = 25 ° C unless otherwise noted.)

TO -92 3 CASE 135AN

Symbol	Parameter	Max	Unit
P D	Total Device Dissipation	625	mW
	Derate Above 25 ° C	5	mW/ ° C
R q JC	Thermal Resistance, Junction to Case	83.3	° C/W
R q JA	Thermal Resistance, Junction to Ambient	200	° C/W

TO -92 3 CASE 135AN

TO -92 3 LEADFORMED CASE 135AR

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free