2N3904

NPN General - Purpose Amplifier

Manufacturer

unknown

Overview

Part: 2N3904, onsemi

Type: NPN General - Purpose Amplifier

Key Specs:

  • Collector−Emitter Voltage (VCEO): 40 V
  • Collector Current − Continuous (IC): 200 mA
  • Operating and Storage Junction Temperature Range (TJ, TSTG): −55 to +150 °C
  • Total Device Dissipation (PD): 625 mW
  • Current−Gain−Bandwidth Product (fT): 300 MHz

Features:

  • Designed as a general−purpose amplifier
  • Designed as a switch
  • Useful dynamic range extends to 100 mA as a switch
  • Useful dynamic range extends to 100 MHz as an amplifier

Applications:

  • null

Package:

  • TO−92 3 LEADFORMED CASE 135AR: null

Electrical Characteristics

SymbolParametrConditionsMinMaxUnit
FF CHARACTERRISTICS•••·•
V (BR)CEOCollector - Emitter Breakdown Voltage$I_C = 1.0 \text{ mA}, I_B = 0$40-V
V (BR)CBOCollector - Base Breakdown Voltage$I_C = 10 \mu A, I_E = 0$60-V
V (BR)EBOEmitter – Base Breakdown Voltage$I_E = 10 \mu A, I_C = 0$6.0-V
I BLBase Cutoff CurrentV CE = 30 V, V EB = 3 V-50nA
I CEXCollector Cut-Off CurrentV CE = 30 V, V EB = 3 V-50nA
N CHARACTERISTICS (Note 3)
h FEDC Current GainI C = 0.1 mA, V CE = 1.0 V40--
I C = 1.0 mA, V CE = 1.0 V70-
I C = 10 mA, V CE = 1.0 V100300
$I_C = 50 \text{ mA}, V_{CE} = 1.0 \text{ V}$60-
I C = 100 mA, V CE = 1.0 V30-
V CE(sat)Collector - Emitter Saturation VoltageI C = 10 mA, I B = 1.0 mA-0.2V
$I_C = 50.0 \text{ mA}, I_B = 5.0 \text{ mA}$-0.31
V BE(sat)Base - Emitter Saturation VoltageI C = 10.0 mA, I B = 1.0 mA0.650.85V
$I_C = 50.0 \text{ mA}, I_B = 5.0 \text{ mA}$-0.951
MALL-SIGNALCHARACTERISTICS••••
f TCurrent - Gain - Bandwidth Product$I_C = 10 \text{ mA}, V_{CE} = 20 \text{ V},$
f = 100 MHz		300_MHz
$C_{obo}$Output CapacitanceV CB = 5.0 V, I E = 0,
f = 100 kHz		_4.0pF
C iboInput CapacitanceV EB = 0.5 V, I C = 0,
f = 100 kHz		_8.0pF
NFNoise Figure$I_{C}$ = 100 $\mu$ A, $V_{CE}$ = 5.0 V, $R_{S}$ = 1.0 k $\Omega$ , f = 10 Hz to 15.7 kHz-5.0dB
WITCHING CHARACTERISTICS•_--
t dDelay TimeV CC = 3.0 V, V BE = 0.5 V,
I C = 10 mA, I B1 = 1.0 mA		-35ns
t rRise Time-35ns
t sStorage Time$V_{CC} = 3.0 \text{ V, } I_{C} = 10 \text{ mA,}$ $I_{B1} = I_{B2} = 1.0 \text{ mA}$-200ns
t fFall Time_50ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

  1. Pulse Test: Pulse Width $\leq$ 300 $\mu$ s; Duty Cycle $\leq$ 2%.

Absolute Maximum Ratings

(Values are at TA = 25°C unless otherwise noted.) (Note 1, Note 2)

SymbolParameterValueUnit
VCEOCollector−Emitter Voltage40V
VCBOCollector−Base Voltage60V
VEBOEmitter−Base Voltage6.0V
ICCollector Current − Continuous200mA
TJ, TSTGOperating and Storage Junction
Temperature Range		−55 to +150°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

    1. These ratings are based on a maximum junction temperature of 150°C.
    1. These are steady−state limits. onsemi should be consulted on applications involving pulsed orlow−duty cycle operations.

Thermal Information

(Values are at TA = 25°C unless otherwise noted.)

SymbolParameterMaxUnit
PDTotal Device Dissipation625mW
Derate Above 25°C5.0mW/°C
R
JC		Thermal Resistance,
Junction to Case		83.3°C/W
R
JA		Thermal Resistance,
Junction to Ambient		200°C/W

TO−92 3 LEADFORMED CASE 135AR

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

Get structured datasheet data via API

Get started free