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2N3904

NPN General - Purpose Amplifier

The 2N3904 is a npn general - purpose amplifier from onsemi. View the full 2N3904 datasheet below including key specifications, absolute maximum ratings.

Official 2N3904 datasheet (PDF) — the source this page was extracted from.

Manufacturer

onsemi

Package

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

2N3904 Key Specifications

ParameterValue
Collector Current (Max)200 mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE)30 @ 100mA, 1V
Transition Frequency300MHz
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingBulk
Power (Max)200 mW
Standard Pack Qty2500
Supplier Device PackageSOT-23
Transistor TypeNPN
Vce Saturation300mV @ 5mA, 50mA
Collector-Emitter Breakdown Voltage40 V

2N3904 Overview

Part: 2N3904 from onsemi

Type: NPN General-Purpose Amplifier and Switch

Description: NPN general-purpose amplifier and switch designed for dynamic range up to 100 mA as a switch and up to 100 MHz as an amplifier, featuring a 40 V collector-emitter breakdown voltage and 200 mA continuous collector current.

Operating Conditions:

  • Supply voltage: Not applicable (breakdown voltages are specified)
  • Operating temperature: -55 to +150 °C (Junction and Storage)
  • Max useful switching current: 100 mA
  • Max useful amplifier frequency: 100 MHz

Absolute Maximum Ratings:

  • Max Collector-Emitter Voltage (VCEO): 40 V
  • Max Collector-Base Voltage (VCBO): 60 V
  • Max Emitter-Base Voltage (VEBO): 6.0 V
  • Max continuous current (IC): 200 mA
  • Max junction/storage temperature: +150 °C

Key Specs:

  • Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 V (min, at IC = 1.0 mA, IB = 0)
  • DC Current Gain (hFE): 100-300 (at IC = 10 mA, VCE = 1.0 V)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (max, at IC = 10 mA, IB = 1.0 mA)
  • Current-Gain-Bandwidth Product (fT): 300 MHz (min, at IC = 10 mA, VCE = 20 V, f = 100 MHz)
  • Output Capacitance (Cobo): 4.0 pF (max, at VCB = 5.0 V, IE = 0, f = 100 kHz)
  • Delay Time (td): 35 ns (max, at VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA)
  • Storage Time (ts): 200 ns (max, at VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA)
  • Noise Figure (NF): 5.0 dB (max, at IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz)

Features:

  • General-purpose amplifier
  • General-purpose switch
  • Useful dynamic range extends to 100 mA as a switch
  • Useful dynamic range extends to 100 MHz as an amplifier

Applications:

  • General-purpose amplification
  • Switching applications

Package:

  • TO-92-3 (CASE 135AN)
  • TO-92-3 LF (CASE 135AR)

2N3904 Absolute Maximum Ratings

(Values are at T A = 25 ° C unless otherwise noted.) (Note 1, Note 2)

SymbolParameterValueUnit
V CEOCollector - Emitter Voltage40V
V CBOCollector - Base Voltage60V
V EBOEmitter - Base Voltage6.0V
I CCollector Current - Continuous200mA
T J , T STGOperating and Storage Junction Temperature Range- 55 to +150° C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

  1. These ratings are based on a maximum junction temperature of 150 ° C.
  2. These are steady -state limits. onsemi should be consulted on applications involving pulsed orlow -duty cycle operations.

2N3904 Thermal Information

(Values are at T A = 25 ° C unless otherwise noted.)

TO -92 3 CASE 135AN

SymbolParameterMaxUnit
P DTotal Device Dissipation625mW
Derate Above 25 ° C5mW/ ° C
R q JCThermal Resistance, Junction to Case83.3° C/W
R q JAThermal Resistance, Junction to Ambient200° C/W

TO -92 3 CASE 135AN

TO -92 3 LEADFORMED CASE 135AR

Other Discrete Semiconductors

  • 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
  • 1N4148WS – onsemi, Fast Switching Diode
  • 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-13-F – Diodes Incorporated, Fast Switching Diode
  • 1N4148WSQ-7-F – Diodes Incorporated, Fast Switching Diode

All Discrete Semiconductors datasheetsAll onsemi datasheets (357)

Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.

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