2N3904
NPN General - Purpose AmplifierThe 2N3904 is a npn general - purpose amplifier from onsemi. View the full 2N3904 datasheet below including key specifications, absolute maximum ratings.
Official 2N3904 datasheet (PDF) — the source this page was extracted from.
2N3904 Key Specifications
| Parameter | Value |
|---|---|
| Collector Current (Max) | 200 mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) | 30 @ 100mA, 1V |
| Transition Frequency | 300MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Bulk |
| Power (Max) | 200 mW |
| Standard Pack Qty | 2500 |
| Supplier Device Package | SOT-23 |
| Transistor Type | NPN |
| Vce Saturation | 300mV @ 5mA, 50mA |
| Collector-Emitter Breakdown Voltage | 40 V |
2N3904 Overview
Part: 2N3904 from onsemi
Type: NPN General-Purpose Amplifier and Switch
Description: NPN general-purpose amplifier and switch designed for dynamic range up to 100 mA as a switch and up to 100 MHz as an amplifier, featuring a 40 V collector-emitter breakdown voltage and 200 mA continuous collector current.
Operating Conditions:
- Supply voltage: Not applicable (breakdown voltages are specified)
- Operating temperature: -55 to +150 °C (Junction and Storage)
- Max useful switching current: 100 mA
- Max useful amplifier frequency: 100 MHz
Absolute Maximum Ratings:
- Max Collector-Emitter Voltage (VCEO): 40 V
- Max Collector-Base Voltage (VCBO): 60 V
- Max Emitter-Base Voltage (VEBO): 6.0 V
- Max continuous current (IC): 200 mA
- Max junction/storage temperature: +150 °C
Key Specs:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 40 V (min, at IC = 1.0 mA, IB = 0)
- DC Current Gain (hFE): 100-300 (at IC = 10 mA, VCE = 1.0 V)
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.2 V (max, at IC = 10 mA, IB = 1.0 mA)
- Current-Gain-Bandwidth Product (fT): 300 MHz (min, at IC = 10 mA, VCE = 20 V, f = 100 MHz)
- Output Capacitance (Cobo): 4.0 pF (max, at VCB = 5.0 V, IE = 0, f = 100 kHz)
- Delay Time (td): 35 ns (max, at VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA)
- Storage Time (ts): 200 ns (max, at VCC = 3.0 V, IC = 10 mA, IB1 = IB2 = 1.0 mA)
- Noise Figure (NF): 5.0 dB (max, at IC = 100 mA, VCE = 5.0 V, RS = 1.0 kΩ, f = 10 Hz to 15.7 kHz)
Features:
- General-purpose amplifier
- General-purpose switch
- Useful dynamic range extends to 100 mA as a switch
- Useful dynamic range extends to 100 MHz as an amplifier
Applications:
- General-purpose amplification
- Switching applications
Package:
- TO-92-3 (CASE 135AN)
- TO-92-3 LF (CASE 135AR)
2N3904 Absolute Maximum Ratings
(Values are at T A = 25 ° C unless otherwise noted.) (Note 1, Note 2)
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V CEO | Collector - Emitter Voltage | 40 | V |
| V CBO | Collector - Base Voltage | 60 | V |
| V EBO | Emitter - Base Voltage | 6.0 | V |
| I C | Collector Current - Continuous | 200 | mA |
| T J , T STG | Operating and Storage Junction Temperature Range | - 55 to +150 | ° C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- These ratings are based on a maximum junction temperature of 150 ° C.
- These are steady -state limits. onsemi should be consulted on applications involving pulsed orlow -duty cycle operations.
2N3904 Thermal Information
(Values are at T A = 25 ° C unless otherwise noted.)
TO -92 3 CASE 135AN
| Symbol | Parameter | Max | Unit |
|---|---|---|---|
| P D | Total Device Dissipation | 625 | mW |
| Derate Above 25 ° C | 5 | mW/ ° C | |
| R q JC | Thermal Resistance, Junction to Case | 83.3 | ° C/W |
| R q JA | Thermal Resistance, Junction to Ambient | 200 | ° C/W |
TO -92 3 CASE 135AN
TO -92 3 LEADFORMED CASE 135AR
Other Discrete Semiconductors
- 1N4148W-13-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
- 1N4148W-7-F – Diodes Incorporated, Surface-Mount Fast Switching Diode
- 1N4148WS – onsemi, Fast Switching Diode
- 1N4148WS-13-F – Diodes Incorporated, Fast Switching Diode
- 1N4148WS-7-F – Diodes Incorporated, Fast Switching Diode
- 1N4148WSQ – Diodes Incorporated, Fast Switching Diode
- 1N4148WSQ-13-F – Diodes Incorporated, Fast Switching Diode
- 1N4148WSQ-7-F – Diodes Incorporated, Fast Switching Diode
All Discrete Semiconductors datasheetsAll onsemi datasheets (357)
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