1N5819
Schottky RectifierThe 1N5819 is a schottky rectifier from Diodes Incorporated. View the full 1N5819 datasheet below including key specifications, electrical characteristics, absolute maximum ratings.
Official 1N5819 datasheet (PDF) — the source this page was extracted from.
1N5819 Key Specifications
| Parameter | Value |
|---|---|
| Weight | 0.3 grams (approximate) |
| RMS Reverse Voltage | 28V |
| Forward Voltage (VFM) | 0.60V @ 1.0A; 0.90V @ 3.0A |
| Package Dimensions (DO-41) | Body length 4.06-5.21mm, body diameter 2.00-2.72mm, lead diameter 0.71-0.864mm, lead length min 25.40mm |
| Typical Total Capacitance (CT) | 110pF |
| Peak Reverse Leakage Current (IRM) | 1.0mA @ 25°C; 10mA @ 100°C |
| Average Rectified Output Current (IO) | 1.0A @ TL = +90°C |
| Peak Repetitive Reverse Voltage (VRRM) | 40V |
| Operating And Storage Temperature Range | -65°C to +125°C |
| Thermal Resistance Junction To Lead (RθJL) | 15°C/W |
| Thermal Resistance Junction To Ambient (RθJA) | 50°C/W |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 25A (8.3ms single half sine-wave) |
1N5819 Overview
Part: 1N5817, 1N5818, 1N5819 from Diodes Incorporated
Type: 1.0A Schottky Barrier Rectifier
Description: 1.0A Schottky Barrier Rectifier series featuring low forward voltage drop, high surge capability, and peak repetitive reverse voltages up to 40V, suitable for low-voltage, high-frequency applications.
Operating Conditions:
- Operating temperature: -65 to +125 °C
- Average Rectified Output Current: 1.0 A (@T_L = +90 °C)
- Peak Repetitive Reverse Voltage: Up to 40 V (for 1N5819)
Absolute Maximum Ratings:
- Max reverse voltage: 40 V (V_RRM for 1N5819)
- Max continuous current: 1.0 A (I_O @T_L = +90 °C)
- Max junction/storage temperature: +125 °C
Key Specs:
- Peak Repetitive Reverse Voltage (V_RRM): 20 V (1N5817), 30 V (1N5818), 40 V (1N5819)
- Average Rectified Output Current (I_O): 1.0 A (@T_L = +90 °C)
- Non-Repetitive Peak Forward Surge Current (I_FSM): 25 A (8.3ms Single Half Sine-Wave)
- Forward Voltage (V_FM): 0.450 V (1N5817 @I_F = 1.0A)
- Peak Reverse Leakage Current (I_RM): 1.0 mA (@T_A = +25 °C, at Rated DC Blocking Voltage)
- Typical Total Capacitance (C_T): 110 pF
- Typical Thermal Resistance Junction to Lead (R_θJL): 15 °C/W
- Operating and Storage Temperature Range (T_J, T_STG): -65 to +125 °C
Features:
- Guard Ring Die Construction for Transient Protection
- Low-Power Loss, High Efficiency
- High-Surge Capability
- High-Current Capability and Low-Forward Voltage Drop
- Lead-Free Finish; RoHS Compliant
Applications:
- Low-Voltage, High-Frequency Inverters
- Free Wheeling
- Polarity Protection Application
Package:
- DO-41 (Plastic)
1N5819 Features
- Guard Ring Die Construction for Transient Protection
- Low-Power Loss, High Efficiency
- High-Surge Capability
- High-Current Capability and Low-Forward Voltage Drop
- For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
1N5817 - 1N5819
1N5819 Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
| Characteristic | Characteristic | Symbol | 1N5817 | 1N5818 | 1N5819 | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | V RRM V RWM V R | 20 | 30 | 40 | V |
| RMS Reverse Voltage | RMS Reverse Voltage | V R(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current (Note 4)@T L = +90 ° C | Average Rectified Output Current (Note 4)@T L = +90 ° C | I O | 1.0 | 1.0 | 1.0 | A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | I FSM | 25 | 25 | 25 | A |
| Forward Voltage (Note 5) | @I F = 1.0A @I F = 3.0A | V FM | 0.450 0.750 | 0.550 0.875 | 0.60 0.90 | V |
| Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 5) | @T A = +25 ° C @T A = +100 ° C | I RM | 1.0 10 | 1.0 10 | 1.0 10 | mA |
| Typical Total Capacitance (Note 6) | Typical Total Capacitance (Note 6) | C T | 110 | 110 | 110 | pF |
| Typical Thermal Resistance Junction to Lead (Note 7) | Typical Thermal Resistance Junction to Lead (Note 7) | R ← JL | 15 | 15 | 15 | ° C/W |
| Typical Thermal Resistance Junction to Ambient | Typical Thermal Resistance Junction to Ambient | R ← JA | 50 | 50 | 50 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J , T STG | -65 to +125 | -65 to +125 | -65 to +125 | ° C |
1N5819 Absolute Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
| Characteristic | Characteristic | Symbol | 1N5817 | 1N5818 | 1N5819 | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | V RRM V RWM V R | 20 | 30 | 40 | V |
| RMS Reverse Voltage | RMS Reverse Voltage | V R(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current (Note 4)@T L = +90 ° C | Average Rectified Output Current (Note 4)@T L = +90 ° C | I O | 1.0 | 1.0 | 1.0 | A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | I FSM | 25 | 25 | 25 | A |
| Forward Voltage (Note 5) | @I F = 1.0A @I F = 3.0A | V FM | 0.450 0.750 | 0.550 0.875 | 0.60 0.90 | V |
| Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 5) | @T A = +25 ° C @T A = +100 ° C | I RM | 1.0 10 | 1.0 10 | 1.0 10 | mA |
| Typical Total Capacitance (Note 6) | Typical Total Capacitance (Note 6) | C T | 110 | 110 | 110 | pF |
| Typical Thermal Resistance Junction to Lead (Note 7) | Typical Thermal Resistance Junction to Lead (Note 7) | R ← JL | 15 | 15 | 15 | ° C/W |
| Typical Thermal Resistance Junction to Ambient | Typical Thermal Resistance Junction to Ambient | R ← JA | 50 | 50 | 50 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J , T STG | -65 to +125 | -65 to +125 | -65 to +125 | ° C |
1N5819 Package Information
- Package: DO-41
- Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD202, Method 208
- Polarity: Cathode Band
- Weight: 0.3 grams (Approximate)
Other Diodes
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- VMNN110CMS-TR – Stanley Electric, Infrared Emitting Diode
- ESD5Z2.5T1G – onsemi, ESD Protection TVS Diode
- PMEG4010CEJ – Nexperia, Schottky Barrier Rectifier
- BAT54S – Diotec Semiconductor, Dual Schottky Barrier Diode (Series)
Data on this page is extracted from publicly available manufacturer datasheets using automated tools including AI. It may contain errors or omissions. Always verify specifications against the official manufacturer datasheet before making design or purchasing decisions. See our Terms of Service. Rights holders can submit a takedown request.
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