1N5819
Schottky RectifierThe 1N5819 is a schottky rectifier from Diodes Incorporated. View the full 1N5819 datasheet below including electrical characteristics, absolute maximum ratings.
Manufacturer
Diodes Incorporated
Category
DiodesOverview
Part: 1N5817, 1N5818, 1N5819 from Diodes Incorporated
Type: 1.0A Schottky Barrier Rectifier
Description: 1.0A Schottky Barrier Rectifier series featuring low forward voltage drop, high surge capability, and peak repetitive reverse voltages up to 40V, suitable for low-voltage, high-frequency applications.
Operating Conditions:
- Operating temperature: -65 to +125 °C
- Average Rectified Output Current: 1.0 A (@T_L = +90 °C)
- Peak Repetitive Reverse Voltage: Up to 40 V (for 1N5819)
Absolute Maximum Ratings:
- Max reverse voltage: 40 V (V_RRM for 1N5819)
- Max continuous current: 1.0 A (I_O @T_L = +90 °C)
- Max junction/storage temperature: +125 °C
Key Specs:
- Peak Repetitive Reverse Voltage (V_RRM): 20 V (1N5817), 30 V (1N5818), 40 V (1N5819)
- Average Rectified Output Current (I_O): 1.0 A (@T_L = +90 °C)
- Non-Repetitive Peak Forward Surge Current (I_FSM): 25 A (8.3ms Single Half Sine-Wave)
- Forward Voltage (V_FM): 0.450 V (1N5817 @I_F = 1.0A)
- Peak Reverse Leakage Current (I_RM): 1.0 mA (@T_A = +25 °C, at Rated DC Blocking Voltage)
- Typical Total Capacitance (C_T): 110 pF
- Typical Thermal Resistance Junction to Lead (R_θJL): 15 °C/W
- Operating and Storage Temperature Range (T_J, T_STG): -65 to +125 °C
Features:
- Guard Ring Die Construction for Transient Protection
- Low-Power Loss, High Efficiency
- High-Surge Capability
- High-Current Capability and Low-Forward Voltage Drop
- Lead-Free Finish; RoHS Compliant
Applications:
- Low-Voltage, High-Frequency Inverters
- Free Wheeling
- Polarity Protection Application
Package:
- DO-41 (Plastic)
Features
- Guard Ring Die Construction for Transient Protection
- Low-Power Loss, High Efficiency
- High-Surge Capability
- High-Current Capability and Low-Forward Voltage Drop
- For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
1N5817 - 1N5819
Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
| Characteristic | Characteristic | Symbol | 1N5817 | 1N5818 | 1N5819 | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | V RRM V RWM V R | 20 | 30 | 40 | V |
| RMS Reverse Voltage | RMS Reverse Voltage | V R(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current (Note 4)@T L = +90 ° C | Average Rectified Output Current (Note 4)@T L = +90 ° C | I O | 1.0 | 1.0 | 1.0 | A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | I FSM | 25 | 25 | 25 | A |
| Forward Voltage (Note 5) | @I F = 1.0A @I F = 3.0A | V FM | 0.450 0.750 | 0.550 0.875 | 0.60 0.90 | V |
| Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 5) | @T A = +25 ° C @T A = +100 ° C | I RM | 1.0 10 | 1.0 10 | 1.0 10 | mA |
| Typical Total Capacitance (Note 6) | Typical Total Capacitance (Note 6) | C T | 110 | 110 | 110 | pF |
| Typical Thermal Resistance Junction to Lead (Note 7) | Typical Thermal Resistance Junction to Lead (Note 7) | R ← JL | 15 | 15 | 15 | ° C/W |
| Typical Thermal Resistance Junction to Ambient | Typical Thermal Resistance Junction to Ambient | R ← JA | 50 | 50 | 50 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J , T STG | -65 to +125 | -65 to +125 | -65 to +125 | ° C |
Absolute Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
| Characteristic | Characteristic | Symbol | 1N5817 | 1N5818 | 1N5819 | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | V RRM V RWM V R | 20 | 30 | 40 | V |
| RMS Reverse Voltage | RMS Reverse Voltage | V R(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current (Note 4)@T L = +90 ° C | Average Rectified Output Current (Note 4)@T L = +90 ° C | I O | 1.0 | 1.0 | 1.0 | A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load | I FSM | 25 | 25 | 25 | A |
| Forward Voltage (Note 5) | @I F = 1.0A @I F = 3.0A | V FM | 0.450 0.750 | 0.550 0.875 | 0.60 0.90 | V |
| Peak Reverse Leakage Current at Rated DC Blocking Voltage (Note 5) | @T A = +25 ° C @T A = +100 ° C | I RM | 1.0 10 | 1.0 10 | 1.0 10 | mA |
| Typical Total Capacitance (Note 6) | Typical Total Capacitance (Note 6) | C T | 110 | 110 | 110 | pF |
| Typical Thermal Resistance Junction to Lead (Note 7) | Typical Thermal Resistance Junction to Lead (Note 7) | R ← JL | 15 | 15 | 15 | ° C/W |
| Typical Thermal Resistance Junction to Ambient | Typical Thermal Resistance Junction to Ambient | R ← JA | 50 | 50 | 50 | ° C/W |
| Operating and Storage Temperature Range | Operating and Storage Temperature Range | T J , T STG | -65 to +125 | -65 to +125 | -65 to +125 | ° C |
Package Information
- Package: DO-41
- Package Material: Molded Plastic. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD202, Method 208
- Polarity: Cathode Band
- Weight: 0.3 grams (Approximate)
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